Page 1
2005. 4. 21 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC4075F
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·Excellent h
FE
Linearity
: h
FE
(0.1mA)/hFE(2mA)=0.95(Typ.).
·
High hFE: hFE=70~700.
·
Low Noise : NF=1dB(Typ.), 10dB(Max.).
·
Complementary to KTA2014F.
·
Thin Fine Pitch Small Package.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
150 mA
Base Current
I
B
30 mA
Collector Power Dissipation
P
C
50 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=60V, IE=0
- - 0.1
μA
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 0.1
μA
DC Current Gain
h
FE
(Note) VCE=6V, IC=2mA
70 - 700
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=100mA, IB=10mA
- 0.1 0.25 V
Transition Frequency
f
T
VCE=10V, IC=1mA
80 - - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 2.0 3.5 pF
Noise Figure NF
VCE=6V, IC=0.1mA,
f=1kHz, Rg=10kΩ
- 1.0 10 dB
Note : h
FE
Classification O(2):70～140, Y(4):120～240, GR(6):200～400, BL(8):350~700
E
B
D
3
J
DIM MILLIMETERS
A
B
C
D
E
G
J
K 0.15 0.05
_
0.6 0.05
+
_
+
0.8 0.05
0.38+0.02/-0.04
_
+
0.2 0.05
_
+
1.0 0.05
_
+
0.35 0.05
_
+
0.1 0.05
_
+
2
A
G
K
1
C
1. EMITTER
2. BASE
3. COLLECTOR
Marking
TFSM
Type Name
h Rank
L
FE
Page 2
2005. 4. 21 2/3
KTC4075F
Revision No : 0
240
200
C
160
120
80
40
COLLECTOR CURRENT I (mA)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
5.0
6.0
12345 67
V - I
1
0.5
0.3
I - V
3.0
CE(sat) C
CEC
COMMON EMITTER
Ta=25 C
2.0
1.0
I =0.2mA
B
COMMON EMITTER
I /I =10
C B
0.5
h - I
FE
C
1k
500
FE
300
100
50
30
Ta=100 C
Ta=25 C
Ta=-25 C
DC CURRENT GAIN h
0
CE
10
COLLECTOR CURRENT I (mA)
V - I
10
5
3
COMMON EMITTER
V =6V
CE
V =1V
310.30.1
10 30 100 300
C
CBE(sat)
COMMON EMITTER
I /I =10
C
B
Ta=25 C
CE
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
T
TRANSITION FREQUENCY f (MHz)
500
300
100
0.1
0.3 1 3 10 30 100 300
COLLECTOR CURRENT I (mA)
f - I
TC
3k
1k
50
30
10
0.1
0.3 1 3 10 30 100 300
COLLECTOR CURRENT I (mA)
Ta=100 C
Ta=25 C
Ta=-25 C
C
COMMON EMITTER
V =10V
CE
Ta=25 C
C
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
0.1
0.3 1 10
COLLECTOR CURRENT I (mA)
3k
COMMON
EMITTER
1k
V =6V
CE
300
B
100
30
10
3
BASE CURRENT I (µA)
0.3
1
0.2 0.4 0.6 0.8 1.0 1.2
0
BASE-EMITTER VOLTAGE V (V)
I - V
B
Ta=100 C
Ta=25 C
BE
Ta=-25 C
100 3003
30
C
BE
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2005. 4. 21 3/3
KTC4075F
Revision No : 0
2k
1k
500
300
100
50
30
10
5
3
h PARAMETER
1
0.5
0.3
0.1
0.1 1 3
h PARAMETER - I
GR
BL
Y
O
h xkΩ
ie
BL
Y
O
GR
GR
Y
O
h x10
re
BL
C
COMMON EMITTER
V =12V, f=270Hz
CE
Ta=25 C
BL
GR
h xµ
oe
-4
10 30 500.5 5
COLLECTOR CURRENT I (mA)
C
Pc - Ta
h PARAMETER - V
2k
1k
h
fe
300
100
Y
O
Ω
30
10
h PARAMETER
3
GR
BL
Y
O
h xkΩ
ie
1
0.3
COMMON EMITTER
I =2mA, Ta=25 C
C
GR
BL
Y
O
BL
Y
O
h x10
re
GR
CE
h
fe
Ω
h xµ
oe
BL
GR
Y
O
-4
0.1
10310.5
COLLECTOR-EMITTER VOLTAGE V (V)
30 100 300
CE
100
C
75
50
25
0
0
COLLECTOR POWER DISSIPATION P (mW)
25 50 75 100 125
AMBIENT TEMPERATURE Ta ( C)
150
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