Page 1
2004. 11. 22 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD2686
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
DARLINGTON TRANSISTOR.
SOLENOID DRIVER. MOTOR DRIVER.
FEATURES
High DC Current Gain
: h
FE
=2000(Min.) (VCE=2V, IC=1A)
MAXIMUM RATINGS (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=45V, IE=0
- - 10
A
I
CEO
VCE=45V, IB=0
- - 10
A
Emitter Cut-off Current
I
EBO
VEB=8V, IC=0
0.8 - 4 mA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=10mA, IB=0
50 60 70 V
DC Current Gain
h
FE
VCE=2V, IC=1A
2000 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
1 IC=0.5A, IB=1mA
- - 1.2
V
V
CE(sat)
2 IC=1A, IB=1mA
- - 1.5
Base-Emitter Saturation Voltage
V
BE(sat)
IC=1A, IB=1mA
- - 2.0 V
Switching
Time
Turn On Time
t
on
- 0.4 -
S
Storage Time
t
stg
- 4.0 -
Fall Time
t
f
- 0.6 -
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
60 10
V
Emitter-Base Voltage
V
EBO
8 V
Collector Current
DC
I
C
1
A
Pulse
I
CP
3
Base Current
I
B
0.5 A
Collector Power
Dissipation
t=10S
P
C
*
2.5
W
DC 1
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Pc : Package mounted on FR4 board (Cu area : 645 , glass epoxy, t=1.6 )
EQUIVALENT CIRCUIT
Marking
Lot No.
A
H
D
FF
123
C
J
B
E
D
K
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
COLLECTOR
G
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
_
+
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
1.50 0.10
+
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
Type Name
A 2
20µs
5V
0V
<
=
INPUT
1%DUTY CYCLE
BASE
V =30V
CC
30Ω
∼
−
5kΩ
∼
−
300Ω
OUTPUT
EMITTER
Page 2
2004. 11. 22 2/2
KTD2686
Revision No : 1
I - V
3.2
C
2.4
1.6
0.8
COLLECTOR CURRENT I (A)
0
0
COLLECTOR EMITTER VOLTAGE V (V)
1
3
0.5
I =0.18mA
B
268
h - I
10000
COMMON
EMITTER
5000
V =2V
FE
DC CURRENT GAIN h
CE
3000
1000
500
300
100
0.03
0.05 0.1 0.3 0.5
Ta=100 C
Ta=25 C
Ta=-55 C
COLLECTOR CURRENT I (A)
CCE
0.3
0.22
0.20
4
FE C
1
COMMON
EMITTER
Ta=25 C
CE
3
C
I - V
CBE
3.2
C
2.4
COMMON
EMITTER
V =2V
CE
1.6
0.8
Ta=100 C
Ta=25 C
Ta=-55 C
COLLECTOR CURRENT I (A)
0
0
0.8 2.4 3.2
BASE EMITTER VOLTAGE V (V)
10
5
1.6
V - I
CE(sat)
BE
C
COMMON
EMITTER
I /I =500
CB
3
CE(sat)
1
VOLTAGE V (V)
0.5
0.3
5
10
COLLECTOR EMITTER SATURATION
0.1
Ta=-55 C
Ta=25 C
Ta=100 C
0.50.3 1 3
COLLECTOR CURRENT I (A)
510
C
SAFE OPERATING AREA
V - I
BE(sat)
10
5
3
Ta=25 C
Ta=55 C
Ta=100 C
0.50.3 1 3
BE(sat)
1
VOLTAGE V (V)
0.5
0.3
COLLECTOR EMITTER SATURATION
0.1
COLLECTOR CURRENT I (A)
C
COMMON
EMITTER
I /I =500
CB
510
C
10
I MAX(Pulse)
C
C
I MAX(Continuous)
C
1
(* SINGLE NONREPETITIVE
PULSE Ta=25 C )
0.1
CURVES MUST BE DERATED
COLLECTOR CURRENT I (A)
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON FR4 BOARD
(Cu area : 645 mm , glass epoxy, t=1.6mm)
0.01
0.1
2
110
COLLECTOR EMITTER VOLTAGE V (V)
*10ms
DC Operation
*1
ms
100
CE
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