Page 1
2008. 8. 29 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3708U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
High frequency amplifier transistor, RF switching application.
FEATURES
Very low on resistance (RON).
Low capacitance.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
12 V
Collector-Emitter Voltage
V
CEO
6 V
Emitter-Base Voltage
V
EBO
3 V
Collector Current
I
C
50 mA
Collector Power Dissipation
P
C
100 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=10V, IE=0
- - 0.5
A
Emitter Cut-off Current
I
EBO
VEB=2V, IC=0
- - 0.5
A
DC Current Gain
h
FE
VCE=5V, IC=5mA
270 - 560
Collector-Emitter Saturation Voltage
V
CE(sat)
IC=10mA, IB=1mA
- - 0.3 V
Transition Frequency
f
T
VCE=5V, IE=-10mA, f=200MHz
300 800 - MHz
Collector Output Capacitance
C
ob
VCB=10V, IE=0A, f=1MHz
- 1 1.7 pF
On Resistance
R
on
IB=3mA, VI=100mVrms, f=500kHz
- 2 -
E
B
MM
A
J
G
C
L
2
1
N
K
1. EMITTER
2. BASE
3. COLLECTOR
DIM MILLIMETERS
A
D
B
H
C
D
E
G
H
J
K
L
M0.42 0.10
N0.10 MIN
3
N
_
2.00 0.20
+
_
+
1.25 0.15
_
0.90 0.10
+
0.3+0.10/-0.05
_
+
2.10 0.20
0.65
0.15+0.1/-0.06
1.30
0.00-0.10
0.70
_
+
USM
Marking
Type Name
EA
Lot No.
Page 2
2008. 8. 29 2/3
KTC3708U
Revision No : 1
10
Ta=25℃
(mA)
8
C
6
4
2
COLLECTOR CURRENT I
0
012 3 45
COLLECTOR-EMITTER VOLTGE V (V)
(mA)
C
50
40
125℃
25℃
IC -V
IC -V
-
25℃
CE
BE
35mA
30mA
25mA
20mA
15mA
10mA
5mA
CE
V
I
CE
B
=0µA
=5V
50
Ta=25℃
(mA)
40
C
1.0mA
30
20
10
COLLECTOR CURRENT I
0
00.10.2 0.3 0.4 0.5
COLLECTOR-EMITTER VOLTGE V (V)
1000
Ta=25℃
V
=5V
CE
500
FE
IC -V
0.5mA
0.4m
hFE - I
CE
0.3mA
A
0.2mA
0.1mA
IB=0mA
CE
C
30
20
10
COLLECTOR CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
BASE-EMITTER VOLTGE V (V)
1000
Ta=25℃
I
=10
C/IE
500
200
(V)
100
CE(sat)
V
50
20
V
CE(set)
- I
200
100
50
DC CURRENT GAIN h
20
10
0.1
0.2 0.5 1
BE
COLLECTOR CURRENT I (mA)
C
2000
Ta=25℃
=5V
V
1000
CE
(MHz)
T
2510
C
fT - IC
20 50
500
200
100
50
10
COLLECTOR-EMITTER SATURATION
0.1
0.2 0.5 1C2510
20 50
COLLECTOR CURRENT I (mA)
20
TRANSITION FREQUENCY f
0.1
0.2 0.5 1C2510
COLLECTOR CURRENT I (mA)
20 50
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2008. 8. 29 3/3
KTC3708U
Revision No : 1
Cre - V
CB
(pF)
re
20
10
2
1
0.5
0.2
0.150.2 0.5 1 2510
REVERSE TRANSFER CAPACITANCE C
COLLECTOR-BASE VOLTAGE VCB (V)
RON - I
B
50
(Ω)
ON
10
Ta=25℃
f=1MHz
20 50
Ta=25℃
f=500kHz
=100mV
V
I
RL=1kΩ
rms
Cob- V
20
(pF)
10
ob
2
1
0.5
OUTPUT CAPACITANCE C
0.2
0.150.2 0.5 1 2510
COLLECTOR-BASE VOLTAGE VCB (V)
CB
Ta=25℃
f=1MHz
20 50
5
2
ON RESISTANCE R
1
0.1200.2 0.5 1 2510
20 50
BASE CURRENT IB (mA)
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