Page 1
2003. 3. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC9015S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE(IC
=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.).
Low Noise :NF=1dB(Typ.) at f=1kHz.
Complementary to KTC9014S.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification B:100 300, C:200 600
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-50V, IE=0
- - -50 nA
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -100 nA
DC Current Gain
h
FE
(Note) VCE=-5V, IC=-1mA
100 - 600
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-100mA, IB=-10mA
- -0.1 -0.3 V
Transition Frequency
f
T
VCE=-10V, IC=-1mA, f=100MHz
60 - - MHz
Collector Output Capacitance
C
ob
VCB=-10V, IE=0, f=1MHz
- 4.0 7.0 pF
Noise Figure NF
VCE=-6V, IC=-0.1mA, Rg=10k , f=1kHz
- 1.0 10 dB
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-50 V
Collector-Emitter Voltage
V
CEO
-50 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-150 mA
Emitter Current
I
E
150 mA
Collector Power Dissipation
PC *
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* PC: Package Mounted On 99.5% Alumina (10 8 0.6 )
E
B
LL
DIM MILLIMETERS
A
B
C
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
G
A
_
2.93 0.20
+
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
h Rank
FE
Type Name
BE
Lot No.
Page 2
2003. 3. 25 2/2
KTC9015S
Revision No : 1
I - V
CCE
-240
-200
C
-2.0
-160
-120
-80
-40
COLLECTOR CURRENT I (mA)
0
0
-2 -3 -4 -5 -6
-1
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat)
-500
COMMON EMITTER
-300
I /I =10
CB
COMMON EMITTER
Ta=25 C
-1.5
-1.0
-0.5
I =-0.2mA
B
0
CE
C
1K
500
FE
300
100
DC CURRENT GAIN h
50
COMMON EMITTER
30
-0.1 -0.3 -1 -3 -10 -300-30 -100
COLLECTOR CURRENT I (mA)
1K
500
T
300
h - I
Ta =100 C
Ta =25 C
Ta =-25 C
f - I
CFE
V =-6V
CE
V =-1V
CE
C
ET
-100
CE(sat)
-50
-30
Ta =100 C
VOLTAGE V (mV)
-10
COLLECTOR-EMITTER SATURATION
-0.1 -0.3 -1 -3 -10 -300-30 -100
COLLECTOR CURRENT I (mA)
I - V
BBE
-1K
COMMON EMITTER
V =-6V
CE
-300
-100
B
-30
-10
Ta =25 C
Ta =100 C
BASE CURRENT I (ยตA)
-3
-1
-0.3
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
BASE-EMITTER VOLTAGE V (V)
Ta =25 C
Ta =-25 C
C
Ta =-25 C
BE
100
50
30
10
TRANSITION FREQUENCY f (MHz)
-0.1 -0.3 -1 -3 -10 -300-30 -100
EMITTER CURRENT I (mA)
Pc - Ta
500
400
1
300
200
Pc (mW)
2
100
COLLECTOR POWER DISSIPATION
0
25 50 75 100 125 150 175
0
AMBIENT TEMPERATURE Ta ( C)
1
2
COMMON EMITTER
V =-10V
CE
Ta =25 C
E
MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
Ta=25 C
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