Page 1
KTD1898
Epitaxial Planar NPN Transistors
ABSOLUTE MAXIMUM RATINGS
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
(Ta=25 )
C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Limits
100
80
5
1
2
0.5
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
Unit
Vdc
Vdc
Vdc
A(DC)
A (Pulse)*
W
Junction Temperature,
* Single pulse Pw = 20ms
Storage Temperature
ELECTRICAL CHARACTERISTICS
Parameter
Collector-Base Breakdown Voltage(Ic=100uA)
Collector-Emitter Breakdown Voltage(Ic=1mA)
Emitter-Base Breakdown Voltage(I =100uA)
Collector Cutoff Current(V =80V)
Emitter Cutoff Current(V =4V)
CB
EB
E
T ,
Tstg
j
(Ta=25 unless otherwise noted )
%
C
Symbol
BV
BV
BV
I
CBO
I
EBO
CBO
CEO
EBO
150,
-55 to +150
Min
100
80
5
-
-
Typ
-
-
-
-
-
Max
-
-
-
1
1
C
Unit
V
V
V
uA
uA
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Page 2
KTD1898
%
ELECTRICAL CHARACTERISTICS
(Ta=25 unless otherwise noted )
C
Parameter
DC Current Gain (V =3V, Ic=500mA)
Collector-Emitter Saturation Voltage (Ic=500mA, I =20mA)
Transition Frequency (V =10V, Ic=50mA, f=100MHz)
Output Capacitance (V =10V, I =0A, f=1MHz)
CLASSIFICATION OF h
Marking
Rank
Range
CE
B
CE
CB E
FE
ZO
O
70-140
ELECTRICAL CHARACTERISTIC CURVES
(Countinued)
Typ
Symbol
h
FE
V
CE(sat)
f
T
Cob
ZY
Y
120-240
Min
70
-
-
-
-
-
100
20
ZG
GR
200-400
Max
400
0.4
-
-
Unit
-
V
MHz
pF
1000
(mA)
100
C
10
1
C OLLE CTOR C UR R E NT : I
0.1
0 0.2 0.4 0.6 0.8 1.0 1. 2 1.4 1.6 1.8 2. 0
B AS E T O E MIT TE R V OL T AG E : V
FIG.1 Grounded Emitter Propagation
Characteristics
Ta=25°C
V
C E
=5V
BE
(V )
1.0
A)
(
C
0.8
0.6
0.4
0.2
C OLLE CTOR C UR R E NT : I
0
C OLLE C TO R TO EMIT TE R VO LT AG E : V
2408106
Ta=25°C
6mA
5mA
4mA
3mA
2mA
1mA
IB=0mA
C E
(
V)
FIG.2 Grounded Emitter Output
Characteristics
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Page 3
KTD1898
FE
100 0
100
DC C UR R E NT G AIN : h
Ta=25 °C
VCE=3V
1V
V)
(
C E( sat)
2.0
1.0
0.5
0.2
0.1
0.05
IC/IB=20/1
10/1
Ta=25 °C
0
C OLLE C TO R C UR R ENT : IC (
1000 10 100 0
mA)
FIG.3 DC Current Gain vs.
Collector Current
Ta=25°C
E
(mA)
VCE=5V
500
(MH z)
200
T
100
50
20
10
5
2
TR ANS ITIO N FR E QU ENC Y : f
1 2 5 10 2 0 50 100 20 0 50 0 100 0
E MIT TE R C UR R E NT : −I
FIG.5 Gain Bandwidth Product vs.
Emitter Current
10
5
Ic Max (P ulse)
2
A)
(
C
500 m
200 m
100 m
C OLLE C TO R C UR R E NT : I
D
1
50m
20m
10m
5m
2m
1m
0. 1 0. 2 0. 5 1 2 5 10 20 50 100 50 0200 1000
C OLLE C TO R TO E MIT TE R V OL TAGE : VCE (
0.02
0.01
C OLLE C TOR S AT UR ATIO N V OLTAG E : V
C OLLE C TO R C UR R ENT : IC (
FIG.4 Collector-Emitter Ssaturation
100 0
pF)
pF)
C OLLE C TO R OUT PUT C AP AC IT ANC E : C ob (
E MIT TE R IN P UT C AP AC ITANC E : C ib (
Voltage vs. Collector Current
100
10
1
0.1 0. 2 0.5 1 2 5 10 20 50 10 0
C OLLE C TO R TO B AS E VOL TAGE : VCB (
E MIT TE R TO BAS E V OL TAGE : V
1000 10 100 0
mA)
Ta=25 °C
f=1MH z
E
=0A
I
Ic=0 A
E B
(
V)
V)
FIG.6 Collector Output Capacitance vs.
Collector-Base Voltage
Emitter Input Capacitance vs.
T a=25°C
S ingle
=1
0
m
non-repe titive
pulse
S
C
P w
P
w
=
1
0
0
m
S
Emitter-Base Voltage
V)
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FIG.7 Safe Operating Area
Page 4
KTD1898
SOT-89 Outline Dimensions
E
G
J
K
C
L
H
B
unit:mm
SOT-89
Dim
A
A
B
C
D
E
G
H
D
J
K
L
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.500TYP
2.900
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
3.100
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