Page 1
2003. 2. 12 1/5
SEMICONDUCTOR
TECHNICAL DATA
KTC3770S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure, High Gain.
NF=1.1dB, |S
21e
|2=11dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note 1 : hFEClassification A:50~100, B:80~160, C:125~250.
Note 2 : C
re
is measured by 3 terminal method with capacitance bridge.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
20 V
Collector-Emitter Voltage
V
CEO
12 V
Emitter-Base Voltage
V
EBO
3 V
Collector Current
I
C
100 mA
Collector Power Dissipation
P
C
150 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=10V, IE=0
- - 1
A
Emitter Cut-off Current
I
EBO
VEB=1V, IC=0
- - 1
A
DC Current Gain
h
FE
(Note1) VCE=10V, IC=20mA
50 - 250
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz (Note2)
- - 1.0 pF
Reverse Transfer Capacitance
C
re
- 0.65 1.15 pF
Transition Frequency
f
T
VCE=10V, IC=20mA
5 7 - GHz
Insertion Gain
|S
21e
|
2
VCE=10V, IC=20mA, f=1GHz
7.5 11.5 - dB
Noise Figure NF
VCE=10V, IC=7mA, f=1GHz
- 1.1 2 dB
E
B
LL
DIM MILLIMETERS
A
B
C
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
C
H
N
2
1
PP
K
1. EMITTER
2. BASE
3. COLLECTOR
A
G
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
SOT-23
Marking
h Rank
FE
Type Name
R
Lot No.
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2003. 2. 12 2/5
KTC3770S
Revision No : 1
TYPICAL CHARACTERISTICS (Ta=25 C)
Pc - Ta
300
C
250
200
150
100
50
0
0
COLLECTOR POWER DISSIPATION P (mW)
500
300
FE
100
50 100 15025 75 125
AMBIENT TEMPERATURE Ta ( C)
h - I
FE
C
V =10V
CE
C , C - V
ob re
5
re
3
ob
1
0.5
0.3
OUTPUT CAPACITANCE C (pF)
0.1
0.1
0.3 0.5 1 3 5 10
REVERSE TRANSFER CAPACITANCE C (pF)
COLLECTOR-BASE VOLTAGE V (V)
2
S - I
2le
C
15
2
2le
10
CB
f=1MHz
Ta=25 C
C
re
C
ob
CB
50
30
DC CURRENT GAIN h
10
COLLECTOR CURRENT I (mA)
f - I
TC
10
V =10V
CE
T
5
3
1
TRANSITION FREQUENCY f (GHz)
1 3 5 10 30 50 100
C
5
V =10V
C
CE
f=1.0GHz
V =10V
CE
I =20mA
C
INSERTION GAIN S (dB)
0
1003010310.5
1
3 5 10 30 50 100
COLLECTOR CURRENT I (mA)
2
S - f
2le
30
2
2le
20
2
S
2le
10
INSERTION GAIN S (dB)
0
0.1
0.3 0.5 1 3
COLLECTOR CURRENT I (mA)
C
FREQUENCY f (GHz)
Page 3
2003. 2. 12 3/5
KTC3770S
Revision No : 1
f (MHz)
|S11|
S
11
|S21|
S
21
|S12|
S
12
|S22|
S
22
200 0.651 -69.3 10.616 129.3 0.051 59.2 0.735 -28.1
400 0.467 -113.3 6.856 104.4 0.071 54.4 0.550 -34.1
600 0.391 -139.3 4.852 90.9 0.086 56.0 0.468 -33.9
800 0.360 -159.2 3.802 81.2 0.101 59.1 0.426 -33.6
1000 0.360 -176.9 3.098 72.9 0.118 61.0 0.397 -35.7
