Page 1
2008. 9. 23 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC814U
Revision No : 1
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
High Emitter-Base Voltage : V
EBO
=25V(Min.)
High Reverse h
FE
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
Low on Resistance : RON=1 (Typ.), (IB=5mA)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFEClassification B: 350 1200
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
50 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
25 V
Collector Current
I
C
300 mA
Base Current
I
B
60 mA
Collector Power Dissipation
PC *
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=50V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=25V, IC=0
- - 0.1
A
DC Current Gain
h
FE
VCE=2V, IC=4mA
350 - 1200
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=30mA, IB=3mA
- 0.042 0.3 V
Base-Emitter Voltage
V
BE
VCE=2V, IC=4mA
- 0.61 - V
Transition Frequency
f
T
VCE=6V, IC=4mA
- 30 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 4.8 7 pF
Switching
Time
Turn-on Time
t
on
- 160 -
nS
Storage Time
t
stg
- 500 -
Fall Time
t
f
- 130 -
* Total Rating
EQUIVALENT CIRCUIT (TOP VIEW)
EPITAXIAL PLANAR NPN TRANSISTOR
HB
123
456
Lot No.
Type Name
Marking
B
B1
DIM MILLIMETERS
1
C
A
2
A1
C
3
H
G
6
A
5
B
D
4
B1
C
D
G
H
T
T
_
2.00 0.20
+
_
+
1.3 0.1A1
_
2.1 0.1
+
_
1.25 0.1
+
0.65
0.2+0.10/-0.05
0-0.1
_
0.9 0.1
+
0.15+0.1/-0.05
1. Q EMITTER
1
2. Q BASE
1
3. Q COLLECTOR
2
4. Q EMITTER
2
5. Q BASE
2
6. Q COLLECTOR
1
US6
654
Q1 Q2
1
23
1µs
INPUT
<
2%
=
50Ω
10V
DUTY CYCLE
4kΩ
V =-3V
BB
3kΩ
OUTPUT
1kΩ
V =12V
CC
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2008. 9. 23 2/3
KTC814U
Revision No : 1
(Q , Q COMMON)
12
I - V
C
50
COMMON
EMITTER
Ta=25 C
40
C
30
20
10
COLLECTOR CURRENT I (mA)
0
0
246810
COLLECTOR-EMITTER VOLTAGE V (V)
h - I
FE
5k
3k
FE
Ta=100 C
1k
500
300
DC CURRENT GAIN h
100
Ta=25 C
Ta=-25 C
CE
160
I =20µA
B
CE
C
COMMON EMITTER
V =6V
CE
V =2V
CE
140
120
100
80
60
40
0
I - V (REVERSE REGION)
CCE
-10
COMMON
EMITTER
Ta=25 C
-8
C
-6
-4
-2
COLLECTOR CURRENT I (mA)
0
-2 -4 -6 -8 -10
0
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
500
COMMON EMITTER
300
I /I =10
B
C
100
50
30
CE(sat)
10
5
3
VOLTAGE V (mV)
I =10µA
B
CE
50
40
30
20
0
50
0.3 1 3 10
COLLECTOR CURRENT I (mA)
I - V
300
COMMON EMITTER
V =2V
C
200
100
COLLECTOR CURRENT I (mA)
CE
0
0
0.4 0.8 1.2 1.6
BASE-EMITTER VOLTAGE V (V)
a=100 C
T
BEC
Ta=25 C
Ta=-25 C
30 100
C
BE
COLLECTOR-EMITTER SATURATION
1
0.1 0.3 1 3
10 30 100 300
COLLECTOR CURRENT I (mA)
f - I
TE
500
300
T
100
50
30
10
TRANSTION FREQUENCY f (MHz)
5
-3-1-0.3-0.1
EMITTER CURRENT I (mA)
C
COMMON EMITTER
V =6V
CE
Ta=25 C
-10 -30 -100
E
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2008. 9. 23 3/3
KTC814U
Revision No : 1
C - V
ob
30
10
5
ob
C (pF)
3
1
COLLECTOR OUTPUT CAPACITANCE
0.3 0.5 1 3
COLLECTOR-BASE VOLTAGE V (V)
Pc - Ta
250
C
200
CB
f=1MHz
I =0
E
Ta=25 C
510 30
CB
R - I
100
50
30
10
ON
5
R (Ω)
3
1
0.5
0.3
COLLECTOR-EMITTER ON RESISTANCE
BASE CURRENT I (mA)
ON
B
10kΩ
0.30.10.030.01
B
1kΩ
I
B
1310
150
100
50
0
0
COLLECTOR POWER DISSIPATION P (mW)
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
150
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