Page 1
2003. 2. 25 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTK211
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
Revision No : 2
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
High Forward Transfer Admittance.
: |y
fs
| =9mS(Typ.)
Extremely Low Reverse Transfer Capacitance.
: C
rss
=0.1pF(Typ.)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Gate-Drain Voltage
V
GDO
-18 V
Gate Current
I
G
10 mA
Drain Power Dissipation
P
D
150 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
I
GSS
VGS=-0.5V, VDS=0
- - -10 nA
Gate-Drain Breakdown Voltage
V
(BR)GDO
IG=-100 A
-18 - - V
Drain Current
I
DSS
(Note) VGS=0, VDS=10V
1.0 - 15 mA
Gate-Source Cut-off Voltage
V
GS(OFF)
VDS=10V, ID=1 A
-0.4 - -4.0 V
Foward Transfer Admittance
|yfs| VDS=10V, VGS=0, f=1kHz
- 9 - mS
Reverse Transfer Capacitance
C
rss
VGD=-10V, f=1MHz
- 0.10 0.15 pF
Power Gain
G
PS
VDD=10V, f=100MHz (Fig.)
- 18 - dB
Noise Figure NF
VDD=10V, f=100MHz (Fig.)
- 2.5 3.5 dB
Note : I
DSS
Classification O:1.0 3.0, Y:2.5 6.0,
GR(G):5.0
10.0, BL(B):9.0 15.0
E
B
LL
DIM
A
B
C
A
G
2
H
1
PP
N
C
K
D
3
M
D
E
G
H
J
K
L
M
N
P7
J
MILLIMETERS
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
Marking
I Rank
DSS
Type Name
1. GATE
2. DRAIN
3. SOURCE
SOT-23
Lot No.
K
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2003. 2. 25 2/3
KTK211
Revision No : 2
Fig. 100MHz GPS, NF TEST CIRCUIT
GROUP
RS( )
KTK211 - O 0
KTK211 - Y
18 5%
KTK211 - GR
100 5%
KTK211 - BL
200 5%
KTK211 is measured at each group by changing RS.
RS
D
S
20pF
L2
V
R =50Ω
g
INPUT
10pF
20pF
G
0.005µF
L1
L1 : 0.8mmΦ Ag PLATED Cu WIRE , 3 TURNS , 10mm ID , 10mm LENGTH.
L1 : 0.8mmΦ Ag PLATED Cu WIRE , 3.5 TURNS , 10mm ID , 10mm LENGTH.
0.005µF
DD
10pF
OUTPUT
R =50Ω
L
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2003. 2. 25 3/3
KTK211
Revision No : 2
k
y , y - f
is os
50
30
10
b
5
3
os
1
is
y , y (mS)
0.5
is
b
os
g
is
0.3
INPUT,OUTPUT ADMITTANCE
0.1
10 30 100 300
FREQUENCY f (MHz)
y - V
10
b
is
5
3
is
1
g
0.5
is
0.3
INPUT ADMITTANCE y (mS)
0.1
4
6 8 10 12 14 16 18 20 22
I =5mA(I )
DS
2
I =5mA(I )
DS
2
y , y - f
rs
fs
30
10
g
rs
5
3
fs
b
fs
COMMON SOURCE
V =10V
fs
V =0
Ta=25 C
DS
GS
1
COMMON
SOURCE
V =10V
g
os
DS
V =0
GS
Ta=25 C
1k 3k 10k
0.5
0.3
ADMITTANCE y , y (mS)
FORWARD REVERSE TRANSFER
0.1
g
b
rs
rs
3001003010
1k 3k 5
FREQUENCY f (MHz)
0.5
DSS
DSis
COMMON
SOURCE
f=100MHz
Ta=25 C
10
b
5
os
3
os
y - V
I =5mA(I )
DS
2
1
DS
os
COMMON
DSS
0.5
SOURCE
f=100MHz
Ta=25 C
0.5
g
0.5
DSS
0.3
0.1
0.05
OUTPUT ADMITTANCE y (mS)
0.02
os
4
6 8 10 12 14 16 18 20 22
I =5mA(I )
DS
DSS
0.5
2
DRAIN-SOURCE VOLTAGE V (V)
y - V
fs
30
COMMON SOURCE
f=100MHz
Ta=25 C
10
5
3
fs
y (mS)
1
0.5
FORWARD TRANSFER ADMITTANCE
4
6 8 10 12 14 16
DRAIN-SOURCE VOLTAGE V (V)
DS
DS
(I )
(I )
DSS
I =5mA-b
DS
DS
DSS
DS
2
0.5
2
0.5
g I =5mA
fs
fs
DRAIN-SOURCE VOLTAGE V (V)
DS
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