Page 1
2003. 9. 19 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTJ6164S
Revision No : 1
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
·2.5 Gate Drive.
·Low Threshold Voltage : Vth=-0.5～-1.5V.
·High Speed.
·Small Package.
·Enhancement-Mode.
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. SOURCE
2. GATE
3. DRAIN
ELECTRICAL CHARACTERISTICS (Ta=25℃)
P CHANNEL MOS FIELD
EFFECT TRANSISTOR
EQUIVALENT CIRCUIT
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DS
-60 V
Gate-Source Voltage
V
GSS
±20
V
DC Drain Current
DC
I
D
-200
mA
Pulse
I
DP
-800
Drain Power Dissipation
P
D
200 mW
Channel Temperature
T
ch
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
I
GSS
V
GS
=±16V, V
DS
=0V
--
±1 μA
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
=-100μA, V
GS
=0V
-60 - - V
Drain Cut-off Current
I
DSS
VDS=-60V, VGS=0V
---1
μA
Gate Threshold Voltage
V
th
VDS=-10V, ID=-1mA
-0.5 - -1.5 V
Forward Transfer Admittance
|Y
fs
|VDS=-10V, ID=-50mA
100 - - mS
Drain-Source ON Resistance
R
DS(ON)
ID=-50mA, VGS=-2.5V
- 1.5 2
Ω
Input Capacitance
C
iss
VDS=-10V, VGS=0V, f=1MHz
-5565pF
Reverse Transfer Capacitance
C
rss
VDS=-10V, VGS=0V, f=1MHz
-1318pF
Output Capacitance
C
oss
VDS=-10V, VGS=0V, f=1MHz
-4050pF
Switching Time
Turn-on Time
t
r
-8-
nS
Turn-on Time
t
on
-14-
Turn-on Time
t
f
-35-
Turn-on Time
t
off
-75-
D
Marking
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
Type Name
Lot No.
EL
Page 2
2003. 9. 19 2/3
KTJ6164S
Revision No : 1
Page 3
2003. 9. 19 3/3
KTJ6164S
Revision No : 1
Loading...