Page 1
2003. 3. 25 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC9016S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
FEATURES
Small Reverse Transfer Capacitance
: C
re
=0.65pF(Typ.).
Low Noise Figure :NF=2.2dB(Typ.) at f=100MHz.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note) h
FE
Classification F:54 80, G:72 108, H:97 146, I:130 198
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=40V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
A
DC Current Gain
h
FE
(Note) VCE=5V, IC=1mA
54 - 198
Reverse Transfer Capacitance
C
re
VCE=6V, f=1MHz, IE=0
- - 1.0 pF
Transition Frequency
f
T
VCE=6V, IC=1mA, f=200MHz
260 - - MHz
Collector-Base Time Constant
CCrbb'
VCE=6V, IE=-1mA, f=30MHz
- - 30 pS
Noise Figure NF
VCE=6V, IE=-1mA, f=100MHz
- 2.2 4.0 dB
Power Gain
G
pe
15 - - dB
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
4 V
Collector Current
I
C
20 mA
Emitter Current
I
E
-20 mA
Collector Power Dissipation
PC *
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* PC: Package Mounted On 99.5% Alumina (10 8 0.6 )
E
B
LL
DIM MILLIMETERS
A
B
C
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
G
A
_
2.93 0.20
+
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
h Rank
FE
Type Name
BF
Lot No.
Page 2
2003. 3. 25 2/3
KTC9016S
Revision No : 1
STATIC CHARACTERISTICS
20
16
12
C
I (mA)VOLTAGE V (V)
COLLECTOR CURRENT
V =6V
CE
8
4
0
500
450
400
350
300
250
200
150
100
I =50µA
B
0
300
COMMON EMITTER
V =6V
FE
CE
Ta=25 C
100
50
30
DC CURRENT GAIN h
h - I
FE C
0.2
BE
0.4
0.6
BASE-EMITTER
0.8
BASE CURRENT
V =6V
CE
200 0 10 20 4030
400600
COLLECTOR-EMITTER
I ( µA)
B
COMMON
EMITTER
Ta=25 C
VOLTAGE V (V)
CE
10
0.1 0.3 0.5 3 101520
COLLECTOR CURRENT I (mA)
-100
fe
-50
-30
-10
PHASE ANGLE OF FORWARD
TRANSFER ADMITTANCE θ ( )
-5
100
50
Ω
30
fe
y (m )
10
FORWARD TRANSFER ADMITANCE
5
-0.2
C
y , θ - I
y
θ
fe
Efe fe
fe
COMMON
EMITTER
V =6V
CE
f=100MHz
Ta=25 C
-0.5 -1 -5-3 -10
EMITTER CURRENT I (mA)
E
C , g - I
oe oe
30
oe
10
5
3
300
Ω
oe
COMMON EMITTER
V =6V
f=100MHz
Ta=25 C
100
CE
50
30
E
30
Ω
g
oe
ie
ie
10
5
C , g - I
g
3
C
1
OUPUT CAPACITANCE C (pF)
0.5
10
OUPUT CONDUCTANCE g (µ )
5
-0.2
-0.3 -1 -5-3 -10
EMITTER CURRENT I (mA)
oe
INPUT CAPACITANCE C (pF)
INPUT CONDUCTANCE g (m )
1
E
EMITTER CURRENT I (mA)
Eie ie
C
ie
ie
COMMON
EMITTER
V =6V
CE
f=100MHz
Ta=25 C
-10-3-0.5-0.2 -1
-5
E
Page 3
2003. 3. 25 3/3
KTC9016S
Revision No : 1
y - f
oe
2000
Ω
oe
1600
1200
800
400
OUTPUT SUSCEPTANCE b (µ )
0
10.7
50
27
150
100
0
OUTPUT CONDUCTANCE g (µ )
y - f
re
0
COMMON EMITTER
V =6V
CE
I =-1mA
E
-200
Ta=25 C
Ω
-400
re
b (µ )
-600
200
-800
REVERSE TRANSFER SUSCEPTANCE
-200
-160 -120 -80 -40 0
REVERSE TRANSFER CONDUCTANCE g (µ )
f=200MHz
COMMON EMITTER
V =6V
CE
I =-1mA
E
Ta=25 C
Ω
oe
f=10.7MHz
27
50
100
150
re
y - f
fe
0
COMMON EMITTER
V =6V
CE
I =-1mA
E
-10
Ω
fe
b (m )
Ta=25 C
-20
-30
-40
12010080604020
FORWARD TRANSFER SUSCEPTANCE
0
FORWARD TRANSFER CONDUCTANCE g (m )
y - f
ie
20
Ω
16
ie
12
8
4
50
INPUT SUSCEPTANCE b (m )
27
10.7
0
0
Ω
150
100
COMMON EMITTER
V =6V
I =-1mA
Ta=25 C
5 1015202530
INPUT CONDUCTANCE g (m )
f=10.7MHz
27
50
100
150
200
5040302010
Ω
fe
f=200MHz
CE
E
Ω
ie
Pc - Ta
500
400
1
300
200
Pc (mW)
2
100
COLLECTOR POWER DISSIPATION
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
1
MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
Ta=25 C
2
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