Page 1
2003. 7. 4 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTK5131V
Revision No : 0
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : Vth=0.5 1.5V.
High Speed.
Small Package.
Enhancement-Mode.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DS
30 V
Gate-Source Voltage
V
GSS
20
V
DC Drain Current
I
D
50 mA
Drain Power Dissipation
P
D
100 mW
Channel Temperature
T
ch
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
I
GSS
VGS= 16V, VDS=0V
- -
1 A
Drain-Source Breakdown Voltage
V
(BR)DSS
ID=100 A, VGS=0V
30 - - V
Drain Cut-off Current
I
DSS
VDS=30V, VGS=0V
- - 1
A
Gate Threshold Voltage
V
th
VDS=3V, ID=0.1mA
0.5 - 1.5 V
Forward Transfer Admittance
|Yfs| VDS=3V, ID=10mA
20 - - mS
Drain-Source ON Resistance
R
DS(ON)
ID=10mA, VGS=2.5V
- 15 40
Input Capacitance
C
iss
VDS=3V, VGS=0V, f=1MHz
- 5.5 - pF
Reverse Transfer Capacitance
C
rss
VDS=3V, VGS=0V, f=1MHz
- 1.6 - pF
Output Capacitance
C
oss
VDS=3V, VGS=0V, f=1MHz
- 6.5 - pF
Switching
Time
Turn-on Time
t
on
VDD=3V, ID=10mA, VGS=0 2.5V
- 140 - nS
Turn-off Time
t
off
- 140 - nS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
EQUIVALENT CIRCUIT
E
B
2
G
A
1
H
K
P
C
P
D
3
J
DIM MILLIMETERS
A
B
C
D
E
G
H
J
K 0.2 0.05
P
_
1.2 0.05
+
_
+
0.8 0.05
_
0.5 0.05
+
_
+
0.3 0.05
_
+
1.2 0.05
_
0.8 0.05
+
0.40
_
+
0.12 0.05
_
+
5
G
D
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
1. SOURCE
2. GATE
3. DRAIN
VSM
Marking
Type Name
K A
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2003. 7. 4 2/3
KTK5131V
Revision No : 0
60
2.5
50
D
40
30
2.2
2.0
1.8
20
10
DRAIN CURRENT I (mA)
0
2
0
4681012
DRAIN-SOURCE VOLTAGE V (V)
50
30
DR
10
3
I - V
DDS
COMMON SOURCE
Ta=25 C
1.6
I - V
DSDR
1.4
V =1.2V
GS
DS
COMMON SOURCE
V =0
GS
Ta=25 C
(LOW VOLTAGE REGION)
1.2
2.5
1.0
D
0.8
1.2
0.6
0.4
0.2
DRAIN CURRENT I (mA)
0
0
0.2 0.3 0.4 0.5 0.6
0.1
DRAIN-SOURCE VOLTAGE V (V)
50
30
10
D
Ta=100 C
3
I - V
1.1
I - V
D
DSD
COMMON SOURCE
Ta=25 C
1.05
1.0
V =0.95V
GS
0.9
0.8
DS
GS
COMMON SOURCE
V =3V
GS
1
0.3
0.1
0.03
0.01
DRAIN REVERSE CURRENT I (mA)
0
-0.4 -0.8 -1.2 -1.6
DRAIN-SOURCE VOTAGE V (V)
Y - I
fs D
100
COMMON
SOURCE
50
V =3V
DS
Ta=25 C
30
fs
Y (mS)
10
5
3
FORWARD TRANSFER ADMITTANCE
1
3 5 10 30 50 100
DRAIN CURRENT I (mA)
D
G
I
DR
S
1
0.3
0.1
DRAIN CURRENT I (mA)
0.03
Ta=25 C
Ta=-25 C
0.01
1
GATE-SOURCE VOTAGE V (V)
2345
GS
C - V
DS
COMMON SOURCE
V =0
GS
f=1MHz
Ta=25 C
C
iss
oss
C
C
rss
DS
0
30
10
5
3
CAPACITANCE C (pF)
1
0.5
20100.3100m 0.5 1 3 5
D
DRAIN-SOURCE VOLTAGE V (V)
DS
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2003. 7. 4 3/3
KTK5131V
Revision No : 0
V - I
3k
COMMON SOURCE
V =2.5V
GS
Ta=25 C
1k
500
300
100
DS(ON)
V (mV)
50
30
DRAIN-SOURCE ON VOLTAGE
10
1 3 10 100
DRAIN CURRENT I (mA)
150
D
DS(ON) D
P - Ta
D
t - I
D
1K
500
t
300
t
100
t
50
2.5V
30
SWITCHING TIME t (ns)
10
305
50
D
off
t
f
on
r
I
D
V
IN
0
10µs
50Ω
V
DD
310.3
DRAIN CURRENT I (mA)
V =3V
OUT
DD
<
D.U. 1%
=
V :t , t < 5ns
rf
IN
(Z =50Ω)
OUT
COMMON SOURCE
Ta=25 C
V
L
R
10 30 100
D
100
50
DRAIN POWER DISSIPATION P (mW)
0
02040
60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
SWITCHING TIME TEST CIRCUIT
I
2.5V
V
IN
0
10µs
V
IN
50Ω
D
V
L
R
OUT
V =3V
DD
<
D.U. 1%
=
V :t , t < 5ns
r
IN
f
(Z =50Ω)
OUT
COMMON SOURCE
V
DD
Ta=25 C
V
IN
V
OUT
V (ON)
DS
V
2.5V
0
DD
t
10%
on
90%
10%
90%
t
r
t
f
t
off
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