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2004. 12. 4 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3875S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(0.1mA)/hFE(2mA)=0.95(Typ.).
High h
FE
: hFE=70 700.
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTA1504S.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : hFEClassification O:70 140, Y:120 240, GR(G):200 400, BL(L):350 700
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
60 V
Collector-Emitter Voltage
V
CEO
50 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
I
C
150 mA
Base Current
I
B
30 mA
Collector Power Dissipation
P
C
150 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=60V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=5V, IC=0
- - 0.1
A
DC Current Gain
hFE(Note) VCE=6V, IC=2mA
70 - 700
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=100mA, IB=10mA
- 0.1 0.25 V
Base-Emitter Saturation Voltage
V
BE(sat)
IC=100mA, IB=10mA
- 0.86 1.0 V
Transition Frequency
f
T
VCE=10V, IC=1mA
80 - - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz
- 2.0 3.5 pF
Noise Figure NF
VCE=6V, IC=0.1mA
f=1kHz, Rg=10k
- 1.0 10 dB
E
B
LL
MILLIMETERS
DIM
A
B
C
D
3
M
D
E
G
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
Type Name
h Rank
FE
Lot No.
AL
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2004. 12. 4 2/3
KTC3875S
Revision No : 3
I - V
280
240
C
200
6.0
160
120
80
40
COLLECTOR CURRENT I (mA)
0
0
123456
COLLECTOR-EMITTER VOLTAGE V (V)
3
1
0.5
0.3
5.0
V - I
CE(sat) C
CEC
COMMON EMITTER
Ta=25 C
3.0
2.0
1.0
0.5
I =0.2mA
B
0
CE
COMMON EMITTER
I /I =10
B
C
3k
FE
1k
500
300
100
50
30
DC CURRENT GAIN h
10
0.1
0.3 1 3 10 30 100 300
COLLECTOR CURRENT I (mA)
30
10
5
3
BE(sat)
h - I
FE C
Ta=100 C
Ta=25 C
Ta=-25 C
V - I
BE(sat) C
COMMON
EMITTER
V =6V
CE
V =1V
CE
C
COMMON EMITTER
I /I =10
C
B
Ta=25 C
CE(sat)
0.1
V (V)
0.05
0.03
0.01
COLLECTOR-EMITTER SATURATION
0.1
0.3 1 3 10 30 100 300
Ta=100 C
Ta=25 C
Ta=-25 C
COLLECTOR CURRENT I (mA)
f - I I - V
TE
3k
T
1k
500
300
100
50
30
TRANSITION FREQUENCY f (MHz)
10
EMITTER CURRENT I (mA)
C
COMMON EMITTER
V =10V
CE
Ta=25 C
E
1
0.5
0.3
VOLTAGE V (V)
BASE-EMITTER SATURATION
0.1
0.1
0.3 1 3 10 30 100 300
3k
COMMON EMITTER
V =6V
1k
CE
COLLECTOR CURRENT I (mA)
BBE
C
300
B
100
Ta=25
Ta=100 C
C
Ta=-25 C
30
10
3
BASE CURRENT I (µA)
1
0.3
-300-100-30-10-3-1-0.3-0.1
0.2 0.4 0.6 0.8 1.0 1.2
0
BASE-EMITTER VOLTAGE V (V)
BE
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2004. 12. 4 3/3
KTC3875S
Revision No : 3
5k
1k
300
100
30
10
h PARAMETER
3
1
0.3
0.1
0.1
200
h PARAMETER - I
GR
Ω
h xk
ie
BL
GR
Y
O
BL
Y
O
h x10
re
COMMON EMITTER
V =12V, f=270Hz
CE
Ta=25 C
BL
Y
O
GR
GR
-4
BL
C
h xµ
oe
h
Y
O
Ω
0.3 1 3 10 50
COLLECTOR CURRENT I (mA)
P - Ta
C
C
h PARAMETER - V
5k
3k
1k
fe
300
CE
COMMON EMITTER
I =2mA
C
Ta=25 C
BL
f=270Hz
GR
Y
O
h
fe
100
30
10
h PARAMETER
h xkΩ
ie
3
1
0.3
BL
GR
O
Y
O
Y
BL
h x10
re
GR
-4
h xµ
oe
BL
GR
Y
O
Ω
0.1
10310.5
COLLECTOR-EMITTER VOLTAGE V (V)
30 100 300
CE
150
100
C
P (mW)
50
COLLECTOR POWER DISSIPATION
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
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