Datasheet ktc3770f Datasheet

2005. 4. 7 1/5

SEMICONDUCTOR

TECHNICAL DATA

KTC3770F

EPITAXIAL PLANAR NPN TRANSISTOR

Revision No : 0

VHF/UHF WIDE BAND AMPLIFIER APPLICATION.

FEATURES

·Low Noise Figure, High Gain.

·

NF=1.1dB, |S

21e

|2=11dB (f=1GHz).

MAXIMUM RATING (Ta=25℃)

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Note 1 : hFEClassification A:50~100, B:80~160, C:125~250.
Note 2 : C

re

is measured by 3 terminal method with capacitance bridge.

CHARACTERISTIC SYMBOL RATING UNIT

Collector-Base Voltage

V

CBO

20 V

Collector-Emitter Voltage

V

CEO

12 V

Emitter-Base Voltage

V

EBO

3 V

Collector Current

I

C

100 mA

Collector Power Dissipation

P

C

50 mW

Junction Temperature

T

j

150

℃

Storage Temperature Range

T

stg

-55～150

℃

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Collector Cut-off Current

I

CBO

VCB=10V, IE=0

- - 1

μA

Emitter Cut-off Current

I

EBO

VEB=1V, IC=0

- - 1

μA

DC Current Gain

h

FE

(Note1) VCE=10V, IC=20mA

50 - 250

Collector Output Capacitance

C

ob

VCB=10V, IE=0, f=1MHz (Note2)

- - 1.0 pF

Reverse Transfer Capacitance

C

re

- 0.65 1.15 pF

Transition Frequency

f

T

VCE=10V, IC=20mA

5 7 - GHz

Insertion Gain

|S

21e

|

2

VCE=10V, IC=20mA, f=1GHz

7.5 11.5 - dB

Noise Figure NF

VCE=10V, IC=7mA, f=1GHz

- 1.1 2 dB

E

B

2

A

G

K

1

C

1. EMITTER

2. BASE

3. COLLECTOR

D

3

J

DIM MILLIMETERS

A

B

C

D

E

G

J

K 0.15 0.05

_

0.6 0.05

+
_

+

0.8 0.05

0.38+0.02/-0.04
_

+

0.2 0.05
_

+

1.0 0.05

_
+

0.35 0.05
_

+

0.1 0.05
_

+

TFSM

Marking

Type Name

h Rank

FE

7

2005. 4. 7 2/5

KTC3770F

Revision No : 0

TYPICAL CHARACTERISTICS (Ta=25 C)

Pc - Ta

300

C

200

100

0

0

COLLECTOR POWER DISSIPATION P (mW)

500

300

FE

100

50 100 150

AMBIENT TEMPERATURE Ta ( C)

h - I

FE

C

V =10V

CE

C , C - V

ob re

5

re

3

ob

1

0.5

0.3

OUTPUT CAPACITANCE C (pF)

0.1

0.1

0.3 0.5 1 3 5 10

REVERSE TRANSFER CAPACITANCE C (pF)

COLLECTOR-BASE VOLTAGE V (V)

2

S - I

2le

C

15

2

2le

10

CB

f=1MHz
Ta=25 C

C

ob

C

re

CB

50

30

DC CURRENT GAIN h

10

COLLECTOR CURRENT I (mA)

f - I

TC

10

V =10V

CE

T

5

3

1

TRANSITION FREQUENCY f (GHz)

1 3 5 10 30 50 100

C

5

V =10V

C

CE

f=1.0GHz

V =10V

CE

I =20mA

C

INSERTION GAIN S (dB)

0

1003010310.5

1

3 5 10 30 50 100

COLLECTOR CURRENT I (mA)

2

S - f

2le

30

2

2le

20

2

S

2le

10

INSERTION GAIN S (dB)

0

0.1

0.3 0.5 1 3

COLLECTOR CURRENT I (mA)

C

FREQUENCY f (GHz)

2005. 4. 7 3/5

KTC3770F

Revision No : 0

f (MHz)

|S11|

∠S

11

|S21|

∠S

21

|S12|

∠S

12

|S22|

∠S

22

200 0.651 -69.3 10.616 129.3 0.051 59.2 0.735 -28.1

400 0.467 -113.3 6.856 104.4 0.071 54.4 0.550 -34.1

600 0.391 -139.3 4.852 90.9 0.086 56.0 0.468 -33.9

800 0.360 -159.2 3.802 81.2 0.101 59.1 0.426 -33.6

1000 0.360 -176.9 3.098 72.9 0.118 61.0 0.397 -35.7

1200 0.361 172.7 2.646 67.3 0.137 63.5 0.373 -38.3

1400 0.381 160.3 2.298 59.3 0.157 63.3 0.360 -43.0

1600 0.398 152.2 2.071 55.2 0.180 64.1 0.337 -45.9

1800 0.423 143.3 1.836 49.0 0.203 63.7 0.320 -52.3

2000 0.445 137.6 1.689 46.2 0.220 64.7 0.302 -52.2

S-PARAMETER
(VCE=10V, IC=5mA, Z

O

=50Ω)

