Page 1
2006. 10. 10 1/4
SEMICONDUCTOR
TECHNICAL DATA
KTC5706
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
FEATURES
Adoption of FBET, MBIT Processes.
High Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Ultra small Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
80 V
Collector-Emitter Voltage
V
CES
80
V
V
CEO
50
Emitter-Base Voltage
V
EBO
6 V
Collector Current
DC
I
C
5
A
Pulse
I
CP
7.5
Base Current
I
B
1.2 A
Collector Power
Dissipation
Ta=25
P
C
1.5
W
Tc=25
20
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
A
B
C
H
J
K
M
N
1
23
D
E
F
G
L
O
P
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
+
Φ3.2 0.1
3.5
_
+
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
+
0.75 0.15
_
+
15.50 0.5
_
+
2.3 0.1
_
+
0.65 0.15
1.6
3.4 MAX
TO-126
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2006. 10. 10 2/4
KTC5706
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=40V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
80 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CES
IC=100 A, VBE=0
80 - - V
V
(BR)CEOIC
=1mA, IB=0
50 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
6 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)1
IC=1A, IB=50mA
- 90 135 mV
V
CE(sat)2
IC=2A, IB=100mA
- 160 240 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=2A, IB=100mA
- 0.88 1.2 V
DC Current Gain
h
FE
VCE=2V, IC=500mA
200 - 560
Transition Frequency
f
T
VCE=10V, IC=500mA
- 400 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 13 - pF
Switching
Time
Turn-On Time
t
on
- 35 -
nS
Storage Time
t
stg
- 300 -
Fall Time
t
f
- 20 -
PW=20µs
<
DC 1%
=
INPUT
V
R
50Ω
V =-5V
BE
10I =-10I =I =1A
B1
I
B2
R
100µF
I
B1
B
470µF
V =25V
C
B2
OUTPUT
25Ω
CC
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2006. 10. 10 3/4
KTC5706
Revision No : 0
5
(A)
C
4
3
CURRENT I
2
1
COLLECTOR
0
70mA
60mA
50mA
100mA
0 1.0
COLLECTOR-
4
(A)
3.5
C
3
2.5
2
CURRENT I
1.5
1
0.5
COLLECTOR
0
0
0.2 0.4 0.6 0.8 1.41.21.0
IC - V
CE
90mA
80mA
0.80.4 1.41.2
EMITTER
VOLTAGE VCE (V)
IC - V
BE
Ta=75 C
40mA
25 C
-25 C
30mA
20mA
10mA
5mA
IB = 0mA
VCE=2V
(mV)
10000
CE (sat)
1000
EMITTER
100
COLLECTOR-
10
0.01 0.1
SATURATION VOLTAGE V
10
(V)
1.0
BE(sat)
V
0.1
0.01 0.1 1
V
CE(sat)
- I
C
Ta=75 C
-25 C
110
COLLECTOR CURRENT IC (A)
Ta=75 C
V
-25 C
BE(sat)
25 C
-I
C
25 C
IC/I
IC/I
B
B
= 50
= 50
10
BASE-EMITTER VOLTAGE VBE (V)
1000
FE
100
25 C
DC CURRENT GAIN h
10
0.01
0.1
COLLECTOR CURRENT IC (A)
hFE - I
Ta=75 C
-25 C
C
=2V
V
CE
1.0 10
BASE-EMITTER SATURATION VOLTAGE
COLLECTOR CURRENT IC (A)
Cob-V
CB
(pF)
ob
500
100
10
1
0.1 1.0 10 100
COLLECTOR OUTPUT CAPACITANCE C
COLLECTOR-BASE VOLTAGE V
f=1MHz
(V)
CB
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2006. 10. 10 4/4
KTC5706
Revision No : 0
V
1000
CE(sat)
- I
C
(mV)
CE(sat)
100
VOLTAGE V
10
COLLECTOR-EMITTER SATURATION
0.10.01
-25 C
110
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
ICP=7.5A
10
(A)
C
1
0.1
SINGLE NONREPETITIVE
PULSE T
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
0.01
COLLECTOR CURRENT I
0.1 1 10 100
100 ms
IC=5A
DC OPERATION ( )
25 C
=
C
COLLECTOR-EMITTER VOLTAGE VCE (V)
10 ms
1 ms
DC OPERATION ( )
Ta=25 C
Ta=75 C
25 C
IC/IB = 20
100 µs
500 µs
Tc=25 C
fT - I
C
1000
(MHz)
T
100
10
TRANSITION FREQUENCY f
0.01 0.1
110
COLLECTOR CURRENT IC (A)
C
(W)
C
1.5
1.2
0.9
0.6
0.3
P - T
0
20 40 60 80 160100 120 140
0
a
NO HEAT SINK
COLLECTOR POWER DISSIPATION P
AMBIENT TEMPERATURE Ta ( C)
VCE = 10V
(W)
C
PC - T
25
20
15
10
5
0
0
50 100 150
C
COLLECTOR POWER DISSIPATION P
CASE TEMPERATURE TC ( C)
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