Page 1
2006. 6. 22 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTC5706D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
FEATURES
·Adoption of FBET, MBIT Processes.
·High Current Capacitance.
·Low Collector-to-Emitter Saturation Voltage.
·High-Speed Switching.
·Ultra small Package Facilitates Miniaturization in end Products.
·High Allowable Power Dissipation.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
80 V
Collector-Emitter Voltage
V
CES
80
V
V
CEO
50
Emitter-Base Voltage
V
EBO
6V
Collector Current
DC
I
C
5
A
Pulse
I
CP
7.5
Base Current
I
B
1.2 A
Collector Power
Dissipation
Ta=25
℃
P
C
1.0
W
Tc=25
℃
15
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
A
C
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
K
F
I
J
D
B
M
E
P
DIM MILLIMETERS
A
B
C
D
E
F
H
I
O
J
K
L
L
_
+
6.60 0.2
_
6.10 0.2
+
_
5.0 0.2
+
_
+
1.10 0.2
_
+
2.70 0.2
_
+
2.30 0.1
1.00 MAX
_
+
2.30 0.2
_
+
0.5 0.1
_
+
2.00 0.20
_
+
0.50 0.10
_
+
0.91 0.10M
_
+
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
DPAK
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
_
+
6.60 0.2
_
+
6.10 0.2
_
+
5.0 0.2
_
+
1.10 0.2
_
+
9.50 0.6
_
+
2.30 0.1
_
+
0.76 0.1
1.0 MAX
_
+
2.30 0.2
_
+
0.5 0.1
_
+
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
Q
H
G
123
A
C
F
F
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
Page 2
2006. 6. 22 2/4
KTC5706D/L
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=40V, IE=0
- - 0.1
μA
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
μA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10μA, I
E
=0
80 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CES
I
C
=100μA, V
BE
=0
80 - - V
V
(BR)CEOIC
=1mA, IB=0
50 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10μA, I
C
=0
6--V
Collector-Emitter Saturation Voltage
V
CE(sat)1
IC=1A, IB=50mA
- 90 135 mV
V
CE(sat)2
IC=2A, IB=100mA
- 160 240 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=2A, IB=100mA
- 0.88 1.2 V
DC Current Gain
h
FE
VCE=2V, IC=500mA
200 - 560
Transition Frequency
f
T
VCE=10V, IC=500mA
- 400 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
-13-pF
Switching
Time
Turn-On Time
t
on
-35-
nS
Storage Time
t
stg
- 300 -
Fall Time
t
f
-20-
Page 3
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KTC5706D/L
Revision No : 1
Page 4
2006. 6. 22 4/4
KTC5706D/L
Revision No : 1
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