Page 1
2006. 6. 30 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTC5707D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
FEATURES
Adoption of FBET, MBIT Processes.
High Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
High Allowable Power Dissipation.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
80 V
Collector-Emitter Voltage
V
CES
80
V
V
CEO
50
Emitter-Base Voltage
V
EBO
6 V
Collector Current
DC
I
C
8
A
Pulse
I
CP
11
Base Current
I
B
2 A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
15
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
A
C
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
K
F
I
J
D
B
M
E
P
DIM MILLIMETERS
A
B
C
D
E
F
H
I
O
J
K
L
L
_
6.60 0.2
+
_
6.10 0.2
+
_
5.0 0.2
+
_
1.10 0.2
+
_
2.70 0.2
+
_
2.30 0.1
+
1.00 MAX
_
2.30 0.2
+
_
0.5 0.1
+
_
+
2.00 0.20
_
+
0.50 0.10
_
+
0.91 0.10M
_
+
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
DPAK
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
_
+
6.60 0.2
_
+
6.10 0.2
_
+
5.0 0.2
_
+
1.10 0.2
_
+
9.50 0.6
_
+
2.30 0.1
_
+
0.76 0.1
1.0 MAX
_
+
2.30 0.2
_
+
0.5 0.1
_
+
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
Q
H
G
123
A
C
F
F
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
Page 2
2006. 6. 30 2/4
KTC5707D/L
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=40V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
80 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CES
IC=100 A, VBE=0
80 - - V
V
(BR)CEOIC
=1mA, IB=0
50 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
6 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)1
IC=2A, IB=40mA
- 110 170 mV
V
CE(sat)2
IC=3.5A, IB=175mA
- 160 240 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=2A, IB=40mA
- 0.83 1.2 V
DC Current Gain
h
FE
VCE=2V, IC=500mA
200 - 560 -
Transition Frequency
f
T
VCE=10V, IC=500mA
- 330 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 28 - pF
Switching
Time
Turn-On Time
t
on
- 30 -
nS
Storage Time
t
stg
- 420 -
Fall Time
t
f
- 25 -
INPUT
PW=20µs
<
DC 1%
=
50Ω
I
V
R
V =-5V
BE
20I =-20I =I =2.5A
B1
I
B2
R
B
100µF
B1
470µF
V =25V
C
B2
CC
R
L
OUTPUT
Page 3
2006. 6. 30 3/4
KTC5707D/L
Revision No : 2
7
100mA
90mA
6
(A)
C
5
4
3
2
1
COLLECTOR CURRENT I
0
0
COLLECTOR-
8
7
(A)
C
6
5
4
CURRENT I
3
2
1
COLLECTOR
0
0
I - V
CCE
80mA
0.80.4 2.01.61.2
EMITTER
IC - V
VOLTAGE, VCE (V)
BE
Ta=75 C
25 C
-25 C
0.2 0.4 0.6 0.8 1.41.21.0
BASE-EMITTER VOLTAGE VBE (V)
70mA
60mA
50mA
40mA
30mA
20mA
10mA
IB = 0mA
VCE=2V
V
CE(sat)
- I
1000
(mV)
CE (sat)
100
EMITTER
10
COLLECTOR-
SATURATION VOLTAGE V
1.0
Ta=75 C
-25 C
0.01 0.1
COLLECTOR CURRENT IC (A)
V
BE(sat)
-I
C
10
(V)
BE(sat)
V
1.0
Ta=75 C
-25 C
25 C
0.1
BASE-EMITTER SATURATION VOLTAGE
0.01 0.1 1
COLLECTOR CURRENT IC (A)
C
25 C
IC/I
= 20
B
110
IC/I
= 50
B
10
Cob-V
CB
f=1MHz
FE
1000
h - I
Ta=75 C
FE
C
(pF)
V
=2V
CE
500
ob
100
-25 C
25 C
100
10
DC CURRENT GAIN h
10
0.01
0.1
1.0 10
COLLECTOR CURRENT IC (A)
1
0.1 1.0 10
COLLECTOR OUTPUT CAPACITANCE C
COLLECTOR-BASE VOLTAGE V (V)
CB
Page 4
2006. 6. 30 4/4
KTC5707D/L
Revision No : 2
V - I
CE(sat)
10000
(mV)
1000
CE(sat)
100
VOLTAGE V
10
COLLECTOR-EMITTER SATURATION
0.10.01
-25 C
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
ICP=11A
(A)
C
10
1
IC=8A
DC OPERATION ( )
10 ms
DC OPERATION (
C
IC/IB = 50
Ta=75 C
25 C
110
500 µs
1 ms
100 µs
Tc=25 C
1000
(MHz)
T
100
TRANSITION FREQUENCY f
10
0.01 0.1
COLLECTOR CURRENT I
1.0
(W)
C
0.8
0.6
fT - I
C
P - Ta
C
NO HEAT SINK
VCE = 10V
110
(A)
C
Ta=25 C
0.1
SINGLE NONREPETITIVE
PULSE T
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
0.01
COLLECTOR CURRENT I
0.1 1 10 100
C
=
25 C
)
COLLECTOR-EMITTER VOLTAGE VCE (V)
PC - T
C
18
(W)
C
16
15
14
12
10
8
6
4
2
0
25 50 75 100 125 150
0
COLLECTOR POWER DISSIPATION P
CASE TEMPERATURE TC ( C)
100 ms
0.4
0.2
0
20 40 60 80 160100 120 140
0
COLLECTOR POWER DISSIPATION P
AMBIENT TEMPERATURE Ta ( C)
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