Page 1
SEMICONDUCTOR
TECHNICAL DATA
HIGH FREQUENCY APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
ᴌLow Noise Figure.
: NF=2.5dB(Typ.) (f=100MHz).
ᴌHigh Forward Transfer Admittance.
:|y
|= 9mS(Typ.).
fs
ᴌExtremely Low Reverse Transfer Capacitance.
: C
=0.1pF(Typ.)
rss
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Gate-Drain Voltage
Gate-Current
Drain Power Dissipation
Junction Temperature
Storage Temperature Range
V
GDO
I
G
P
D
T
j
T
stg
-18 V
10 mA
400 mW
150
-55ᴕ150
ᴱ
ᴱ
KTK161
N CHANNEL JUNCTION FIELD
EFFECT TRANSISTOR
B
A
F
H
C
J
1
L
EE
2
3
N
M
K
1. DRAIN
2. SOURCE
3. GATE
G
D
TO-92M
O
DIM
MILLIMETERS
A
3.20 MAX
B
4.30 MAX
C
0.55 MAX
D
2.40 0.15
E
F
G
14.00 0.50
H
0.60 MAX
J
K
L
M
0.55 MAX
N
O 0.75
1.27
2.30
1.05
1.45
25
0.80
_
+
_
+
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
Gate-Drain Breakdown Voltage
Drain Current
Gate-Source Cut-off Voltage
Foward Transfer Admittance
Reverse Transfer Capacitance
Power Gain
Noise Figure NF
Note : I
Classification O:1.0ᴕ3.0, Y:2.5ᴕ6.0, GR:5.0ᴕ10.0, BL:9.0ᴕ15.0
DSS
I
GSS
V
(BR)GDO
I
(Note) VDS=10V, VGS=0V
DSS
V
GS(OFF)
|yfs| VDS=10V, VGS=0, f=1kHz
C
rss
G
ps
VGS=-0.5V, VDS=0
IG=-100ỌA
VDS=10V, ID=1ỌA
VGD=-10V, f=1MHz
VDD=10V, f=100MHz (Fig.)
VDD=10V, f=100MHz (Fig.)
- - -10 nA
-18 - - V
1.0 - 15.0 mA
-0.4 - -4.0 V
- 9.0 - mS
- 0.10 0.15 pF
- 18 - dB
- 2.5 3.5 dB
1995. 1. 24 1/3
Revision No : 0
Page 2
Fig. 100MHz GPS, NF TEST CIRCUIT
KTK161
INPUT
R =50Ω
g
10pF
20pF
L1 : 0.8mmΦ Ag PLATED Cu WIRE , 3 TURNS , 10mm ID , 10mm LENGTH.
L1 : 0.8mmΦ Ag PLATED Cu WIRE , 3.5 TURNS , 10mm ID , 10mm LENGTH.
KTK161 is measured at each group by changing RS.
L1
G
0.005µF
RS
V
10pF
0.005µF
DD
D
S
20pF
L2
OUTPUT
R =50Ω
L
Group
KTK161-O 0
KTK161-Y
KTK161-GR
KTK161-BL
RS(ή)
18ήᴦ5%
100ήᴦ5%
200ήᴦ5%
1995. 1. 24 2/3
Revision No : 0
Page 3
KTK161
k
y , y - f
is os
50
30
10
b
5
3
os
1
is
y , y (mS)
0.5
is
b
os
g
is
0.3
INPUT,OUTPUT ADMITTANCE
0.1
10 30 100 300
FREQUENCY f (MHz)
y - V
10
b
is
5
3
is
1
g
0.5
is
0.3
INPUT ADMITTANCE y (mS)
0.1
6 8 10 12 14 16 18 20 22
4
I =5mA(I )
DS
2
I =5mA(I )
DS
2
y , y - f
rs
fs
30
10
g
rs
5
3
fs
b
fs
COMMON SOURCE
V =10V
fs
V =0
Ta=25 C
DS
GS
1
COMMON
SOURCE
V =10V
g
os
DS
V =0
GS
Ta=25 C
1k 3k 10k
0.5
0.3
ADMITTANCE y , y (mS)
FORWARD REVERSE TRANSFER
0.1
g
b
rs
rs
3001003010
1k 3k 5
FREQUENCY f (MHz)
0.5
DSS
DSis
COMMON
SOURCE
f=100MHz
Ta=25 C
10
b
5
os
3
os
y - V
I =5mA(I )
DS
2
1
DS
os
COMMON
DSS
0.5
SOURCE
f=100MHz
Ta=25 C
0.5
g
0.5
DSS
0.3
0.1
0.05
OUTPUT ADMITTANCE y (mS)
0.02
os
4
6 8 10 12 14 16 18 20 22
I =5mA(I )
DS
DSS
0.5
2
DRAIN-SOURCE VOLTAGE V (V)
y - V
fs
30
COMMON SOURCE
f=100MHz
Ta=25 C
g I =5mA
10
5
3
fs
y (mS)
fs
1
0.5
FORWARD TRANSFER ADMITTANCE
6 8 10 12 14 16
4
DRAIN-SOURCE VOLTAGE V (V)
1995. 1. 24 3/3
Revision No : 0
DS
DS
(I )
DSS
(I )
DSS
I =5mA-b
DS
DS
2
0.5
2
0.5
DS
fs
DRAIN-SOURCE VOLTAGE V (V)
DS
Loading...