1200 0.361 172.7 2.646 67.3 0.137 63.5 0.373 -38.3
1400 0.381 160.3 2.298 59.3 0.157 63.3 0.360 -43.0
1600 0.398 152.2 2.071 55.2 0.180 64.1 0.337 -45.9
1800 0.423 143.3 1.836 49.0 0.203 63.7 0.320 -52.3
2000 0.445 137.6 1.689 46.2 0.220 64.7 0.302 -52.2
S-PARAMETER
(VCE=10V, IC=5mA, ZO=50 )
(VCE=10V, IC=20mA, ZO=50 )
f (MHz)
|S11|
S
11
|S21|
S
21
|S12|
S
12
|S22|
S
22
200 0.339 -107.0 16.516 108.7 0.035 66.1 0.459 -36.6
400 0.258 -147.3 8.928 92.1 0.060 71.0 0.343 -32.9
600 0.243 -167.7 6.022 83.0 0.085 71.9 0.305 -29.9
800 0.242 177.0 4.633 76.2 0.109 72.2 0.284 -29.4
1000 0.260 164.5 3.744 69.9 0.136 70.4 0.266 -31.7
1200 0.269 157.6 3.193 65.7 0.160 69.9 0.246 -35.0
1400 0.294 148.7 2.750 58.8 0.187 66.7 0.233 -40.4
1600 0.314 143.1 2.479 55.5 0.212 65.2 0.208 -43.6
1800 0.343 136.5 2.185 50.1 0.238 62.4 0.190 -50.5
2000 0.367 131.4 2.016 47.8 0.254 61.6 0.173 -48.3
2
S - V
2le
5
4
3
2
1
NOISE FIGURE NF (dB)
0
COLLECTOR CURRENT I (mA)
NF - I
C
15
12
2
2le
9
6
3
INSERTION GAIN S (dB)
0
0
246810
COLLECTOR-EMITTER VOLTGE V (V)
C
V =10V
CE
f=1.0GHz
1003010310.5
CE
f=1.0GHz
I =20mA
C
CE
Page 4
2003. 2. 12 4/5
KTC3770S
Revision No : 1
j10
0
-j10
S
11e
V =10V
CE
I =5mA
C
Ta=25 C
(UNIT : Ω)
j25
2.0
1.6
1.2
10 25 50
0.8
0.4
-j25
S
12e
V =10V
CE
I =5mA
C
j50 90
Ta=25 C
120
j100
f=0.2GHz
j150
150
1.0
j250
100 250
_
+
180
46810
2
-j250
-j150
f=0.2GHz
-150
-j100
-120
-j50
-90
10
8
6
4
0.8
1.2
2
1.6
2.0
0
60
30
0
-30
-60
_
+
180
S
21e
V =10V
CE
I =5mA
C
Ta=25 C
150
-150
120
-120
90
-90
0
0.25
0.20
0.15
0.10
0.05
2.0
1.6
1.2
0.8
0.4
f=0.2GHz
60
-60
S
22e
V =10V
CE
I =5mA
C
Ta=25 C
j50
(UNIT : Ω)
j25
30
j10
10 25 50
0
0
0.25
0.200.150.100.05
0.8
1.6
-j10
2.0
1.2
-30
-j25
j100
100 250
0.4
f=0.2GHz
-j100
j150
j250
-j250
-j150
-j50
Page 5
2003. 2. 12 5/5
KTC3770S
Revision No : 1
S
11e
V =10V
CE
I =20mA
C
Ta=25 C
(UNIT : Ω)
j25
j50
j100
S
12e
V =10V
CE
I =20mA
C
Ta=25 C
120
f=0.2GHz
90
20
16
60
j10
0
-j10
_
+
180
10
-j25
S
21e
V =10V
CE
I =20mA
C
Ta=25 C
150
2.0
1.6
1.2
25
0.4
f=0.2GHz
120
50 100 250
-j100
-j50
90
0.25
0.20
0.15
0.10
0.05
0.8
0.4
f=0.2GHz
0
1.2
1.6
60
2.0
j150
-j150
0.200.150.100.05
j250
-j250
30
0.25
150
_
+
180
46810
12
8
0.4
0.8
1.2
2
1.6
2.0
0
2
-150
-120
-60
30
0
-30
-90
S
22e
V =10V
CE
I =20mA
C
Ta=25 C
j50
(UNIT : Ω)
j25
j100
j150
j10
10 25 50 100 250
0
0
-j10
1.6
2.0
1.2
0.8
0.4
f=0.2GHz
j250
-j250
-150
-30
-j25
-120
-90
-60
-j50
-j150
-j100
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