Page 1
2003. 6. 20 1/6
SEMICONDUCTOR
TECHNICAL DATA
KTC3880S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 5
HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION.
VHF BAND AMPLIFIER APPLICATION.
FEATURES
Small Reverse Transfer Capacitance
: C
re
=0.7pF(Typ.)
Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz).
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification R:40 80, O:70 140, Y:100 200
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=18V, IE=0
- - 0.5
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.5
A
DC Current Gain
h
FE
(Note) VCE=6V, IC=1mA
40 - 200
Reverse Transfer Capacitance
C
re
VCB=6V, f=1MHz, IE=0
- 0.7 - pF
Transition Frequency
f
T
VCE=6V, IC=1mA
300 550 - MHz
Collector-Base Time Constant
CCrbb
'
VCB=6V, IE=-1mA, f=30MHz
- - 30 pS
Noise Figure NF
VCC=6V, IE=-1mA, f=100MHz (Fig.)
- 2.5 5.0
dB
Power Gain
G
pe
15 18 -
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
40 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
4 V
Collector Current
I
C
20 mA
Emitter Current
I
E
-20 mA
Collector Power Dissipation
P
C
150 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
E
B
LL
MILLIMETERS
DIM
A
B
C
D
3
M
D
E
G
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
Type Name
h Rank
FE
Lot No.
AQ
Page 2
2003. 6. 20 2/6
KTC3880S
Revision No : 5
g
y PARAMETERS (Typ.)
(1) COMMON EMITTER (VCE=6V, IE=-1mA, f=100MHz)
(2) COMMON BASE (V
CE
=6V, IE=-1mA, f=100MHz)
CHARACTERISTIC SYMBOL TYP. UNIT
Input Conductance
g
ie
2.9 mS
Input Capacitance
C
ie
10.2 pF
Reverse Transfer Admittance
|yre|
0.33
S
Phase Angle of Reverse Transfer Admittance
re
-90
Forward Transfer Admittance
|yfe|
40 mS
Phase Angle of Forward Transfer Admittance
fe
-20
Output Conductance
g
oe
45
S
Output Capacitance
C
oe
1.1 pF
CHARACTERISTIC SYMBOL TYP. UNIT
Input Conductance
g
ib
34 mS
Input Capacitance
C
ib
-10 pF
Reverse Transfer Admittance
|yrb|
0.27
S
Phase Angle of Reverse Transfer Admittance
rb
-105
Forward Transfer Admittance
|yfb|
34 mS
Phase Angle of Forward Transfer Admittance
fb
165
Output Conductance
g
ob
45
S
Output Capacitance
C
ob
1.1 pF
Fig. GpeTEST CIRCUIT
INPUT
R =50Ω
g
0.01µF
6pF
OUTPUT
R =50Ω
DUT
15pF
2.2kΩ
1000pF
L1
1000pF
L
0.01µ F
0.02µF
-V (I =-1mA)
E
E
L1 : 0.8mmΦ SILVER PLATED COPPER WIRE, 4Turns.
10mm ID, 8mm Len
th.
