Page 1
2007. 7. 3 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3660U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
VHF/UHF BAND LOW NOISE AMPLIFIER APPLICATIONS.
FEATURES
·Low Noise Figure, High Gain.
·NF=1.4dB (f=2GHz), |S
21e
|2=13.5dB (f=2GHz).
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Note 1 : Cre is measured by 3 terminal method with capacitance bridge.
Note 2 : This device electrostatic sensitivity. Please handle with caution.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
8V
Collector-Emitter Voltage
V
CEO
4.5 V
Emitter-Base Voltage
V
EBO
1.5 V
Collector Current
I
C
15 mA
Base Current
I
B
7.5 mA
Collector Power Dissipation
P
C
67.5 mW
Junction Temperature
T
j
125
℃
Storage Temperature Range
T
stg
-55～125
℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=8V, IE=0
--1
μA
Emitter Cut-off Current
I
EBO
VEB=1V, IC=0
--1
μA
DC Current Gain
h
FE
VCE=3V, IC=10mA
50 - 150 -
Output Capacitance
C
ob
VCB=3V, IE=0, f=1MHz (Note1)
- 0.4 0.65 pF
Reverse Transfer Capacitance
C
re
- 0.2 0.45 pF
Transition Frequency
f
T
VCE=3V, IC=10mA
13 16 - GHz
Insertion Gain
|S
21e
|2(1) VCE=3V, IC=10mA, f=1GHz
16.5 19 21.5
dB
|S
21e
|2(2) VCE=3V, IC=10mA, f=2GHz
11.5 13.5 16.5
Noise Figure
NF (1)
V
CE
=3V, IC=3mA, f=1GHz
- 1.0 1.4
dB
NF (2)
V
CE
=3V, IC=3mA, f=2GHz
- 1.4 1.8
TENTATIVE
E
J
A
M
1
2
C
L
N
1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
M
B
DIM MILLIMETERS
D
4
A
B
C
3
D
E
H
J
K
H
L
N
K
M
N
_
2.00 0.20+
_
1.25 0.15+
_
0.90 0.10+
0.3+0.10/-0.05
_
2.10 0.20+
0.15+0.1/-0.06
1.30
0.00 ~ 0.10
0.70
0.42
0.10 MIN
USQ
Marking
43
Type Name
RA
21
Page 2
2007. 7. 3 2/3
KTC3660U
Revision No : 0
Cob, Cre - V
(pF)
re
1
(pF)
ob
0.5
0.3
0.1
OUTPUT CAPACITANCE C
REVERSE TRANSFER CAPACITANCE C
COLLECTOR-BASE VOLTAGE VCB (V)
0.3 1 3
S
2le
2
- I
CB
C
ob
C
re
C
25
2
20
2le
S
15
V
V
CE
CE
=1V
=3V
f=1MHz
Ta=25 C
f=1GHz
Ta=25 C
fT - I
C
25
(GHz)
T
20
V
Ta=25 C
=3V
CE
15
V
=1V
CE
10
5
0
1050.50.1
TRANSITION FREQUENCY f
31030
1001
COLLECTOR CURRENT IC (mA)
2
S
- I
2le
C
25
2
20
2le
S
15
V
f=2GHz
Ta=25 C
=3V
CE
10
5
INSERTION CAIN (dB)
0
31030
COLLECTOR CURRENT IC (mA)
S
30
2
2le
S
20
10
INSERTION CAIN (dB)
0
300 1000 3000
2le
2
- f
I
=3mA
C
I
=10mA
C
VCE=1V
Ta=25 C
10
V
=1V
CE
5
INSERTION CAIN (dB)
1001
0
31030
1001
COLLECTOR CURRENT IC (mA)
2
S
- f
2le
30
2
2le
S
20
10
I
C
=3mA
I
C
VCE=3V
Ta=25 C
=10mA
INSERTION CAIN (dB)
10000100
0
300 1000 3000
10000100
FREQUENCY f (MHz)
FREQUENCY f (MHz)
Page 3
2007. 7. 3 3/3
KTC3660U
Revision No : 0
3
2
1
NOISE FIGURE NF (dB)
0
31030
COLLECTOR CURRENT IC (mA)
3
2
NF - I
NF - I
C
3
VCE=1V
f=1GHz
Ta=25 C
2
1
NF - I
C
VCE=3V
f=1GHz
Ta=25 C
NOISE FIGURE NF (dB)
1001
0
31030
1001
COLLECTOR CURRENT IC (mA)
C
VCE=1V
f=2GHz
Ta=25 C
3
2
NF - I
C
VCE=3V
f=2GHz
Ta=25 C
1
NOISE FIGURE NF (dB)
0
31030
COLLECTOR CURRENT IC (mA)
1
NOISE FIGURE NF (dB)
1001
0
31030
1001
COLLECTOR CURRENT IC (mA)
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