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2011. 3. 18 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1047B
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 0
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
·Complementary to KTB817B.
·
Recommended for 60W Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note : h
FE
(1) Classification O:60～120, Y:100～200
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
160 V
Collector-Emitter Voltage
V
CEO
140 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
DC
I
C
12
A
Pulse
I
CP
15
Collector Power Dissipation (Tc=25℃)
P
C
100 W
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=80V, IE=0
- - 0.1 mA
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1 mA
DC Current Gain
h
FE
(1) (Note) VCE=5V, IC=1A
60 - 200
h
FE
2 VCE=5V, IC=6A
20 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=5A, IB=0.5A
- - 2.5 V
Base-Emitter Voltage
V
BE(ON)
VCE=5V, IC=1A
- - 1.5 V
Transition Frequency
f
T
VCE=5V, IC=1A
- 15 - MHz
Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 210 - pF
Turn On Time
t
on
VCC=20V
I
C
=1A=10·IB1=-10·I
B2
R
L
=20Ω
- 0.26 -
μS
Fall Time
t
f
- 0.68 -
Storage Time
t
stg
- 6.88 -
A
N
O
H
D
E
d
PP
1
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
Q
F
I
G
2
3
B
K
MILLIMETERS
DIM
A
B
J
C
R
L
C
D
d
E
F
G
H
I
J
M
K
L
M
N
T
O
P
Q
R
T
_
+
15.60 0.20
_
+
4.80 0.20
_
+
19.90 0.20
_
2.00 0.20
+
_
+
1.00 0.20
_
+
3.00 0.20
_
+
3.80 0.20
_
+
3.50 0.20
_
13.90 0.20
+
_
12.76 0.20
+
_
23.40 0.20
+
1.5+0.15-0.05
_
+
16.50 0.30
_
+
1.40 0.20
_
13.60 0.20
+
_
+
9.60 0.20
_
+
5.45 0.30
_
3.20 0.10
+
_
+
18.70 0.20
0.60+0.15-0.05
TO-3P(N)-E
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2011. 3. 18 2/3
KTD1047B
Revision No : 0
I - V
CCE
10
8
C
6
240mA
200mA
160mA
120mA
80mA
4
2
COLLECTOR CURRENT I (A)
0
0
10 20 30 40 50
COLLECTOR EMITTER VOLTAGE V (V)
V - I
CE(sat)
10
5
3
1
0.5
0.3
CE(sat)
V (V)
0.1
0.05
0.03
COLLECTOR-EMITTER VOLTAGE
0.01
0.1
0.3 1
0.5
COLLECTOR CURRENT I (A)
40mA
C
35 10
C
20mA
I =0
B
CE
I /I =10
C
B
1k
500
300
FE
100
50
30
10
DC CURRENT h
5
3
1
COLLECTOR CURRENT I (A)
V - I
BE(sat)
10
5
3
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
0.1 0.3 31
0.5 5
COLLECTOR CURRENT I (A)
h - I
FE
310.30.1
C
V =5V
CE
10 30 100
C
C
I /I =10
C
B
C
10
f - I
T
I - V
C
BE
8
V =5V
CE
7
C
6
100
50
T
30
C
V =5V
CE
5
4
3
2
1
COLLECTOR CURRENT I (A)
0
0
0.4 0.8 1.2 1.6
BASE-EMITTER VOLTAGE V (V)
BE
10
5
3
1
TRANSITION FREQUENCY f (MHz)
130.30.1
0.5 5
COLLECTOR CURRENT I (A)
10
C
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2011. 3. 18 3/3
KTD1047B
Revision No : 0
k
C - V
ob CB
1k
500
300
100
ob
C (pF)
50
30
COLLECTOR OUTPUT CAPACITANCE
10
1
3 30 100
COLLECTOR-BASE VOLTAGE V (V)
10
f=1MHz
CB
SAFE OPERATING AREA
100
50
30
C
10
5
3
1
0.5
0.3
COLLECTOR CURRENT I (A)
0.1
COLLECTOR-EMITTER VOLTAGE V (V)
DC
100mS
301031
1mS
10mS
100 300 1
CE
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