Page 1
2010. 6. 24 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC4380
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH VOLTAGE APPLICATION
FEATURES
·High Voltage : V
CEO
=160V.
·
Large Continuous Collector Current Capability.
·
Recommended for LED Drive Application.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
* : Mounted on ceramic substrate (250mm
2
× 0.8t)
Note : hFEClassification Y(2) : 160~320
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=160V, IE=0
- - 1.0
μA
Emitter Cut-off Current
I
EBO
VEB=6V, IC=0
- - 1.0
μA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=10mA, IB=0
160 - - V
DC Current Gain
h
FE (Note)VCE
=5V, IC=200mA
160 - 320
Collector-Emitter Saturation Voltage
V
CE(sat)(1)
IC=100mA, IB=10mA
- 0.05 0.1 V
V
CE(sat)(2)
IC=500mA, IB=50mA
- - 1.5 V
Base-Emitter Voltage
V
BE
VCE=5V, IC=5mA
0.45 - 0.75 V
Transition Frequency
f
T
VCE=5V, IC=200mA
- 100 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 15 - pF
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
160 V
Collector-Emitter Voltage
V
CEO
160 V
Emitter-Base Voltage
V
EBO
6 V
Collector Current
I
C
1 A
Base Current
I
B
0.5 A
Collector Power Dissipation
P
C
0.5
W
PC*
1
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
D
F
123
A
H
J
D
K
F
C
G
B
E
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
_
+
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
+
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
Marking
Rank
h
FE
Type Name
G 2
Lot No.
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2010. 6. 24 2/3
KTC4380
Revision No : 2
1.0
0.8
C
15
0.6
0.4
0.2
COLLECTOR CURRENT I (A)
0
4 8 12 16 20 24 28
0
COLLECTOR-EMITTER VOLTAGE V (V)
500
300
FE
100
I - V
10
6
I =0.5mA
FE C
COMMON EMITTER
Ta=25 C
CEC
COMMON
EMITTER
Ta=25 C
4
3
2.5
2
1.5
1
B
0
CE
1.0
0.8
C
0.6
0.4
0.2
COLLECTOR CURRENT I (A)
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE V (V)
I - V
CBE
25 C
100 C
Ta=
Ta=
h - Ih - I
FE
C
Ta=
0 C
COMMON
EMITTER
V =5V
CE
BE
500
Ta=100 C
Ta=25 C
Ta=0 C
V =2V
CE
300
FE
10
5
100
50
DC CURRENT GAIN h
20
10 30 100 1k
COLLECTOR CURRENT I (mA)
V - I V - I
CE(sat) C
0.5
COMMON EMITTER
0.3
Ta=25 C
0.1
CE(sat)
0.05
0.03
I /I =10
B
C
I /I =5
B
C
VOLTAGE V (V)
COLLECTOR-EMITTER SATURATION
0.01
COLLECTOR CURRENT I (mA)
30050
C
100 300
C
50
DC CURRENT GAIN h
COMMON EMITTER
V =10V
CE
V =5V
CE
20
10050
COLLECTOR CURRENT I (mA)
CE(sat) C
C
1k3003010
0.5
COMMON EMITTER
0.3
I /I =10
B
C
0.1
CE(sat)
0.05
0.03
Ta=100 C
Ta=25 C
Ta=0 C
VOLTAGE V (V)
0.01
1k30105
COLLECTOR-EMITTER SATURATION
510 30 1k
COLLECTOR CURRENT I (mA)
100 300
C
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2010. 6. 24 3/3
KTC4380
Revision No : 2
TC
500
300
T
100
50
30
TRANSITION FREQUENCY f (MHz)
10
25 100 400
COLLECTOR CURRENT I (mA)
SAFE OPERATING AREA
3k
I MAX(PULSE)
C
I MAX(CONTI-
C
1k
500
C
300
NUOUS)
100
50
30
*
DC OPERATION
COMMON EMITTER
Ta=25 C
V =5V
CE
3010
C
1mS
10mS
*
*
100mS
*
V =2V
CE
C - Vf - I
ob CB
100
ob
50
COMMON EMITTER
f=1MHz
Ta=25 C
30
10
5
2
510 3050
COLLECTOR OUTPUT CAPACITANCE C (pF)
1.2
C
1.0
COLLECTOR-BASE VOLTAGE V (V)
P - Ta
C
1
1
MOUNTED ON CERAMIC
SUBSTRATE
2
(250mm x0.8t)
2
Ta=25 C
0.8
0.6
2
0.4
20010031
CB
10
SINGLE NONREPETITIVE
*
5
PULSE
3
COLLECTOR CURRENT I (mA)
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
1
0.3 1 3 300
COLLECTOR-EMITTER VOLTAGE V (V)
10 30 100
CE
0.2
0
20 40 60 80 100 120 140 160
COLLECTOR POWER DISSIPATION P (W)
0
AMBIENT TEMPERATURE Ta ( C)
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