Page 1
2010. 1. 28 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC8550A
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
HIGH CURRENT APPLICATION.
FEATURE
·Complementary to KTC8050A.
MAXIMUM RATING (Ta=25℃)
TO-92 (F)
DIM MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
AJ
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAXM
1.00N
1. EMITTER
3. COLLECTOR
2. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=-15V, IE=0
- - -50 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=-0.5mA, IE=0
-35 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=-1mA, IB=0
-30 - - V
DC Current Gain
h
FE
(1) (Note) VCE=-1V, IC=-50mA
100 - 300
h
FE
(2) VCE=-1V, IC=-350mA
60 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=-500mA, IB=-50mA
- - -0.5 V
Base-Emitter Voltage
V
BE
VCE=-1V, IC=-500mA
- - -1.2 V
Transition Frequency
f
T
VCE=-5V, IC=-10mA
- 120 - MHz
Collector Output Capacitance
C
ob
VCB=-10V, f=1MHz, IE=0
- 19 - pF
Note : h
FE
(1) Classification C : 100～200, D : 150～300
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
-35 V
Collector-Emitter Voltage
V
CEO
-30 V
Emitter-Base Voltage
V
EBO
-5 V
Collector Current
I
C
-800 mA
Emitter Current
I
E
800 mA
Collector Power Dissipation
P
C
400 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Page 2
2010. 1. 28 2/2
KTC8550A
Revision No : 2
k
(
)
I - V
-1k
COMMON EMITTER
Ta=25 C
-800
C
-600
-400
-200
COLLECTOR CURRENT I (mA)
0
0
-1 -2 -3 -4 -5 -6
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
-3
-1
-0.5
-0.3
CE(sat)
-0.1
V (V)
-0.05
-0.03
-0.01
COLLECTOR-EMITTER SATURATION
-1 -3 -100-30
Ta=100 C
COLLECTOR CURRENT I (mA)
CEC
-8
I =-1mA
B
CE
COMMON EMITTER
I /I =25
B
C
Ta=25 C
Ta=-25 C
-300 -1k-10
C
h - I
2k
1k
-7
-6
-5
-4
-3
-2
0
FE
500
300
100
50
30
DC CURRENT GAIN h
10
Ta=100 C
Ta=25 C
Ta=-25 C
COLLECTOR CURRENT I (mA)
I - V
-1k
COMMON
-500
EMITTER
-300
V =-1V
C
CE
C
FE
COMMON EMITTER
V =-1V
CE
-30-10-3-1
C
BE
-100 -300
C
-1
-100
-50
-30
-10
C
Ta=100
Ta=25 C
Ta=
-25 C
-5
-3
COLLECTOR CURRENT I (mA)
-1
-0.2
-0.4 -0.6 -0.8 -1.0
BASE-EMITTER VOLTAGE V (V)
BE
Pc - Ta
700
C
600
500
400
300
200
100
0
0
COLLECTOR POWER DISSIPATION P (mW)
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta
C
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