Page 1
2007. 4. 24 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTK919S
Revision No : 1
RF Switching for VCR Tuner
FEATURES
Low loss at on state(Typ 1dB@1GHz)
With built-in bias diode
Maximum Ratings (Ta=25 )
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source-Voltage
V
DS
3
V
Drain-Gate-Voltage
V
DG
7 V
Source-Gate-Voltage
V
SG
7 V
Drain Current
I
D
10 mA
Power Dissipation
P
C
150 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55~150
CHARACTERISTIC SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Gate-Source Breakdown Voltage
V
(BR)GSS
VDS=0, IGS=-0.1mA
7 - - V
Gate-Source Pinch-off Voltage
V
GS(OFF)
VDS=1V, ID=20 A
- -3 -4 V
Drain-Source Leakage Current
I
DSX
VDS=2V, VGS=-5V
- - 10
A
Gate Cut-off Current
I
GSS
VDS=0, VGS=-5V
- - -100 nA
Drain-Source On-State Resistance
R
DS(ON)
VGS=0, ID=1mA
- 12 20
Loss(On-State)
S
21(ON)
2
VSG=VDG=0, RS=RL=50 , f 860MHz
- - 3 dB
VSG=VDG=0, RS=RL=75 , f 860MHz
- - 3.5 dB
Isolation (Off-State)
S
21(OFF)
2
VSG=VDG=5V, RS=RL=50 , f 860MHz
30 - - dB
VSG=VDG=5V, RS=RL=75 , f 860MHz
30 - - dB
Input Capacitance
C
ig
VSG=VDG=5V, f=1MHz
- 0.9 - pF
VSG=VDG=0, f=1MHz
- 1.5 - pF
Output Capacitance
C
og
VSG=VDG=5V, f=1MHz
- 0.9 - pF
VSG=VDG=0, f=1MHz
- 1.5 - pF
E
B
LL
DIM
MILLIMETERS
A
B
C
A
G
Marking
Type Name
2
H
1
PP
N
C
K
1. SOURCE
2. DRAIN
3. GATE
SOT-23
M 1
D
3
M
D
E
G
H
J
K
L
M
N
J
P
Lot No.
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
Page 2
2007. 4. 24 2/2
KTK919S
Revision No : 1
0 0
2
S
21(ON)
(dB)
-1
-2
-3
-4
LOSS (ON-STATE)
-5
10 10
VSG=VDG=0V
=50Ω
(1) R
S=RL
=75Ω
(2) R
S=RL
21(ON)
2
- f S
(2)
(1)
2
S
FREQUENCY f (MHz)
2
- f
S
21(OFF)
(dB)
2
VSG=VDG=5V
(1) R
=50Ω
S=RL
(2) R
=75Ω
S=RL
21(OFF)
-20
-40
3
10
-60
ISOLATION (OFF-STATE)
10 10
2
(2)
(1)
3
10
FREQUENCY f (MHz)
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