0.02µF
1kΩ
V
CC
Page 3
2003. 6. 20 3/6
KTC3880S
Revision No : 5
STATIC CHARACTERISTICS
20
16
V =6V
12
C
I (mA)VOLTAGE V (V)
8
4
COLLECTOR CURRENT
0
CE
500
450
400
350
300
250
200
150
100
I =50µA
B
0
300
COMMON EMITTER
V =6V
FE
CE
Ta=25 C
100
50
30
DC CURRENT GAIN h
h - I
FE C
0.2
BE
0.4
0.6
BASE-EMITTER
0.8
BASE CURRENT
V =6V
CE
400600
I ( µA)
B
COMMON
EMITTER
Ta=25 C
200 0 10 20 30
COLLECTOR-EMITTER
VOLTAGE V (V)
CE
10
COLLECTOR CURRENT I (mA)
30
ie
ie
10
5
3
INPUT CAPACITANCE C (pF)
INPUT CONDUCTANCE g (mS)
1
EMITTER CURRENT I (mA)
10.1 0.3 0.5
C , g - I
C
ie
g
ie
-1
35 10 20
C
Eie ie
COMMON EMITTER
V =6V
CE
f=100MHz
Ta=25 C
-5
-10-3-0.5-0.2
E
C , g - I
oe oe
30
oe
10
5
3
1
OUPUT CAPACITANCE C (pF)
0.5
300
oe
100
50
30
10
OUPUT CONDUCTANCE g (µS)
5
COMMON EMITTER
V =6V
CE
f=100MHz
Ta=25 C
EMITTER CURRENT I (mA)
E
3
g
oe
re
1
0.5
-300
C
oe
-5
-10-3-0.5-0.2 -1
E
ADMITTANCE Θ ( )
-100
-50
PHASE ANGLE OF REVERSE TRANSFER
0.3
re
y (mS)
0.1
0.05
REVERSE TRANSFER ADMITTANCE
y , Θ - I
y
Θ
E
rere
COMMON EMITTER
V =6V
CE
f=100MHz
Ta=25 C
re
re
-1
EMITTER CURRENT I (mA)
E
-5
-10-3-0.5-0.2
Page 4
2003. 6. 20 4/6
KTC3880S
Revision No : 5
y , Θ - I
fe fe
-100
-50
100
50
fe
-30
ADMITTANCE Θ ( )
-10
-5
PHASE ANGLE OF FORWARD TRANSFER
30
fe
y (mS)
10
FORWARD TRANSFER ADMITTANCE
5
-0.2 -0.5 -3 -10
-1
EMITTER CURRENT I (mA)
C , g - I
ob ob
20
10
ob
5
3
1
OUPUT CAPACITANCE C (pF)
0.5
200
COMMON EMITTER
V =6V
CB
f=100MHz
Ta=25 C
ob
100
50
30
10
OUPUT CONDUCTANCE g (µS)
5
EMITTER CURRENT I (mA)
E
y
fe
Θ
fe
COMMON BASE
V =6V
CE
f=100MHz
Ta=25 C
E
E
g
ob
C
ob
E
C , g - I
-100
ib
-50
-30
-10
INPUT CAPACITANCE C (pF)
-5
-5
1K
500
fb
300
100
ADMITTANCE Θ ( )
-5
-10-3-0.5-0.2 -1
50
PHASE ANGLE OF FORWARD TRANSFER
100
ib
50
30
10
INPUT CONDUCTANCE g (mS)
5
-0.2 -0.5 -3 -10
-1
EMITTER CURRENT I (mA)
y , Θ - I
fb fb
100
COMMON BASE
V =6V
CB
f=100MHz
50
Ta=25 C
30
fb
y (mS)
10
5
FORWARD TRANSFER ADMITTANCE
-0.2 -0.5 -3
-1
EMITTER CURRENT I (mA)
g
ib
COMMON BASE
V =6V
f=100MHz
Ta=25 C
Eib ib
C
ib
CB
-5
E
E
y
fb
Θ
fb
-10
-5
E
y , Θ - I
rb
-1k
-500
rb
-300
-100
ADMITTANCE Θ ( )
-50
PHASE ANGLE OF FORWARD TRANSFER
1
COMMON BASE
V =6V
CB
0.5
f=100MHz
Ta=25 C
0.3
y
rb
rb
y (mS)
Θ
0.1
REVERSE TRANSFER ADMITTANCE
0.05
rb
-0.2 -0.5 -3 -10
EMITTER CURRENT I (mA)
rb
E
20
10
ie
ie
5
3
INPUT CAPACITANCE C (pF)
INPUT CONDUCTANCE g (mS)
-1
-5
E
1
13
COLLECTOR-BASE VOLTAGE V (V)
C , g - V
C
ie
g
ie
ie
COMMON BASE
I =-1mA
f=100MHz
Ta=25 C
5
CEie
E
3010
CE
Page 5
2003. 6. 20 5/6
KTC3880S
