Page 1
2003. 3. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC9014S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE(IC
=0.1mA)/hFE(IC=2mA)=0.95(Typ.).
Low Noise :NF=1dB(Typ.) at f=1kHz.
Complementary to KTC9015S.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification B:100 300, C:200 600, D:400 1000
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 50 nA
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 100 nA
DC Current Gain
h
FE
(Note) VCE=5V, IC=1mA
100 - 1000
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=100mA, IB=10mA
- 0.1 0.25 V
Transition Frequency
f
T
VCE=10V, IC=1mA, f=100MHz
60 - - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 2.0 3.5 pF
Noise Figure NF
VCE=6V, IC=0.1mA, Rg=10k , f=1kHz
- 1.0 10 dB
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
150 mA
Emitter Current
I
E
-150 mA
Collector Power Dissipation
PC *
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* PC: Package Mounted On 99.5% Alumina (10 8 0.6 )
E
B
LL
DIM MILLIMETERS
A
B
C
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
G
A
_
2.93 0.20
+
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
h Rank
FE
Type Name
BD
Lot No.
Page 2
2003. 3. 25 2/2
KTC9014S
Revision No : 1
I - V
CCE
(LOW VOLTAGE REGION)
240
200
C
6.0
160
120
80
40
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
5.0
1
23456
COMMON EMITTER
Ta=25 C
3.0
2.0
1.0
0.5
I =0.2mA
B
CE
0
500
300
FE
100
50
30
DC CURRENT GAIN h
COMMON EMITTER
10
0.1 0.3 1 3 10 30030 100
COLLECTOR CURRENT I (mA)
h - I
Ta =100 C
Ta =25 C
Ta =-25 C
CFE
V =6V
CE
V =1V
CE
C
V - I
CE(sat)
0.5
COMMON EMITTER
0.3
I /I =10
CB
0.1
CE(sat)
0.05
Ta =100 C
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.1 0.3 1 3 10 30030 100
COLLECTOR CURRENT I (mA)
I - V
BBE
2K
COMMON EMITTER
1K
V =6V
CE
300
B
100
30
10
=25 C
Ta
Ta =100 C
3
BASE CURRENT I (ยตA)
1
0.3
0
0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE V (V)
C
Ta =25 C
Ta =-25 C
C
Ta =-25 C
BE
f - I
1K
500
T
300
100
50
30
10
TRANSITION FREQUENCY f (MHz)
-0.1 -0.3 -1 -3 -10 -300-30 -100
EMITTER CURRENT I (mA)
Pc - Ta
500
400
1
300
200
Pc (mW)
2
100
COLLECTOR POWER DISSIPATION
0
25 50 75 100 125 150 175
0
AMBIENT TEMPERATURE Ta ( C)
1
2
ET
COMMON EMITTER
V =10V
CE
Ta =25 C
E
MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
Ta=25 C
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