Page 1
2003. 3. 27 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC5001D/L
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 5
FEATURES
Low Collector Saturation Voltage.
: V
CE(sat)
=0.13V(Typ.) at (IC=4A, IB=0.05A)
Large Collector Current
: I
C
=10A(dc) IC=15A(10ms, single pulse)
Complementary to KTA1834D/L.
APPLICATION
Low Frequency Power Amplifier.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFE(1) Classification Y:120~270, GR:180~390.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=20V
- - 1.0
A
Emitter Cut-off Current
I
EBO
VEB=5V
- - 1.0
A
Collector-Base Breakdown Voltage
BV
CBO
IC=50 A
30 - - V
Collector-Emitter Breakdown Voltage
BV
CEO
IC=1mA
20 - - V
Emitter-Base Breakdown Voltage
BV
EBO
IE=50 A
6 - - V
DC Current Gain
hFE(1) (Note) VCE=2V, IC=0.5A
120 - 390
hFE(2) VCE=2V, IC=4.0A
82 - -
Collector Emitter Saturation Voltage
V
CE(sat)
IC=4.0A, IB=0.05A
- 0.13 0.25 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=4A, IB=0.05A
- 0.9 1.2 V
Transition Frequency
f
T
VCE=5V, IE=-1.5A, f=50MHz
- 150 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 220 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
30 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
10
A
I
CP
15
Base Current
I
B
2 A
Collector Power
Dissipation
Ta=25
P
C
1.0
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Q
H
F
123
1. BASE
2. COLLECTOR
3. EMITTER
Q
H
G
123
A
C
K
F
A
C
F
F
I
J
D
B
M
E
P
DIM MILLIMETERS
A
B
C
D
E
F
H
I
O
J
K
L
L
6.60 0.2
6.10 0.2
_
5.0 0.2
+
1.10 0.2
2.70 0.2
2.30 0.1
1.00 MAX
2.30 0.2
_
+
0.5 0.1
_
+
2.00 0.20
_
+
0.50 0.10
_
+
0.91 0.10M
0.90 0.1O
_
+
1.00 0.10P
0.95 MAXQ
_
+
_
+
_
+
_
+
_
+
_
+
_
+
DPAK
I
J
D
B
K
E
P
L
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 2.0 0.2
L
P
Q
6.60 0.2
6.10 0.2
_
+
5.0 0.2
1.10 0.2
9.50 0.6
2.30 0.1
0.76 0.1
1.0 MAX
2.30 0.2
_
+
0.5 0.1
_
+
0.50 0.1
_
+
1.0 0.1
0.90 MAX
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
1. BASE
2. COLLECTOR
3. EMITTER
IPAK
Page 2
2003. 3. 27 2/3
KTC5001D/L
Revision No : 5
10
V =2V
CE
C
1
0.1
Ta=125 C
0.01
COLLECTOR CURRENT I (A)
0.001
0
0.2
0.4 0.6 0.8 1.0 1.2 1.4
COLLECTOR EMITTER VOLTAGE V (V)
2K
FE
1K
500
300
100
DC CURRENT GAIN h
50
30
-0.1-0.01 -1 -20-10
COLLECTOR CURRENT I (A)
I - V
Ta=25 C
Ta=-40 C
h - I
FE
I - V
BEC
10
Ta=25 C
C
8
50mA
6
4
2
COLLECTOR CURRENT I (A)
0
0
BE
C
Ta=25 C
COLLECTOR EMITTER VOLTAGE V (V)
-1K
Ta=25 C
CCE
45mA
40mA
35mA
30mA
25mA
20mA
15mA
10mA
5mA
I =0mA
B
12
CE
V - I
CE(sat) C
-300
V =5V
CE
2V
1V
-100
CE(sat)
I /I =80
-30
-10
VOLTAGE V (mV)
COLLECTOR SATURATION
BC
50
20
-3
-0.01 -0.03 -0.1 -0.3
C
COLLECTOR CURRENT I (A)
-1 -3 -10 -20
C
f - I
TE
1K
500
T
300
Ta=25 C
V =5V
CE
f=50MHz
1K
500
C - V
ob
CB
Ta=25 C
f=1MHz
I =0A
E
300
100
50
ob
C (pF)
100
30
50
TRANSITION FREQUENCY f (MHz)
10
-0.01 -0.03 -0.1 -1
EMITTER CURRENT I (A)
-3-0.3
E
COLLECTOR OUTPUT CAPACITANCE
30
0.1 0.3 1
COLLECTOR BASE VOLTAGE V (V)
310
CB
30
Page 3
2003. 3. 27 3/3
KTC5001D/L
Revision No : 5
Pc - Ta
12
1
10
8
6
4
2
2
0
COLLECTOR POWER DISSIPATION Pc (W)
25 50 75 100 125 150
0
AMBIENT TEMPERATURE Ta ( C)
Tc=25 C
1
2
Ta=25 C
SAFE OPERATING AREA
30
I MAX(PULSE)
C
10
I MAX
C
C
COLLECTOR CURRENT I (A)
(CONTINUOUS)
3
1
0.3
0.1
SINGLE NONREPETITIVE
*
0.03
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
0.01
0.01 0.03 0.1 0.3 1 3 10 30
COLLECTOR-EMITTER VOLTAGE V (V)
*
DC OPERATION Tc=25 C
100mS
*
10mS
*
CE
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