Page 1
2005. 12. 6 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC801F
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Thin fine pitch super mini 6pin.
Excellent temperature response between these 2 transistor.
High pairing property in hFE.
The follwing characteristics are common for Q1, Q2.
MAXIMUM RATING (Ta=25 )
EQUIVALENT CIRCUIT (TOP VIEW)
Marking
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
150 mA
Base Current
I
B
30 mA
Collector Power Dissipation
PC *
100 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current
I
CBO
VCB=60V, IE=0
- - 0.1
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 0.1
DC Current Gain
h
FE
(Note)
VCE=6V, IC=2
120 - 400
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=100 , IB=10
- 0.1 0.30 V
Transition Frequency
f
T
VCE=10V, IC=1
80 - -
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1
- 2 3.5
Noise Figure NF
VCE=6V, IC=0.1 , f=1 , Rg=10
- 1.0 10
* Total Rating
Note : hFEClassification Y(4):120 240, GR(6):200 400
B
B1
DIM MILLIMETERS
A
1
CC
A
A1
2
3
H
6
5
D
4
T
A1
B
B1
C
D
H
T 0.1 0.05
1. Q EMITTER
2. Q BASE
3. Q COLLECTOR
4. Q EMITTER
5. Q BASE
6. Q COLLECTOR
1.0 0.05
0.7 0.05
1.0 0.05
0.8 0.05
0.15 0.05
0.38+0.02/-0.04
1
1
2
2
2
1
_
+
_
+
_
+
_
+
0.35
_
+
_
+
TFS6
654
Q1 Q2
1
23
Q
123
5
Type Name
46
h Rank
FE
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2005. 12. 6 2/3
KTC801F
Revision No : 0
I - V
240
200
C
160
120
80
40
COLLECTOR CURRENT I (mA)
0
1
0.5
0.3
6.0mA
5.0mA
3.0mA
0
12345 67
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
CEC
COMMON EMITTER
Ta=25 C
2.0mA
1.0mA
0.5mA
I =0.2mA
B
0
COMMON EMITTER
I /I =10
C B
CE
1k
500
FE
300
100
Ta=100 C
Ta=25 C
Ta=-25 C
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
10
5
3
h - I
FE
310.30.1
V - I
C
COMMON EMITTER
V =5V
CE
V =1V
CE
10 30 100 300
C
CBE(sat)
COMMON EMITTER
I /I =10
C
B
Ta=25 C
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
0.1
0.3 1 3 10 30 100 300
COLLECTOR CURRENT I (mA)
f - I
TC
3k
1k
T
COMMON EMITTER
V =10V
Ta=25 C
500
300
100
50
30
10
TRANSITION FREQUENCY f (MHz)
0.1
0.3 1 3 10 30 100 300
COLLECTOR CURRENT I (mA)
Ta=100 C
Ta=-25 C
CE
Ta=25 C
C
C
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
0.1
0.3 1 10
COLLECTOR CURRENT I (mA)
3k
COMMON
EMITTER
1k
V =5V
CE
300
B
100
30
BASE CURRENT I (ยตA)
10
3
Ta=1
1
0.3
0
0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE V (V)
I - V
B
00 C
Ta=2
5 C
BE
a=-25 C
T
100 3003
30
C
BE
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2005. 12. 6 3/3
KTC801F
Revision No : 0
Pc - Ta
250
C
200
150
100
50
0
0
COLLECTOR POWER DISSIPATION P (mW)
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
150
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