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2004. 11. 26 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC5242A
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 0
POWER AMPLIFIER APPLICATIONS.
FEATURES
High Collector Voltage : V
CEO
=230V(Min.)
Complementary to KTA1962A.
Recommended for 80W High Fidelity Audio Frequency
Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE(1) Classification R:55 110 , O:80 160
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
230 V
Collector-Emitter Voltage
V
CEO
230 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
15 A
Base Current
I
B
1.5 A
Collector Power Dissipation (Tc=25 )
P
C
130 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=230V, IE=0
- - 5.0
A
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 5.0
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=50mA, IB=0
230 - - V
DC Current Gain
h
FE
(1) (Note) VCE=5V, IC=1A
55 - 160
h
FE
(2) VCE=5V, IC=7A
35 60 -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=8A, IB=0.8A
- 0.4 3.0 V
Base-Emitter Voltage
V
BE
VCE=5V, IC=7A
- 1.0 1.5 V
Transition Frequency
f
T
VCE=5V, IC=1A
- 30 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 200 - pF
A
E
D
d
P
123
Q
F
J
PT
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
B
K
I
C
H
G
L
M
MILLIMETERSDIM
A 15.9 MAX
B 4.8 MAX
C 20.0 0.3
D 2.0 0.3
d 1.0+0.3/-0.25
E2.0
F 1.0
G 3.3 MAX
H9.0
I4.5
J
K 1.8 MAX
L 20.5 0.5
P 5.45 0.2
Q
T 0.6+0.3/-0.1
_
+
_
+
2.0
_
+
2.8M
_
+
_
Φ3.2 0.2
+
TO-3P(N)
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KTC5242A
Revision No : 0
I - V
12
300
10
C
8
6
4
2
COLLECTOR CURRENT I (A)
0
2 4 6 8 10 12 14 16
0
COLLECTOR-EMITTER VOLTAGE V (V)
200
h - I
1k
500
FE
300
100
50
30
Ta=100 C
Ta=25 C
Ta=-25 C
CEC
COMMON EMITTER
Ta=25 C
FE C
COMMON EMITTER
V =5V
CE
I =20mA
B
CE
140
100
I - V
CBE
12
COMMON EMITTER
V =5V
C
80
60
40
CE
9
6
3
Ta=100 C
a=-25 C
T
Ta=25 C
COLLECTOR CURRENT I (A)
0
0.4 0.8 1.2 1.6 2.0
BASE-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
COMMON EMITTER
I /I =10
B
C
Ta=25 C
Ta=-25 C
BE
CE(sat)
0.05
0.03
0
1
0.5
0.3
0.1
DC CURRENT GAIN h
10
5
3
0.01 0.03 0.1 0.3
COLLECTOR CURRENT I (A)
V - I
BE(sat)
10
5
3
1
BE(sat)
0.5
0.3
0.1
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.05
Ta=25 C
Ta=-25 C
Ta=100 C
0.03
0.01 0.03 0.1 0.3
COLLECTOR CURRENT I (A)
1 3 10 20
C
C
COMMON EMITTER
I /I =10
B
C
1 3 10 20
C
0.01
VOLTAGE V (V)
Ta=100 C
0.005
0.003
COLLECTOR-EMITTER SATURATION
0.01
0.03 0.3 1 3 10 20
0.1
COLLECTOR CURRENT I (A)
f - I
TC
100
50
30
10
5
3
1
TRANSITION FREQUENCY f (MHz)
0.5
0.01 0.03T0.1 0.3
COLLECTOR CURRENT I (A)
C
COMMON EMITTER
V =5V
CE
Tc=25 C
1310
C
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KTC5242A
Revision No : 0
Pc - Ta
k
160
120
80
C
P (W)
40
COLLECTOR POWER DISSIPATION
0
0
40 80 120 160 200
AMBIENT TEMPERATURE Ta ( C)
Tc=Ta
INFINITE HEAT SINK
r - t
th
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
1
INFINITE HEAT SINK
2
50
NO HEAT SINK
10
th
r ( C/W)
1
0.1
0.01
TRANSIENT THERMAL RESISTANCE
10.10.010.001
PULSE WIDTH t (s)
w
2
1
10 100 1
w
SAFE OPERATING AREA
50
I MAX(PULSED)
C
30
I MAX
C
(CONTINUOUS)
10
C
5
3
1
0.5
0.3
* SINGLE NONREPETITIVE
PULSE Tc=25 C
COLLECTOR CURRENT I (A)
0.1
0.05
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
0.03
35 10 30
COLLECTOR-EMITTER VOLTAGE V (V)
DC OPERATION
Tc=25 C
1ms*
10ms*
100ms*
50 100 300
CE
CEO
V MAX
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