Page 1
2011. 7. 12
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTJ6131V
Revision No : 0
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
·2.5 Gate Drive.
·Low Threshold Voltage : Vth=-0.5～-1.5V.
·High Speed.
·Small Package.
·Enhancement-Mode.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
P CHANNEL MOS FIELD
EFFECT TRANSISTOR
EQUIVALENT CIRCUIT
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
I
GSS
V
GS
=±16V, V
DS
=0V
- -
±1 μA
Drain-Source Breakdown Voltage
V
(BR)DSS
I
D
=-100μA, V
GS
=0V
-30 - - V
Drain Cut-off Current
I
DSS
VDS=-30V, VGS=0V
- - -1
μA
Gate Threshold Voltage
V
th
VDS=-3V, ID=-0.1mA
-0.5 - -1.5 V
Forward Transfer Admittance
|Yfs| VDS=-3V, ID=-10mA
15 - - mS
Drain-Source ON Resistance
R
DS(ON)
ID=-10mA, VGS=-2.5V
- 20 40
Ω
Input Capacitance
C
iss
VDS=-3V, VGS=0V, f=1MHz
- 10.4 - pF
Reverse Transfer Capacitance
C
rss
VDS=-3V, VGS=0V, f=1MHz
- 2.8 - pF
Output Capacitance
C
oss
VDS=-3V, VGS=0V, f=1MHz
- 8.4 - pF
Switching Time
Turn-on Time
t
on
VDD=-3V, ID=-10mA, V
GS
=0～-2.5V
- 0.15 -
μS
Turn-off Time
t
off
- 0.13 -
μS
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DS
-30 V
Gate-Source Voltage
V
GSS
±20
V
DC Drain Current
I
D
-50 mA
Drain Power Dissipation
P
D
100 mW
Channel Temperature
T
ch
150
℃
Storage Temperature Range
T
stg
-55～150
℃
D
E
B
D
3
J
DIM MILLIMETERS
A
B
C
D
E
G
H
K 0.2 0.05
P
1. SOURCE
2. GATE
3. DRAIN
_
1.2 0.05
+
_
0.8 0.05
+
_
0.5 0.05
+
_
0.3 0.05
+
_
1.2 0.05
+
_
0.8 0.05
+
0.40
_
0.12 0.05
J
+
_
+
5
2
G
A
1
H
K
P
C
P
VSM
Marking
Type Name
M1
G
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
Page 2
2011. 7. 12 2/3
KTJ6131V
Revision No : 0
Page 3
2011. 7. 12 3/3
KTJ6131V
Revision No : 0
Loading...