Page 1
2001. 6. 27 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC811T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(2)=25(Min.) at VCE=6V, IC=400mA.
Complementary to KTA711T.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE(1) Classification 0:70 140, Y:120 240
h
FE
(2) Classification 0:25Min., Y:40Min.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=35V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 0.1
A
DC Current Gain
hFE(1) (Note) VCE=1V, IC=100mA
70 - 240
hFE(2) (Note) VCE=6V, IC=400mA
25 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=100mA, IB=10mA
- 0.1 0.25 V
Base-Emitter Voltage
V
BE
VCE=1V, IC=100mA
- 0.8 1.0 V
Transition Frequency
f
T
VCE=6V, IC=20mA
- 300 - MHz
Collector Output Capacitance
C
ob
VCB=6V, IE=0, f=1MHz
- 7.0 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
35 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
500 mA
Emitter Current
I
E
-500 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
EQUIVALENT CIRCUIT (TOP VIEW)
E
K
B
5
4
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
+
2.9 0.2
1.6+0.2/-0.1
_
0.70 0.05
+
_
+
0.4 0.1
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
F
A
C
K
16
G
2
G
3
L
J
1. Q EMITTER
1
2. Q BASE
1
3. Q COLLECTOR
2
4. Q EMITTER
2
5. Q BASE
2
6. Q COLLECTOR
1
TS6
654
Marking
h Rank
FE
Type Name
Q1 Q2
1
23
654
Lot No.
L
123
Page 2
2001. 6. 27 2/2
KTC811T
Revision No : 0
K
I - V
500
400
C
6.0
4.0
300
200
100
COLLECTOR CURRENT I (mA)
0
0
12345
COLLECTOR-EMITTER VOLTAGE V (V)
I - V
2k
COMMON EMITTER
1k
V =6V
CE
500
300
B
CEC
COMMON EMITTER
Ta=25 C
0
BBE
I =0.1mA
B
3.0
CE
2.0
1.0
0.5
500
300
FE
Ta=100 C
100
Ta=25 C
50
30
DC CURRENT GAIN h
COMMON
EMITTER
10
1100330
COLLECTOR CURRENT I (mA)
1
COMMON
EMITTER
0.5
I /I =10
CB
0.3
Ta=-25 C
h - I
FE C
V - I
CE(sat) C
V =6V
V =1V
C
CE
CE
300100.5
1k
BASE CURRENT I (ยตA)
100
1.2
1.0
0.8
0.6
C
P (W)
0.4
CE(sat)
a=100 C
Ta=25 C
50
T
Ta=-25 C
30
10
5
0
0.2 0.4 0.6 0.8 1.0
BASE-EMITTER VOLTAGE V (V)
BE
COLLECTOR-EMITTER SATURATION
0.1
Ta=100 C
0.05
0.03
VOLTAGE V (V)
Ta=25 C
Ta=-25 C
0.01
COLLECTOR CURRENT I (mA)
310 30100
C
30010.5
1
Pc - Ta
MOUNTED ON A
CERAMIC BOARD
2
(600mm `0.8mm)
0.2
COLLECTOR POWER DISSIPATION
0
20 40 60 80 100 120
0
140 160
AMBIENT TEMPERATURE Ta ( C)
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