Page 1
2003. 7. 4 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTK5132V
Revision No : 0
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : Vth=0.5 1.5V.
High Speed.
Small Package.
Enhancement-Mode.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
EQUIVALENT CIRCUIT
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
I
GSS
VGS= 16V, VDS=0V
- -
1 A
Drain-Source Breakdown Voltage
V
(BR)DSS
ID=100 A, VGS=0V
30 - - V
Drain Cut-off Current
I
DSS
VDS=30V, VGS=0V
- - 1
A
Gate Threshold Voltage
V
th
VDS=3V, ID=0.1mA
0.5 - 1.5 V
Forward Transfer Admittance
|Yfs| VDS=3V, ID=10mA
25 - - mS
Drain-Source ON Resistance
R
DS(ON)
ID=10mA, VGS=2.5V
- 4 7
Input Capacitance
C
iss
VDS=3V, VGS=0V, f=1MHz
- 8.5 - pF
Reverse Transfer Capacitance
C
rss
VDS=3V, VGS=0V, f=1MHz
- 3.3 - pF
Output Capacitance
C
oss
VDS=3V, VGS=0V, f=1MHz
- 9.3 - pF
Switching Time
Turn-on Time
t
on
VDD=5V, ID=10mA, VGS=0 5V
- 50 - nS
Turn-off Time
t
off
- 180 - nS
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DS
30 V
Gate-Source Voltage
V
GSS
20
V
DC Drain Current
I
D
100 mA
Drain Power Dissipation
P
D
100 mW
Channel Temperature
T
ch
150
Storage Temperature Range
T
stg
-55 150
E
B
2
G
A
1
H
K
P
C
P
D
3
J
DIM MILLIMETERS
A
B
C
D
E
G
H
J
K 0.2 0.05
P
_
1.2 0.05
+
_
+
0.8 0.05
_
0.5 0.05
+
_
+
0.3 0.05
_
+
1.2 0.05
_
0.8 0.05
+
0.40
_
+
0.12 0.05
_
+
5
G
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
D
1. SOURCE
2. GATE
3. DRAIN
VSM
Marking
Type Name
S
K B
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2003. 7. 4 2/3
KTK5132V
Revision No : 0
I - V
DDS
100
D
DRAIN CURRENT I (mA)
2.5V
80
60
2.2V
2.0V
40
COMMON SOURCE
1.8V
20
0
0
4681012
2
DRAIN-SOURCE VOLTAGE V (V)
I - V
100
30
DR
10
3
1
0.3
0.1
0.03
0.01
DRAIN REVERSE CURRENT I (mA)
0
-0.4 -0.8 -1.2 -1.6
Ta=25 C
1.6V
1.4V
V =1.2V
GS
DS
DSDR
COMMON SOURCE
V =0
GS
Ta=25 C
D
G
S
I - V
DSD
(LOW VOLTAGE REGION)
1.0
2.5V
0.8
D
1.2V
1.15V
COMMON
SOURCE
Ta=25 C
0.6
1.1V
0.4
0.2
DRAIN CURRENT I (mA)
1.05V
1.0V
V =0.9V
GS
0
0
0.1
0.2 0.3 0.4 0.5 0.6
DRAIN-SOURCE VOLTAGE V (V)
I - V
100
30
10
D
COMMON SOURCE
GSD
V =3V
DS
DS
3
1
I
DR
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
0.1
DRAIN CURRENT I (mA)
0.03
0.01
0
1
2345
DRAIN-SOURCE VOTAGE V (V)
Y - I
fs D
300
COMMON SOURCE
V =3V
DS
Ta=25 C
100
50
fs
30
Y (mS)
10
5
FORWARD TRANSFER ADMITTANCE
1
3 5 10 30 50
DRAIN CURRENT I (mA)
DS
100
50
30
10
5
3
CAPACITANCE C (pF)
1
100
D
0.1 10.50.3 3
GATE-SOURCE VOTAGE V (V)
C - V
oss
C
C
iss
DS
COMMON SOURCE
V =0
GS
f=1MHz
Ta=25 C
DRAIN-SOURCE VOLTAGE V (V)
GS
DS
C
rss
20105
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2003. 7. 4 3/3
KTK5132V
Revision No : 0
V - I
2
COMMON SOURCE
1
V =2.5V
GS
Ta=25 C
0.5
0.3
0.1
DS(ON)
0.05
V (V)
0.03
0.01
DRAIN-SOURCE ON VOLTAGE
0.005
1310 100305
DRAIN CURRENT I (mA)
150
D
DS(ON) D
P - Ta
D
t - I
D
1K
500
300
t
on
t
r
t
100
50
5V
30
SWITCHING TIME t (ns)
50
D
0
10µs
10
I
D
V
IN
50Ω
V
DD
53010 5031 100
DRAIN CURRENT I (mA)
V
OUT
L
R
V =5V
DD
<
D.U. 1%
=
V :t , t < 5ns
rf
IN
(Z =50Ω)
OUT
COMMON SOURCE
Ta=25 C
D
off
t
f
100
50
DRAIN POWER DISSIPATION P (mW)
0
02040
60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
SWITCHING TIME TEST CIRCUIT
I
5V
0
10µs
V
IN
V
IN
50Ω
D
V
L
R
V
DD
V =5V
OUT
D.U. 1%
V :t , t < 5ns
COMMON SOURCE
Ta=25 C
DD
<
=
r
IN
f
(Z =50Ω)
OUT
V
V
OUT
IN
V
DD
V (ON)
DS
5V
0
t
10%
on
90%
10%
90%
t
r
t
f
t
off
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