Page 1
2003. 3. 25 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC8050S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH CURRENT APPLICATION.
FEATURE
Complementary to KTC8550S.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=15V, IE=0
- - 50 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=0.5mA, IE=0
35 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=1mA, IB=0
30 - - V
DC Current Gain
hFE(1) (Note) VCE=1V, IC=50mA
100 - 300
hFE(2) VCE=1V, IC=350mA
60 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=500mA, IB=20mA
- - 0.5 V
Base-Emitter Voltage
V
BE
VCE=1V, IC=500mA
- - 1.2 V
Transition Frequency
f
T
VCE=5V, IC=10mA
- 120 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz, IE=0
- 13 - pF
Note : hFE(1) Classification C : 100 200, D : 150 300
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
35 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
800 mA
Emitter Current
I
E
-800 mA
Collector Power Dissipation
PC *
350 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* PC: Package Mounted On 99.5% Alumina (10 8 0.6 )
E
B
LL
DIM MILLIMETERS
A
B
C
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
G
A
_
2.93 0.20
+
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
h Rank
FE
Type Name
BK
Lot No.
Page 2
2003. 3. 25 2/2
KTC8050S
Revision No : 1
I - V
1k
COMMON
Ta=25 C
800
C
600
400
200
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
1
0.5
0.3
CE(sat)
0.1
Ta=-25 C
0.05
VOLTAGE V (V)
0.03
Ta=100 C
COLLECTOR-EMITTER SATURATION
0.01
EMITTER
12 3456
V - I
CE(sat) C
Ta=25 C
COLLECTOR CURRENT I (mA)
CEC
COMMON EMITTER
I /I =25
B
C
3010
C
8
I =1mA
B
CE
Ta=100 C
-25 C
7
6
5
4
3
2
0
25 C
FE
500
300
100
h - I
1k
Ta=100 C
Ta=25 C
50
Ta=-25 C
CFE
COMMON EMITTER
V =1V
CE
30
DC CURRENT GAIN h
10
1310
1k
COMMON EMITTER
500
V =1V
300
C
CE
COLLECTOR CURRENT I (mA)
I - V
CBE
10030
300
1k
C
100
50
30
Ta=100 C
Ta=25 C
10
Ta=-25 C
5
3
COLLECTOR CURRENT I (mA)
1
0
1k30013 100
0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE V (V)
BE
Pc - Ta
500
400
1
300
200
Pc (mW)
2
100
COLLECTOR POWER DISSIPATION
0
25 50 75 100 125 150 175
0
AMBIENT TEMPERATURE Ta ( C)
MOUNTED ON 99.5%
1
ALUMINA 10x8x0.6mm
Ta=25 C
2
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