Revision No : 5
C , g - V
10
oe
5
3
1
OUTPUT CAPACITANCE C (pF)
0.5
re
300
100
ADMITTANCE Θ ( )
50
PHASE ANGLE OF REVERSE TRANSFER
100
COMMON EMITTER
I =-1mA
E
f=100MHz
oe
50
Ta=25 C
30
10
IOUUT CONDUCTANCE g (µS)
5
COLLECTOR-EMITTER VOLTAGE V (V)
y , Θ - V
re
1
0.5
y
re
0.3
re
y (mS)
Θ
0.1
REVERSE TRANSFER ADMITTANCE
0.05
1310
re
COLLECTOR-EMITTER VOLTAGE V (V)
CEoe oe
g
oe
C
oe
10315 30
CE
re
CE
COMMON EMITTER
I =-1mA
E
f=100MHz
Ta=25 C
305
CE
y , Θ - V
-100
-50
-30
fe
-10
ADMITTANCE Θ ( )
-5
PHASE ANGLE OF FORWARD TRANSFER
100
50
y
fe
30
Θ
fe
y (mS)
fe
10
5
FORWARD TRANSFER ADMITTANCE
COLLECTOR-EMITTER VOLTAGE V (V)
C , g - V
-100
-50
ib
-30
-10
INPUT CAPACITANCE C (pF)
-5
100
50
ib
g
ib
30
C
ib
10
INPUT CONDUCTANCE g (mS)
5
COLLECTOR-BASE VOLTAGE V (V)
CEfe
fe
COMMON EMITTER
I =-1mA
E
f=100MHz
Ta=25 C
530
1031
CE
CBib ib
COMMON BASE
I =-1mA
E
f=100MHz
Ta=25 C
3051310
CB
y , Θ - V
C , g - V
ob
ob
30
ob
10
5
3
1
OUPUT CAPACITANCE C (pF)
0.5
300
ob
100
50
30
10
OUPUT CONDUCTANCE g (µS)
5
COMMON BASE
I =-1mA
E
f=100MHz
Ta=25 C
g
COLLECTOR-BASE VOLTAGE V (V)
CB
300
fb
ob
300
C
ob
3051310
CB
ADMITTANCE Θ ( )
100
PHASE ANGLE OF FORWARD TRANSFER
100
50
fb
y (mS)
30
10
FORWARD TRANSFER ADMITTANCE
COLLECTOR-BASE VOLTAGE V (V)
fb
y
fb
Θ
fb
3
fb
5
CB
COMMON BASE
I =-1mA
E
f=100MHz
Ta=25 C
CB
30101
Page 6
2003. 6. 20 6/6
KTC3880S
Revision No : 5
y , Θ - V
rb
2
1
rb
-300
-100
ADMITTANCE Θ ( )
-50
PHASE ANGLE OF REVERSE TRANSFER
0.5
y
0.3
rb
y (mS)
rb
Θ
rb
0.1
REVERSE TRANSFER ADMITTANCE
0.05
13
COLLECTOR-BASE VOLTAGE V (V)
2000
oe
1600
1200
800
400
OUTPUT SUSCEPTANCE b (µS)
0
10.7
50
27
0
OUTPUT CONDUCTANCE g (µS)
rb
5
y - f
oe
f=200MHz
150
100
COMMON EMITTER
V =6V
CE
I =-1mA
E
Ta=25 C
CB
COMMON BASE
I =-1mA
E
f=100MHz
Ta=25 C
CB
oe
y - f
ie
20
16
ie
12
100
8
4
50
INPUT SUSCEPTANCE b (mS)
3010
27
10.7
0
0
150
COMMON EMITTER
V =6V
I =-1mA
Ta=25 C
5 1015202530
INPUT CONDUCTANCE g (mS)
y - f
fe
0
COMMON EMITTER
V =6V
CE
I =-1mA
E
-10
Ta=25 C
f=200MHz
CE
E
ie
f=10.7MHz
27
50
100
150
-20
fe
b (mS)
-30
-40
12010080604020
FORWARD TRANSFER SUSCEPTANCE
0
FORWARD TRANSFER CONDUCTANCE g (mS)
200
5040302010
fe
y - f
re
0
COMMON EMITTER
V =6V
CE
I =-1mA
E
-200
Ta=25 C
-400
re
b (µS)
f=10.7MHz
27
50
100
150
-600
200
-800
REVERSE TRANSFER SUSCEPTANCE
-200
-160 -120 -80 -40 0
REVERSE TRANSFER CONDUCTANCE g (µS)
re
200
150
100
C
P (mW)
50
COLLECTOR POWER DISSIPATION
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
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