Page 1
SEMICONDUCTOR
TECHNICAL DATA
KTC3790S
EPITAXIAL PLANAR NPN TRANSISTOR
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure, High Gain.
NF=1.2dB, |S
21e
|2=13dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
1. EMITTER
2. BASE
3. COLLECTOR
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note 1 : hFEClassification L:50~100, M:80~160, N:125~250.
Note 2 : C
re
is measured by 3 terminal method with capacitance bridge.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
20 V
Collector-Emitter Voltage
V
CEO
10 V
Emitter-Base Voltage
V
EBO
1.5 V
Collector Current
I
C
65 mA
Collector Power Dissipation
P
C
150 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=10V, IE=0
- - 1
A
Emitter Cut-off Current
I
EBO
VEB=1V, IC=0
- - 1
A
DC Current Gain
h
FE
(Note1) VCE=8V, IC=20mA
50 - 250
Reverse Transfer Capacitance
C
re
VCB=10V, IE=0, f=1MHz (Note2)
- 0.35 0.9 pF
Transition Frequency
f
T
VCE=8V, IC=20mA
- 9 - GHz
Insertion Gain
|S
21e
|
2
VCE=8V, IC=20mA, f=1GHz
11 13 - dB
Noise Figure NF
VCE=8V, IC=7mA, f=1GHz
- 1.2 2.5 dB
2007. 8. 22 1/5Revision No : 0
Marking
h Rank
Type Name
FE
R
Lot No.
Page 2
2007. 8. 22 2/5
KTC3790S
Revision No : 0
TYPICAL CHARACTERISTICS
300
FE
200
h
FE
- I
C
3
2
Cre - V
CB
100
70
50
30
DC CURRENT GAIN h
V
=8V
CE
Ta=25 C
10
COLLECTOR CURRENT IC (mA)
f - I
TC
30
(GHz)
T
20
10
5
1
1 5 10 3020
TRANSITION FREQUENCY f
50.5 50
101
V
=8V
CE
Ta=25 C
1
0.5
f =1.0MHz
Ta=25 C
0.1
1
REVERSE TRANSFER CAPACITANCE Cre (pF)
COLLECTOR-BASE VOLTAGE V
2
S
- I
15
2
(dB)
21e
10
5
INSERTION GAIN S
0
1
0.5
21e
C
510 5070
20 30105
CB
V
CE
f = 1.0GHz
Ta=25 C
(V)
= 8V
COLLECTOR CURRENT IC (mA)
NF - I
C
V
= 8V
CE
f = 1.0GHz
Ta=25 C
COLLECTOR CURRENT IC (mA)
50 701051
20
=8V
V
CE
I
=20mA
C
16
(dB)
2
Ta=25 C
21e
12
8
4
INSERTION GAIN S
0
0.1 3.0
COLLECTOR CURRENT I
2
S
- f
21e
2
S
21e
0.5
(mA)
C
7
6
5
4
3
2
NOISE FIGURE NF (dB)
1
0
2.01.0
0.5
FREQUENCY f (GHz)
Page 3
2007. 8. 22 3/5
KTC3790S
Revision No : 0
(mW)
Frequency
S
11
S
21
S
21
S
22
MHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.
200 0.728 -45.3
12.107 138.7 0.036 66.2 0.825 -21.6
400 0.490 -74.5
8.097 114.2 0.065 61.6 0.675 -26.6
600 0.343 -93.2
6.260 102.3 0.079 61.6 0.582 -29.0
800 0.253 -110.1
4.623 90.1 0.090 61.2 0.529 -28.6
1000 0.202 -131.1
4.004 83.6 0.101 61.3 0.500 -30.1
1200 0.176 -148.9
3.250 75.8 0.125 60.8 0.470 -31.4
1400 0.176 -162.8
3.021 69.4 0.144 60.0 0.448 -33.4
1600 0.179 173.9
2.575 63.4 0.160 59.8 0.427 -34.8
1800 0.186 163.3
2.520 58.9 0.188 59.1 0.406 -37.5
2000 0.211 151.1
2.183 53.4 0.202 58.9 0.386 -44.5
S-PARAMETER
(V
CE
= 8V, IC = 5mA, ZO=50 Ta = 25 )
(V
CE
= 8V, IC = 20mA, ZO=50 Ta = 25 )
Frequency
S
11
S
21
S
21
S
22
MHz Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.
200
0.366 -66.8 19.757 116.9 0.033 62.6 0.587 -22.5
400
0.194 -88.9 10.502 98.8 0.055 70.6 0.485 -23.8
600
0.124 -104.3 7.591 91.1 0.072 74.6 0.453 -24.3
800
0.077 -132.0 5.446 82.0 0.095 73.2 0.419 -23.2
1000
0.063 -156.4 4.653 77.6 0.107 72.1 0.413 -24.2
1200
0.065 179.5 3.754 71.6 0.135 72.1 0.392 -26.4
1400
0.074 168.0 3.460 66.5 0.164 70.1 0.369 -29.9
1600
0.108 147.0 2.934 61.9 0.178 69.6 0.347 -32.2
1800
0.116 137.6 2.870 58.2 0.205 66.3 0.333 -34.3
2000
0.134 131.2 2.479 53.4 0.221 64.0 0.312 -42.1
C
P
Pc - Ta
200
100
COLLECTOR POWER DISSIPATION
0
0
50 100 150
AMBIENT TEMPERATURE Ta ( C)
Page 4
2007. 8. 22 4/5
KTC3790S
Revision No : 0
j10
0
-j10
S
11e
V =8V
CE
I =5mA
C
Ta=25 C
(UNIT : Ω)
j25
10
-j25
S
12e
V =8V
CE
I =5mA
C
j50
j100
j150
Ta=25 C
120
150
90
60
2GHz
30
j250
2GHz
25
50
100 250
f=0.2GHz
-j250
-j150
_
+
180
-150
0
f=0.2GHz
0.24
0.180.120.061
0
-30
-j100
-60
-j50
-120
-90
_
+
180
S
21e
V =8V
CE
I =5mA
C
Ta=25 C
150
-150
120
f=0.2GHz
-120
90
-90
S
22e
V =8V
CE
I =5mA
C
60
Ta=25 C
(UNIT : Ω)
j25
30
j10
2GHz
0
117.33.6
15
0
10
0
25
-j10
-30
-j25
j50
50
2GHz
j100
j150
j250
100 250
f=0.2GHz
-j250
-j150
-j100
-60
-j50
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2007. 8. 22 5/5
KTC3790S
Revision No : 0
S
11e
V =8V
CE
I =20mA
(UNIT : Ω)
C
j50
-j50
j100
-j100
j150
-j150
-j250
j250
j25
j10
-j25
-j10
0
Ta=25 C
Ta=25 C
Ta=25 C
S
12e
V =8V
CE
I =20mA
C
S
22e
V =8V
CE
I =20mA
(UNIT : Ω)
C
Ta=25
C
S
21e
V =8V
CE
I =20mA
C
502510
100 250
f=0.2GHz
90
0
120
-30
150
-60
60
-150
30
-120
180
-90
0
j50
-j50
j100
-j100
j150
-j150
-j250
j250
j25
j10
-j25
-j10
0
502510
100 250
f=0.2GHz
90
0
120
-30
150
-60
60
-150
30
-120
180
0
-90
+
_
f=0.2GHz
0.27
0.2
0.13
0.066
f=0.2GHz
24
18125.9
2GHz
2GHz
2GHz
2GHz
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