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2003. 6. 23
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTJ6131E
Revision No : 0
ULTRA-HIGH SPEED SWITCHING APPLICATIONS
ANALOG SWITCH APPLICATIONS
FEATURES
2.5 Gate Drive.
Low Threshold Voltage : Vth=-0.5 -1.5V.
High Speed.
Small Package.
Enhancement-Mode.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
P CHANNEL MOS FIELD
EFFECT TRANSISTOR
EQUIVALENT CIRCUIT
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current
I
GSS
VGS= 16V, VDS=0V
- -
1 A
Drain-Source Breakdown Voltage
V
(BR)DSS
ID=-100 A, VGS=0V
-30 - - V
Drain Cut-off Current
I
DSS
VDS=-30V, VGS=0V
- - -1
A
Gate Threshold Voltage
V
th
VDS=-3V, ID=-0.1mA
-0.5 - -1.5 V
Forward Transfer Admittance
|Yfs| VDS=-3V, ID=-10mA
15 - - mS
Drain-Source ON Resistance
R
DS(ON)
ID=-10mA, VGS=-2.5V
- 20 40
Input Capacitance
C
iss
VDS=-3V, VGS=0V, f=1MHz
- 10.4 - pF
Reverse Transfer Capacitance
C
rss
VDS=-3V, VGS=0V, f=1MHz
- 2.8 - pF
Output Capacitance
C
oss
VDS=-3V, VGS=0V, f=1MHz
- 8.4 - pF
Switching Time
Turn-on Time
t
on
VDD=-3V, ID=-10mA, VGS=0 -2.5V
- 0.15 -
S
Turn-off Time
t
off
- 0.13 -
S
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage
V
DS
-30 V
Gate-Source Voltage
V
GSS
20
V
DC Drain Current
I
D
-50 mA
Drain Power Dissipation
P
D
100 mW
Channel Temperature
T
ch
150
Storage Temperature Range
T
stg
-55 150
E
B
2
G
A
H
1
3
DIM MILLIMETERS
A
D
B
C
D
E
G
H
J
_
+
1.60 0.10
_
+
0.85 0.10
_
+
0.70 0.10
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
0.50
_
+
0.13 0.05
G
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.
PLEASE HANDLE WITH CAUTION.
C
1. SOURCE
2. GATE
D
3. DRAIN
Marking
Type Name
S
J
ESM
E B
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2003. 6. 23 2/3
KTJ6131E
Revision No : 0
I - V
DDS
-50
-2.5V
-40
D
-30
-2.4V
-2.2V
-2.0V
-20
-10
DRAIN CURRENT I (mA)
0
0
DRAIN-SOURCE VOLTAGE V (V)
I - V
DR
-50
-30
DR
-10
-3
-1
-0.3
-0.1
-0.03
-0.01
DRAIN REVERSE CURRENT I (mA)
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
COMMON SOURCE
Ta=25 C
-1.8V
-1.6V
-1.4V
V =-1.2V
GS
DS
DS
COMMON SOURCE
V =0
GS
D
G
S
I - V
DSD
(LOW VOLTAGE REGION)
-1.0
-2.5V
-0.8
D
-0.6
-0.4
-0.2
DRAIN CURRENT I (mA)
0
-10-2 -4 -6 -8
0
-50
-30
-10
D
-3
Ta=100 C
-1
I
DR
-0.3
-1.3V
GATE-SOURCE VOLTAGE V (V)
I - V
Ta=25 C
Ta=-25 C
COMMON SOURCE
Ta=25 C
DGS
COMMON SOURCE
V =-3V
DS
V =-0.9V
GS
DS
-1.2V
-1.15V
-1.1V
-1.05V
-1.0V
-0.5-0.1 -0.2 -0.3 -0.4
-0.1
DRAIN CURRENT I (mA)
-0.03
-0.01
0
-1 -2 -3 -4 -5
DRAIN-SOURCE VOTAGE V (V)
Y - I
fs D
100
COMMON SOURCE
V =-3V
DS
Ta=25 C
50
30
fs
Y (mS)
10
5
FORWARD TRANSFER ADMITTANCE
-1 -3 -5 -10 -30 -50 -100
DRAIN CURRENT I (mA)
DS
GATE-SOURCE VOTAGE V (V)
C - V
GS
DS
50
30
C
10
iss
C
oss
5
3
CAPACITANCE C (pF)
COMMON SOURCE
V =0
GS
1
f=1MHz
Ta=25 C
0.5
C
rss
-0.1 -0.3 -0.5 -1 -3 -5 -10 -20
D
DRAIN-SOURCE VOLTAGE V (V)
DS
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2003. 6. 23 3/3
KTJ6131E
Revision No : 0
V - I
-3K
COMMON SOURCE
V =-2.5V
GS
Ta=25 C
-1K
-500
-300
-100
DS(ON)
V (mV)
-50
-30
DRAIN-SOURCE ON VOLTAGE
-10
-1 -3 -10 -100
DRAIN CURRENT I (mA)
350
300
D
DS(ON) D
P - Ta
D
t - I
D
1K
500
300
t
100
50
30
SWITCHING TIME t (ns)
-2.5V
10
-30-5
-50
D
on
t
r
0
10µs
V
IN
V
L
R
50Ω
V
DD
-3-1-0.3
DRAIN CURRENT I (mA)
OUT
V =-3V
D.U. 1%
V :t , t < 5ns
COMMON SOURCE
Ta=25 C
D
DD
IN
(Z =50Ω)
-10 -30 -50
<
=
rf
OUT
t
off
t
f
250
200
150
100
50
DRAIN POWER DISSIPATION P (mW)
0
02040
60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
SWITCHING TIME TEST CIRCUIT
0
V
-2.5V
10µs
V
IN
IN
50Ω
V
OUT
V =-3V
DD
<
D.U. 1%
=
V :t , t < 5ns
r
IN
L
R
f
(Z =50Ω)
OUT
COMMON SOURCE
V
DD
Ta=25 C
V
V
IN
V (ON)
DS
OUT
V
0
10%
-2.5V
DD
90%
90%
10%
t
r
t
on
t
f
t
off
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