Page 1
2007. 3. 29 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC3964
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
HIGH CURRENT APPLICATION.
Switching Applications
Solenoid Drive Applications
Temperature Compensated for Audio Amplifier Output Stage
FEATURES
High DC current gain : hFE= 500(min) (IC=400mA)
Low Collector emitter saturation voltage : VCE(sat)=0.5V(max)
(I
C
=300mA)
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=40V, IE=0
- - 10
A
Emitter Cut-off Current
I
EBO
VEB=7V, IC=0
- - 1
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
IC=10mA, IB=0
40 - - V
DC Current Gain
h
FE
VCE=1V, IC=400mA
500 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=300mA, IB=1mA
- 0.3 0.5 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=300mA, IB=1mA
- - 1.1 V
Transition Frequency
f
T
VCE=2V, IC=100mA
- 220 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 20 - pF
Switching
Time
Turn On Time
t
on
- 1.0 -
S
Storage Time
t
stg
- 3.0 -
Fall Time
t
f
- 1.2 -
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
40 V
Emitter-Base Voltage
V
EBO
7 V
Collector Current
I
C
2 A
Collector Power Dissipation
P
C
1.5 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
A
B
C
H
J
K
M
N
1
23
D
E
F
G
L
O
P
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
_
+
Φ3.2 0.1
3.5
_
+
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
_
+
0.75 0.15
_
+
15.50 0.5
_
+
2.3 0.1
_
+
0.65 0.15
1.6
3.4 MAX
TO-126
20µsec
I
B1
I =-I =-1mA,
B2
B1
INPUT
I
B2
OUTPUT
I
B1
I
B2
<
1%DUTY CYCLE
V =30V
CC
=
100Ω
Page 2
2007. 3. 29 2/2
KTC3964
Revision No : 1
IC - V
CE
2.4
Common emitter
C
(A)
C
2.0
Ta=25
20
1.6
1.2
0.8
0.4
COLLECTOR CURRENT I
0
0
3176425
IB = 0.2mA
COLLECTOR-EMITTER VOLTAGE VCE (V)
V
CE(sat)
- I
C
(V)
CE
Common emitter
I
/ IB= 300
C
1.0
Ta=100 C
0.5
hFE - I
10
5
FE
C
Common emitter
=1V
V
CE
1000
2
1
-55
100
DC CURRENT GAIN h
0
0.01
10.1
C
25
C
Ta=100 C
COLLECTOR CURRENT IC (A)
V
BE(sat)
- I
C
(V)
1.0
BE(sat)
-55 C
0.1
0.01 0.1
25 C
-55 C
1.0
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR CURRENT IC (A)
PD - Ta
(W)
D
2.0
1.5
1.0
0.5
0
080 200160120
COLLECTOR POWER DISSIPATION P
40
AMBIENT TEMPERATURE Ta ( C)
Ta=25 C
Ta=100 C
25 C
VOLTAGE V
BASE-EMITTER SATURATION
0.1
0.01 0.1 1
COLLECTOR CURRENT IC (A)
Safe Operation Area
IC Max(Pulsed)*
(A)
C
COLLCTER CURRENT I
IC Max(Continuous)
1
DC Operation
Ta=25
C
0.1
*:
Single nonrepetitive pulse
Ta = 25 C
Curves must be derated
lineraly with increase in
temperature
0.01
0.1 101
COLLECTOR EMITTER VOLTAGE VCE (V)
Common emitter
I
/ IB= 300
C
10ms*
100ms*
1s*
V
CEO
1ms*
max
Loading...