Page 1
2001. 12. 28 1/6
SEMICONDUCTOR
TECHNICAL DATA
KTC4080E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
Small Reverse Transfer Capacitance
: C
re
=0.7pF(Typ.)
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification R(1):40 80 , O(2):70 140 , Y(4):100 200
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=18V, IE=0
- - 0.5
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.5
A
DC Current Gain
hFE(Note) VCE=6V, IC=1mA
40 - 200
Reverse Transfer Capacitance
C
re
VCE=6V, f=1MHz
- 0.7 - pF
Transition Frequency
f
T
VCE=6V, IC=1mA
300 550 - MHz
Collector-Base Time Constant
CCrbb
’
VCB=6V, IE=-1mA, f=30MHz
- - 30 pS
Noise Figure NF
VCC=6V, IE=-1mA
f=100MHz (Fig.)
- 2.5 5.0
dB
Power Gain
G
pe
15 18 -
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
4 V
Collector Current
I
C
20 mA
Emitter Current
I
E
-20 mA
Collector Power Dissipation
P
C
100 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
E
G
A
C
2
H
1
1. EMITTER
2. BASE
3. COLLECTOR
B
D
3
J
DIM
A
B
C
D
E
G
H
J
MILLIMETERS
_
+
1.60 0.10
_
+
0.85 0.10
_
+
0.70 0.10
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
0.50
_
+
0.13 0.05
ESM
Marking
Q
Type Name
h Rank
FE
Page 2
2001. 12. 28 2/6
KTC4080E
Revision No : 1
g
y PARAMETERS (Typ.)
(1) COMMON EMITTER (VCE=6V, IE=-1mA, f=100MHz)
(2) COMMON BASE (V
CE
=6V, IE=-1mA, f=100MHz)
CHARACTERISTIC SYMBOL TYP. UNIT
Input Conductance
g
ie
2.9 mS
Input Capacitance
C
ie
10.2 pF
Reverse Transfer Admittance
|yre|
0.33
S
Phase Angle of Reverse Transfer Admittance
re
-90
Forward Transfer Admittance
|yfe|
40 mS
Phase Angle of Forward Transfer Admittance
fe
-20
Output Conductance
g
oe
45
S
Output Capacitance
C
oe
1.1 pF
CHARACTERISTIC SYMBOL TYP. UNIT
Input Conductance
g
ib
34 mS
Input Capacitance
C
ib
-10 pF
Reverse Transfer Admittance
|yrb|
0.27
S
Phase Angle of Reverse Transfer Admittance
rb
-105
Forward Transfer Admittance
|yfb|
34 mS
Phase Angle of Forward Transfer Admittance
fb
165
Output Conductance
g
ob
45
S
Output Capacitance
C
ob
1.1 pF
Fig. GpeTEST CIRCUIT
INPUT
R =50Ω
g
0.01µF
6pF
OUTPUT
R =50Ω
DUT
15pF
2.2kΩ
1000pF
L1
1000pF
L
0.01µ F
0.02µF
-V (I =-1mA)
E
E
L1 : 0.8mmΦ SILVER PLATED COPPER WIRE, 4Turns.
10mm ID, 8mm Len
th.
0.02µF
1kΩ
V
CC
Page 3
2001. 12. 28 3/6
KTC4080E
Revision No : 1
Page 4
2001. 12. 28 4/6
KTC4080E
Revision No : 1
Page 5
2001. 12. 28 5/6
KTC4080E
Revision No : 1
Page 6
2001. 12. 28 6/6
KTC4080E
Revision No : 1
Loading...