(VCE=10V, IC=20mA, Z

O

=50Ω)

f (MHz)

|S11|

∠S

11

|S21|

∠S

21

|S12|

∠S

12

|S22|

∠S

22

200 0.339 -107.0 16.516 108.7 0.035 66.1 0.459 -36.6

400 0.258 -147.3 8.928 92.1 0.060 71.0 0.343 -32.9

600 0.243 -167.7 6.022 83.0 0.085 71.9 0.305 -29.9

800 0.242 177.0 4.633 76.2 0.109 72.2 0.284 -29.4

1000 0.260 164.5 3.744 69.9 0.136 70.4 0.266 -31.7

1200 0.269 157.6 3.193 65.7 0.160 69.9 0.246 -35.0

1400 0.294 148.7 2.750 58.8 0.187 66.7 0.233 -40.4

1600 0.314 143.1 2.479 55.5 0.212 65.2 0.208 -43.6

1800 0.343 136.5 2.185 50.1 0.238 62.4 0.190 -50.5

2000 0.367 131.4 2.016 47.8 0.254 61.6 0.173 -48.3

2

S - V

2le

5

4

3

2

1

NOISE FIGURE NF (dB)

0

COLLECTOR CURRENT I (mA)

NF - I

C

15

12

2

2le

9

6

3

INSERTION GAIN S (dB)

0

0

246810

COLLECTOR-EMITTER VOLTGE V (V)

C

V =10V

CE

f=1.0GHz

1003010310.5

CE

f=1.0GHz
I =20mA

C

CE

2005. 4. 7 4/5

KTC3770F

Revision No : 0

j10

0

-j10

S

11e

V =10V

CE

I =5mA

C

Ta=25 C

(UNIT : Ω)

j25

2.0

1.6

1.2

10 25 50

0.8

0.4

-j25

S

12e

V =10V

CE

I =5mA

C

j50 90

Ta=25 C

120

j100

f=0.2GHz

j150

150

1.0

j250

100 250

_

+

180

46810

2

-j250

-j150

f=0.2GHz

-150

-j100

-120

-j50

-90

10

8

6

4

0.8

1.2

2

1.6

2.0

0

60

30

0

-30

-60

_

+

180

S

21e

V =10V

CE

I =5mA

C

Ta=25 C

150

-150

120

-120

90

-90

0

0.25

0.20

0.15

0.10

0.05

2.0

1.6

1.2

0.8

0.4

f=0.2GHz

60

-60

S

22e

V =10V

CE

I =5mA

C

Ta=25 C

j50

(UNIT : Ω)

j25

30

j10

10 25 50

0

0

0.25

0.200.150.100.05

0.8

1.6

-j10

2.0

1.2

-30

-j25

j100

100 250

0.4

f=0.2GHz

-j100

j150

j250

-j250

-j150

-j50

2005. 4. 7 5/5

KTC3770F

Revision No : 0

S

11e

V =10V

CE

I =20mA

C

Ta=25 C

(UNIT : Ω)

j25

j50

j100

S

12e

V =10V

CE

I =20mA

C

Ta=25 C

120

f=0.2GHz

90

20

16

60

j10

0

-j10

_

+

180

10

-j25

S

21e

V =10V

CE

I =20mA

C

Ta=25 C

150

2.0

1.6

1.2

25

0.4

f=0.2GHz

120

50 100 250

-j100

-j50

90

0.25

0.20

0.15

0.10

0.05

0.8

0.4

f=0.2GHz

0

1.2

1.6

60

2.0

j150

-j150

0.200.150.100.05

j250

-j250

30

0.25

150

_

+

180

46810

12

8

0.4

0.8

1.2

2

1.6

2.0

0

2

-150

-120

-60

30

0

-30

-90

S

22e

V =10V

CE

I =20mA

C

Ta=25 C

j50

(UNIT : Ω)

j25

j100

j150

j10

10 25 50 100 250

0

0

-j10

1.6

2.0

1.2

0.8

0.4

f=0.2GHz

j250

-j250

-150

-30

-j25

-120

-90

-60

-j50

-j150

-j100