Page 1
1
Base
3
Emitter
2
A
E
C
DB
KH
F G
L
J
1
2
3
4
B
C
E
Millimeter
Millimeter
Min. Max. Min. Max.
A 4.40
4.60 G
0.40 0.58
B 3.94 4.25 H 1.50
TYP
C 1.40 1.60 J 3.00
TYP
Elektronische Bauelemente
FEATURES
Small Flat Package
General Purpose Application
CLASSIFICATION OF h
Product-Rank KTD1898-O KTD1898-Y KTD1898-GR
Range 70~140 120~240 200~400
FE(1)
KTD1898
1A , 100V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-89
Marking
ZO ZY ZG
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-89 1K 7 inch
Collector
REF.
D 2.25 2.60 K 0.32 0.52
E 1.50 1.85 L 0.35 0.44
F 0.89 1.20
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Ratings Unit
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Collector Current-Continuous IC 1 A
Collector Power Dissipation PC 500 mW
Maximum Junction to Ambient R
Junction & Storage Temperature TJ, T
(TA=25°C unless otherwise specified)
100 V
CBO
80 V
CEO
5 V
EBO
250 °C / W
θJA
150, -55~150 °C
STG
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified)
REF.
Parameter Symbol Min. Typ. Max. Unit
Collector-Base Breakdown Voltage V
Collector-Emitter Breakdown Voltage V
Emitter-Base Breakdown Voltage V
Collector Cut-Off Current I
Emitter Cut-Off Current I
DC Current Gain hFE 70 - 400 VCE=3V, IC= 500mA
Collector-Emitter Saturation voltage V
Transition Frequency fT - 100 - MHz VCE=10V,IC=50mA,f=100MHz
Collector Output Capacitance COB - 20 - pF VCB=10V, IE=0, f=1MHz
100 - - V IC=0.1mA, IE=0
(BR)CBO
80 - - V IC=1mA, IB=0
(BR)CEO
5 - - V IE=0.1mA, IC=0
(BR)EBO
CBO
- - 0.1 µA VEB=4V, IC=0
EBO
- - 0.4 V IC=500mA, IB=20mA
CE(sat)
-
- 0.1 µA VCB=80V, IE=0
Test conditions
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
10-Nov-2011 Rev. A Page 1 of 1
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