Page 1
2003. 3. 25 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC9011S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH FREQUENCY APPLICATION.
HF, VHF BAND AMPLIFIER APPLICATION.
FEATURE
High Power Gain : Gpe=29dB(Typ.) at f=10.7MHz.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
35 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
50 mA
Emitter Current
I
E
-50 mA
Collector Power Dissipation
PC *
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=35V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
A
DC Current Gain
h
FE
(Note) VCE=5V, IC=1mA
54 - 198
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=10mA, IB=1mA
- - 0.4 V
Transition Frequency
f
T
VCE=10V, IC=1mA, f=100MHz
100 - 400 MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 2.0 - pF
Note : h
FE
Classification F:54 80, G:72 108, H:97 146, I:132 198
* PC: Package Mounted On 99.5% Alumina (10 8 0.6 )
E
B
LL
DIM MILLIMETERS
A
B
C
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
G
A
_
2.93 0.20
+
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
h Rank
FE
Type Name
BA
Lot No.
Page 2
2003. 3. 25 2/3
KTC9011S
Revision No : 1
STATIC CHARACTERISTICS
50
40
30
V =6V
20
10
0
0.2
0.4
0.6
0.8
CE
V =6V
CE
400600
BASE CURRENT
I ( µA)
B
C
I (mA)VOLTAGE V (V)
COLLECTOR CURRENT
BE
BASE-EMITTER
550
500
450
400
350
300
250
200
150
100
I =50µA
B
COMMON
EMITTER
Ta=25 C
200 0 10 20 4030
COLLECTOR-EMITTER
VOLTAGE V (V)
CE
h - I
FE C
1K
COMMON EMITTER
V =6V
CE
500
FE
300
Ta=25 C
I
G.H
100
50
0
30
DC CURRENT GAIN h
F
10
0.2 0.5 3 10 3015 50
COLLECTOR CURRENT I (mA)
C , g - I
oe oe
300
100
oe
50
30
30
Ω
COMMON EMITTER
V =6V
f=455kHz
10
oe
Ta=25 C
5
CE
3
C
E
I
G.H
F
300
ie
100
50
30
10
INPUT CAPACITANCE C (pF)
5
3
Ω
COMMON EMITTER
V =6V
CE
f=455kHz
ie
Ta=25 C
1
0.5
0.3
0.1
INPUT CONDUCTANCE g (m )
0.05
G.H
I
C
ie
g
ie
EMITTER CURRENT I (mA)
C , g - I
F
F
G.H
I
10
5
3
OUPUT CAPACITANCE C (pF)
1
Eie ie
30
oe
10
5
3
OUPUT CAPACITANCE C (pF)
-5
-10-3-0.5-0.1 -0.3 -1
E
1
1
g
oe
0.5
0.3
OUPUT CONDUCTANCE g (µ )
0.1
-0.1
{
C
{
oe
-0.3 -1 -3 -10
EMITTER CURRENT I (mA)
C , g - I
oe oe
300
Ω
COMMON EMITTER
V =6V
CE
f=10.7MHz
oe
Ta=25 C
100
50
G.H
I
F
C
oe
30
OUPUT CONDUCTANCE g (µ )
10
EMITTER CURRENT I (mA)
I
G.H
F
E
E
I
g
oe
G.H
F
-3-0.5-0.2 -1
-5
E
Page 3
2003. 3. 25 3/3
KTC9011S
Revision No : 1
300
ie
100
50
30
INPUT CAPACITANCE C (pF)
10
3
Ω
ie
1
0.5
0.3
INPUT CONDUCTANCE g (m )
0.1
F
G.H
I
C
ie
g
ie
131030
COLLECTOR-EMITTER VOLTAGE V (V)
500
300
ie
100
50
30
INPUT CAPACITANCE C (pF)
20
5
Ω
COMMON EMITTER
V =6V
3
f=10.7MHz
ie
Ta=25 C
CE
1
0.5
0.3
INPUT CONDUCTANCE g (m )
0.2
-0.2 -0.5 -3 -5
EMITTER CURRENT I (mA)
C , g - V
ie
5
C , g - I
ie
-1
CEie
COMMON EMITTER
I =-1mA
E
f=455kHz
Ta=25 C
F
G.H
I
CE
Eie
g
ie
C
ie
E
F
G.H
G.H
300
ie
100
50
30
INPUT CAPACITANCE C (pF)
20
3
Ω
ie
1
g
ie
0.5
C
ie
0.3
INPUT CONDUCTANCE g (m )
0.2
COLLECTOR-EMITTER VOLTAGE V (V)
C , g - V
5
CEie
ie
COMMON EMITTER
I =-1mA
E
f=10.7MHz
Ta=25 C
F
G.H
I
F
G.H
I
301031
CE
Pc - Ta
500
400
I
1
300
F
I
200
Pc (mW)
2
100
COLLECTOR POWER DISSIPATION
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
1
MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
2
Ta=25 C
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