Page 1
SEMICONDUCTOR
KTD1824E
TECHNICAL DATA
FOR LOW-FREQUENCY AMPLIFICATION.
FEATURES
ᴌHigh foward current transfer ratio h
ᴌLow collector to emitter saturation voltage V
ᴌHigh emitter to base voltage V
ᴌLow noise voltage NV.
ᴌESM type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
MAXIMUM RATINGS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
EBO
.
FE
.
CE(sat)
.
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
50 V
40 V
15 V
50
mA
100
100 mW
150
-55ᴕ150
ᴱ
ᴱ
EPITAXIAL PLANAR NPN TRANSISTOR
E
G
A
C
2
H
1
1. EMITTER
2. BASE
3. COLLECTOR
B
D
3
J
DIM
A
B
C
D
E
G
H
J
MILLIMETERS
_
+
1.60 0.10
_
+
0.85 0.10
_
+
0.70 0.10
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
0.50
_
+
0.13 0.05
ESM
Marking
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
I
Collector Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
CBO
I
CEO
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
(Note) VCE=10V, IC=2mA
FE
V
CE(sat)
f
T
Note : hFEClassification A:400~800, B:600~1200, C:1000~2000
VCB=20V, IE=0
VCE=20V, IB=0
IC=10ỌA, IE=0
IC=1mA, IB=0
IE=10ỌA, IC=0
IC=10mA, IB=1mA
VCB=10V, IE=-2mA, f=200MHz
h Rank
L
FE
- - 100 nA
- - 1
50 V
40 V
15 V
400 1000 2000
- 0.05 0.2 V
- 120 - MHz
ỌA
2001. 10. 23 1/3
Revision No : 0
Page 2
KTD1824E
I - V
C
120
Ta=25 C
100
C
80
60
40
20
COLLECTOR CURRENT I (mA)
0
0
246810
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
1
I /I =10
C B
0.5
0.3
CE(sat)
0.1
75 C
=
a
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.1 0.3
T
C
Ta=25
1 3 10 30 100
COLLECTOR CURRENT I (mA)
CE
Ta=
100µA
90µA
80µA
70µA
60µA
50µA
40µA
30µA
20µA
I =10µA
B
1200
V =10V
CE
FE
900
600
300
DC CURRENT GAIN h
h - I
FE
Ta
Ta
Ta=-25 C
C
=75 C
=25 C
0
0.1 0.3 1 3 10 30 100
-25
CE
100
80
C
60
C
40
COLLECTOR CURRENT I (mA)
V =10V
CE
I - V
C
BE
Ta=75 C
C
25
Ta=
C
-25 C
Ta=
20
COLLECTOR CURRENT I (mA)
0
0
C
BASE-EMITTER VOLTAGE V (V)
0.4 0.8 1.20.2 0.6 1.0
BE
C - V
ob
f - I
TE
250
V =10V
CB
Ta=25 C
200
T
150
100
50
8
7
6
5
4
ob
C (pF)
3
2
CB
I =0
E
f=1MHz
Ta=25 C
1
0
TRANSITION FREQUENCY f (MHz)
-0.1 -0.3
2001. 10. 23 2/3
-1 -3 -10 -30 -100
EMITTER CURRENT I (mA)
E
Revision No : 0
0
COLLECTOR OUTPUT CAPACITANCE
10 3031
COLLECTOR-BASE VOLTAGE V (V)
100
CB
Page 3
125
100
125
C
P (mW)
50
25
KTD1824E
Pc - Ta
COLLECTOR POWER DISSIPATION
0
0
25 50 100 125 150
AMBIENT TEMPERATURE Ta ( C)
75
2001. 10. 23 3/3
Revision No : 0
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