Page 1
2003. 3. 5 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC815
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
LOW FREQUENCY AMPLIFIER
FEATURES
Collector-Base Voltage : V
CBO
=60V.
Complementary to KTA539.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
45 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
200 mA
Collector Power Dissipation
P
C
625 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=100 A, IE=0
60 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=10mA, IB=0
45 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
5 - - V
Collector Cut-off Current
I
CBO
VCB=45V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=3V, IC=0
- - 0.1
A
DC Current Gain
hFE(Note) VCE=1V, IC=50mA
70 - 240
Base-Emitter Voltage
V
BE
VCE=1V, IC=10mA
0.6 0.65 0.9 V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=150mA, IB=15mA
- 0.15 0.4 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=150mA, IB=15mA
- 0.83 1.1 V
Transition Frequency
f
T
VCE=10V, IC=10mA
100 200 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 4 - pF
Note : hFEClassification O:70~140, Y:120~240
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. BASE
3. COLLECTOR
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
E
F
G
H
K
L
0.45
1.00
1.27
0.85
0.45
J
_
+
14.00 0.50
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92
Page 2
2003. 3. 5 2/2
KTC815
Revision No : 0
I - V
C
100
90
80
C
70
60
50
40
30
20
10
COLLECTOR CURRENT I (mA)
0
0
10 15 20 25 30 35 40
5
COLLECTOR-EMITTER VOLTAGE V (V)
V , V - I
CE(sat) C
3
I =10I
CB
CE
BE(sat)
I =350µA
B
I =300µA
B
I =250µA
B
I =200µA
B
I =150µA
B
I =100µA
B
I =50µA
B
CE
1K
500
FE
300
100
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
100
V =1V
CE
h - I
301035051 100 500300
I - V
C
BE
CFE
V =1V
CE
C
1
0.5
0.3
BE(sat)CE(sat)
0.1
0.05
V , V (V)
0.03
SATURATION VOLTAGE
0.01
COLLECTOR CURRENT I (mA)
30
10
5
ob
C (pF)
3
V
BE(sat)
V
CE(sat)
C - V
C
10
1
COLLECTOR CURRENT I (mA)
0.1
0.2 0.4 0.6 0.8 1.21.0
700
600
0
BASE EMITTER VOLTAGE V (V)
Pc - Ta
BE
1001 3 10 30 300
C
ob
CB
f=1MHz
I =0
E
500
400
C
300
P (mW)
200
100
COLLECTOR POWER DISSIPATION
1
COLLECTOR OUTPUT CAPACITANCE
1
3 5 10 30 50
COLLECTOR BASE VOLTAGE V (V)
CB
0
025 12550 75 100 175150
AMBIENT TEMPERATURE Ta ( C)
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