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2008. 3. 26 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC5027
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 1
HIGH VOLTAGE AND HIGH RELIABILITY
HIGH SPEED SWITCHING, WIDE SOA
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification R:15 30, O:20 40
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=800V, IE=0
- - 10
A
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 10
A
Collector-Emitter Sustaning Voltage
V
CEX(SUS)
IC=1.5A, IB1=-IB2=0.3A
L=2mH, Clamped
800 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=1.5A, IB=0.3A
- - 2 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=1.5A, IB=0.3A
- - 1.5 V
DC Current Gain
h
FE
(1) (Note) VCE=5V, IC=0.2A
15 - 40
h
FE
(2) VCE=5V, IC=1A
8 - -
Collector-Base Breakdown Voltage
BV
CBO
IC=1mA, IE=0
1100 - - V
Collector-Emitter Breakdown Voltage
BV
CEO
IC=5mA, RBE=
800 - - V
Emitter-Base Breakdown Voltage
BV
EBO
IE=1mA, IC=0
7 - - V
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz, IE=0
- 60 - pF
Transition Frequency
f
T
VCE=10V, IC=0.2A
- 15 - MHz
Switching
Time
Turn On Time
t
on
- - 0.5
S
Storage Time
t
stg
- - 3
Fall Time
t
f
- - 0.3
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
1100 V
Collector-Emitter Voltage
V
CEO
800 V
Emitter-Base Voltage
V
EBO
7 V
Collector Current
DC
I
C
3
A
Pulse
I
CP
10
Base Current
I
B
1.5 A
Collector Power Dissipation
(Tc=25 )
P
C
50 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
20µS
I
B2
B2
INPUT
<
1%
=
I
B1
I =0.4A , I =-0.8A
B1
DUTY CYCLE
OUTPUT
I
B1
I
B2
200Ω
V =400V
CC
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KTC5027
Revision No : 1
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2008. 3. 26 3/3
KTC5027
Revision No : 1
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