Page 1
2003. 3. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC9012S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent hFELinearity.
Complementary to KTC9013S.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-30 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-500 mA
Emitter Current
I
E
500 mA
Collector Power Dissipation
PC *
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-35V, IE=0
- - -0.1
A
Emitter Cut-off Current
I
EBO
VEB=-5V, IC=0
- - -0.1
A
DC Current Gain
h
FE
(Note) VCE=-1V, IC=-50mA
96 - 246
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-100mA, IB=-10mA
- -0.1 -0.25 V
Base-Emitter Voltage
V
BE
IC=-100mA, VCE=-1V
-0.8 -1.0 V
Transition Frequency
f
T
VCE=-6V, IC=-20mA, f=100MHz
150 - - MHz
Collector Output Capacitance
C
ob
VCB=-6V, IE=0, f=1MHz
- 7.0 - pF
Note : h
FE
Classification F:96 135, G:118 166, H:144 202, I:176 246
* P
C
: Package Mounted On 99.5% Alumina (10 8 0.6 )
E
B
LL
DIM MILLIMETERS
A
B
C
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
G
A
_
2.93 0.20
+
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
h Rank
FE
Type Name
BB
Lot No.
Page 2
2003. 3. 25 2/2
KTC9012S
Revision No : 1
I - V
CCE
(LOW VOLTAGE REGION)
-600
-7
-8
-500
C
-400
-300
-200
-100
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
-6
-1
-2 -3 -4 -5
COMMON EMITTER
Ta=25 C
-5
-4
-3
-2
I =-1mA
B
0
CE
500
300
FE
100
Ta =100 C
Ta =25 C
Ta =-25 C
50
30
DC CURRENT GAIN h
COMMON EMITTER
10
-0.3
-1 -3 -10 -30 -1K-100 -300
COLLECTOR CURRENT I (mA)
h - I
CFE
V =-6V
CE
V =-1V
CE
C
V - I
CE(sat)
-0.5
COMMON EMITTER
-0.3
I /I =10
CB
-0.1
CE(sat)
-0.05
Ta =100 C
-0.03
VOLTAGE V (V)
-0.01
COLLECTOR-EMITTER SATURATION
-0.5 -1 -3 -10 -30 -1K-100 -300
COLLECTOR CURRENT I (mA)
Pc - Ta
500
400
1
1
2
C
Ta =25 C
Ta =-25 C
C
MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
Ta=25 C
BASE CURRENT I (ยตA)
I - V
BBE
-1k
COMMON
EMITTER
-300
V =-6V
CE
-100
B
-30
Ta =25 C
Ta =100 C
-10
Ta =-25 C
-3
-1
-0.3
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2
BASE-EMITTER VOLTAGE V (V)
BE
300
200
Pc (mW)
2
100
COLLECTOR POWER DISSIPATION
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
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