Page 1
2007. 5. 29 1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC3876S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(2)=25(Min.) at VCE=6V, IC=400mA.
Complementary to KTA1505S.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
(Note) : hFE(1) Classification O:70 140 Y:120 240 GR:200 400
h
FE
(2) Classification O:25Min. Y:40Min.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
35 V
Collector-Emitter Voltage
V
CEO
30 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
500 mA
Base Current
I
B
50 mA
Collector Power Dissipation
P
C
150 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=35V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 0.1
A
DC Current Gain (Note)
hFE(1) VCE=1V, IC=100mA
70 - 400
hFE(2) VCE=6V, IC=400mA
25 - -
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=100mA, IB=10mA
- 0.1 0.25 V
Base-Emitter Voltage
V
BE
VCE=1V, IC=100mA
- 0.8 1.0 V
Transition Frequency
f
T
VCE=6V, IC=20mA
- 300 - MHz
Collector Output Capacitance
C
ob
VCB=6V, IE=0, f=1MHz
- 7.0 - pF
E
B
LL
MILLIMETERS
DIM
A
B
C
D
3
M
D
E
G
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
h Rank
FE
Type Name
Lot No.
W
Page 2
2007. 5. 29 2/2
KTC3876S
Revision No : 3
I - V
CCE
(LOW VOLTAGE REGION)
500
400
C
6.0
300
200
100
COLLECTOR CURRENT I (mA)
0
0
1
COLLECTOR-EMITTER VOLTAGE V (V)
4.0
2345
COMMON EMITTER
Ta=25 C
3.0
2.0
1.0
0.5
I =0.1mA
B
CE
500
300
FE
100
Ta =100 C
Ta =25 C
Ta =-25 C
50
30
DC CURRENT GAIN h
COMMON EMITTER
10
1 3 10 30 1K100 300
0.5
COLLECTOR CURRENT I (mA)
h - I
CFE
V =6V
CE
V =1V
CE
C
V - I
CE(sat)
1
COMMON EMITTER
I /I =10
CB
0.5
0.3
CE(sat)
0.1
VOLTAGE V (V)
0.05
0.03
COLLECTOR-EMITTER SATURATION
0.5 1 3 10 30 1K100 300
Ta =100 C
COLLECTOR CURRENT I (mA)
Pc - Ta
500
400
1
1
2
C
Ta =25 C
Ta =-25 C
C
MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
Ta=25 C
BASE CURRENT I (ยตA)
I - V
BBE
2K
COMMON
1K
EMITTER
V =6V
500
300
B
CE
100
50
30
=100 C
Ta
Ta =25 C
Ta =-25 C
10
5
0
0.2 0.4 0.6 0.8 1.0 1.2
BASE-EMITTER VOLTAGE V (V)
BE
300
200
Pc (mW)
2
100
COLLECTOR POWER DISSIPATION
0
25 50 75 100 125 150 175
0
AMBIENT TEMPERATURE Ta ( C)
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