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2010. 1. 28 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC8050A
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH CURRENT APPLICATION.
FEATURE
·Complementary to KTC8550A.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=15V, IE=0
- - 50 nA
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=0.5mA, IE=0
35 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=1mA, IB=0
30 - - V
DC Current Gain
hFE(1) (Note) VCE=1V, IC=50mA
100 - 300
hFE(2) VCE=1V, IC=350mA
60 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=500mA, IB=20mA
- - 0.5 V
Base-Emitter Voltage
V
BE
VCE=1V, IC=500mA
- - 1.2 V
Transition Frequency
f
T
VCE=5V, IC=10mA
- 120 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz, IE=0
- 13 - pF
Note : h
FE
(1) Classification C : 100～200, D : 150～300
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
35 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
800 mA
Emitter Current
I
E
-800 mA
Collector Power Dissipation
P
C
400 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
B
K
D
F
1 2
L
E
G
H
F
C
3
M
AJ
1. EMITTER
2. BASE
3. COLLECTOR
C
DIM MILLIMETERS
N
A
4.70 MAX
B
4.80 MAX
C
3.70 MAX
D
0.45
1.00
E
F
1.27
G
0.85
H
0.45
_
J
K
L
+
14.00 0.50
0.55 MAX
2.30
0.45 MAXM
1.00N
TO-92 (F)
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2010.0 1. 28 2/2
KTC8050A
Revision No : 2
k
I - V
1k
COMMON
Ta=25 C
800
C
600
400
200
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
1
0.5
0.3
CE(sat)
0.1
Ta=-25 C
0.05
0.03
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATION
Ta=100 C
0.01
EMITTER
123456
V - I
CE(sat) C
Ta=25 C
COLLECTOR CURRENT I (mA)
CEC
I =1mA
COMMON EMITTER
I /I =25
B
C
Ta=100 C
3010
C
8
B
-25 C
CE
7
6
5
4
3
2
0
25 C
FE
500
300
100
h - I
1k
Ta=100 C
Ta=25 C
50
Ta=-25 C
CFE
COMMON EMITTER
V =1V
CE
30
DC CURRENT GAIN h
10
1310
COLLECTOR CURRENT I (mA)
10030
300
1k
2
C
I - V
CBE
1k
COMMON EMITTER
500
V =1V
300
C
CE
100
50
30
Ta=100 C
Ta=25 C
10
Ta=-25 C
5
3
COLLECTOR CURRENT I (mA)
1
0
1k30013 100
0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE V (V)
BE
Pc - Ta
700
C
600
500
400
300
200
100
0
0
COLLECTOR POWER DISSIPATION P (mW)
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
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