Page 1
2001. 10. 23 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTD1854T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
DRIVER APPLICATIONS.
FEATURES
AF amplifier, solenoid drivers, LED drivers.
Darlington connection.
High DC current gain.
Very small-sized package permitting sets to be made
smaller and slimer.
Complementary to KTB1234T.
MAXIMUM RATINGS (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=60V, IE=0
- - 100 nA
Emitter Cut-off Current
I
EBO
VEB=8V, IC=0
- - 100 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
80 V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=1mA, IB=0
50 V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IC=10 A, IC=0
10 V
DC Current Gain
h
FE
1 VCE=2V, IC=10mA
5000 - -
h
FE
2 VCE=2V, IC=100mA
4000 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=100mA, IB=100 A
- 0.9 1.5 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=100mA, IB=100 A
- 1.5 2.0 V
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
80 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
10 V
Collector Current
DC
I
C
200
mA
Pulse
I
CP
400
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
R
EQUIVALENT CIRCUIT
* Package mounted on a ceramic board (600 0.8 )
E
B
A
F
C
K
G
G
L
J
1. EMITTER
2. BASE
3. COLLECTOR
2
1
3
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
0.4 0.1
+
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
TSM
Marking
BASE
COLLECTO
EMITTER
Type Name
L Y
Lot No.
Page 2
2001. 10. 23 2/2
KTD1854T
Revision No : 0
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