Page 1
2007. 4. 24 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTK920T
Revision No : 1
RF Switching for VCR Tuner
FEATURES
Low loss at on state(Typ 1dB@1GHz)
With built-in bias diode
FET Maximum Ratings (Ta=25 )
DIM MILLIMETERS
A
B
D
E
TSQ
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.16 0.05
0.00-0.10
0.25+0.3/-0.15
C
F
G
H
I
J
K
0.60
A
F
D
B
E
C
K
H
I
2
14
3
+
_
+
_
+
_
+
_
+
_
+ 0.1
_
0.55
+ 0.1
_
G
I
1. Diode Cathode
2. FET Gate & Diode Anode
3. FET Drain
4. FET Source
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
EQUIVALENT CIRCUIT
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source-Voltage
V
DS
3
V
Drain-Gate-Voltage
V
DG
7 V
Source-Gate-Voltage
V
SG
7 V
Drain Current
I
D
10 mA
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation
PC*
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage
V
R
35 V
Forword Current
I
F
100 mA
FET DIODE Maximum Ratings (Ta=25 )
DIODE Maximum Ratings (Ta=25 )
* Package mounted on a ceramic board (600 0.8 )
Marking
Lot No.
Type Name
MA
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2007. 4. 24 2/3
KTK920T
Revision No : 1
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Gate-Source Breakdown Voltage
V
(BR)GSS
VDS=0, IGS=-0.1mA
7 - - V
Gate-Source Pinch-off Voltage
V
GS(OFF)
VDS=1V, ID=20 A
- -3 -4 V
Drain-Source Leakage Current
I
DSX
VDS=2V, VGS=-5V
- - 10
A
Gate Cut-off Current
I
GSS
VDS=0, VGS=-5V
- - -100 nA
Drain-Source On-State Resistance
R
DS(ON)
VGS=0, ID=1mA
- 12 20
Loss(On-State)
S
21(ON)
2
VSC=VDC=0, RS=RL=50 , IF=0, f 1GHz
- - 2 dB
VSC=VDC=0, RS=RL=50 , IF=0, f=1GHz
- 1.3 - dB
VSC=VDC=0, RS=RL=75 , IF=0, f 1GHz
- - 3 dB
Isolation (Off-State)
S
21(OFF)
2
VSC=VDC=5V, RS=RL=50 , IF=1mA, f 1GHz
30 - - dB
VSC=VDC=5V, RS=RL=50 , IF=1mA, f= 1GHz
- 38 - dB
VSC=VDC=5V, RS=RL=75 , IF=1mA, f 1GHz
30 - - dB
Input Capacitance
Note1
C
ic
VSC=VDC=5V, IF=1mA, f=1MHz
- 1 - pF
VSC=VDC=0, IF=0, f=1MHz
- 0.65 - pF
Output Capacitance
Note1
C
oc
VSC=VDC=5V, IF=1mA, f=1MHz
- 1 - pF
VSC=VDC=0, IF=0, f=1MHz
- 0.65 - pF
DIODE ELECTRICAL CHARACTERISTICS (Ta=25 )
t
Fig. S
21(on)
2
S
21(off)
2
Test Circuit
Note : 1 Cicis the series connection of Csgand Cgc;
C
oc
is the series connection of Cdgand Cgc;
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Forward Voltage
V
F
IF=2mA
- - 0.85 V
Reverse Current
I
R
VR=15V
- - 0.1
Reverse Voltage
V
R
IR=1
35 - - V
Total Capacitance
C
T
VR=6V, f=1MHz
- 0.7 1.2 pF
Series Resistance
r
S
IF=2mA, f=100MHz
- 0.5 0.9
FET ELECTRICAL CHARACTERISTICS (Ta=25 )
50Ω
Input
On-State : V=0V
Off-State : V=5V
1nF
V
1nF
100kΩ
47kΩ
1nF
4.7kΩ
100kΩ
50Ω
Outpu
1nF
V
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2007. 4. 24 3/3
KTK920T
Revision No : 1
0 0
2
S
21(ON)
(dB)
-1
-2
-3
LOSS (ON-STATE)
-4
0800400
S
2
21(ON)
- f S
VSC=VDC=0V, RS=RL=50Ω
= 0mA
I
F
Measured in test circuit (fig.)
FREQUENCY f (MHz)
1200
S
2
21(OFF)
(dB)
ISOLATION (OFF-STATE)
VSC=VDC=5V, RS=RL=50Ω , IF = 1mA
Measured in test circuit (fig.)
-20
-40
-60
0800400 1200
2
21(OFF)
- f
FREQUENCY f (MHz)
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