
2008. 9. 23 1/5
SEMICONDUCTOR
TECHNICAL DATA
KTC3605U
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure, High Gain.
NF=1.1dB, |S
21e
|2=13dB (f=1GHz).
Two internal isolated Transistors in one package.
MAXIMUM RATING (Ta=25 )
1. Q1 Base
2. Q1 Emitter
3. Q2 Collector
4. Q2 Base
5. Q2 Emitter
6. Q1 Collector
DIM MILLIMETERS
A
B
D
G
US6
2.00 0.20
1.25 0.1
2.1 0.1
0.2+0.10/-0.05
0-0.1
0.9 0.1
0.65
0.15+0.1/-0.05
B1
H
C
T
G
1
3
2
B
B1
D
A
H
T
6
4
C
C
A1
1.3 0.1A1
5
+
_
+
_
+
_
+
_
+
_
Note 1 : hFEClassification H:50~100, J:80~160, K:125~250
Note 2 : C
re
is measured by 3 terminal method with capacitance bridge.
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
20 V
Collector-Emitter Voltage
V
CEO
10 V
Emitter-Base Voltage
V
EBO
1.5 V
Collector Current
I
C
40 mA
Collector Power Dissipation
PC*
200 mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=10V, IE=0
- - 1
A
Emitter Cut-off Current
I
EBO
VEB=1V, IC=0
- - 1
A
DC Current Gain
h
FE
(Note1) VCE=8V, IC=20mA
50 - 250 -
Collector Output Capacitance
C
ob
VCB=10V, IE=0, f=1MHz (Note2)
- 0.7 - pF
Reverse Transfer Capacitance
C
re
- 0.5 0.95 pF
Transition Frequency
f
T
VCE=8V, IC=20mA
7 10 - GHz
Insertion Gain
|S
21e
|2(1) VCE=8V, IC=20mA, f=1GHz
10 13 - dB
|S
21e
|2(2) VCE=8V, IC=20mA, f=2GHz
- 7 - dB
Noise Figure
NF (1)
VCE=8V, IC=5mA, f=1GHz
- 1.1 2.5 dB
NF (2)
VCE=8V, IC=5mA, f=2GHz
- 1.7 - dB
EQUIVALENT CIRCUIT (Top View)
654
456
Lot No.
Q2
Q1
321
Type Name
RH
123

2008. 9. 23 2/5
KTC3605U
Revision No : 1
TYPICAL CHARACTERISTICS (Ta=25 C)
300
200
FE
100
70
50
30
DC CURRENT GAIN h
V
=8V
CE
Ta=25 C
10
257 50
COLLECTOR CURRENT I (mA)
12
10
T
8
h - I
f - I
C
FE
TC
C
C , C - V
ob re
5
re
3
ob
1
0.5
CB
f=1MHz
Ta=25 C
C
ob
C
re
0.3
OUTPUT CAPACITANCE C (pF)
30201031
0.1
0.1
REVERSE TRANSFER CAPACITANCE C (pF)
0.3 0.5 1 3 5 10
COLLECTOR-BASE VOLTAGE V (V)
2
S - I
2le
C
CB
12
10
2
2le
8
6
4
2
0
TRANSITION FREQUENCY f (GHz)
1351030
COLLECTOR CURRENT I (mA)
2
S - f
2le
30
25
2
2le
20
15
10
VCE=8V
5
I
=20mA
INSERTION GAIN S (dB)
C
Ta=25 C
0
0.1 0.2 0.3 0.7 3
0.5
6
4
VCE=8V
Ta=25 C
7
C
2
INSERTION GAIN S (dB)
0
1351030
7
COLLECTOR CURRENT I (mA)
NF - I
C
5
VCE=8V
f=2GHz
Ta=25 C
C
VCE=8V
Ta=25 C
4
3
f=2GHz
2
1
NOISE FIGURE NF (dB)
f=1GHz
0
21
20732
50301051
FREQUENCY f (GHz)
COLLECTOR CURRENT I (mA)
C

2008. 9. 23 3/5
KTC3605U
Revision No : 1
Frequency
|S11| |S21| |S12| |S22|
(MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.
200 0.683 -50.1 10.186 138.3 0.049 62.0 0.773 -30.0
400 0.462 -86.9 7.472 114.6 0.071 54.3 0.556 -39.6
600 0.343 -113.1 5.618 100.9 0.086 53.8 0.448 -41.7
800 0.282 -133.6 4.407 91.7 0.101 55.3 0.392 -41.6
1000 0.249 -151.0 3.663 84.7 0.115 57.2 0.360 -41.7
1200 0.236 -166.6 3.128 78.7 0.131 58.9 0.339 -41.7
1400 0.233 179.7 2.759 73.1 0.150 60.1 0.330 -42.8
1600 0.234 168.3 2.457 68.2 0.168 60.0 0.319 -45.0
1800 0.238 158.6 2.224 63.4 0.185 60.0 0.311 -47.9
2000 0.251 149.6 2.038 59.4 0.203 60.4 0.302 -50.2
S-PARAMETER
(VCE=8V, IC=5mA, ZO=50 , Ta=25 )
(VCE=8V, IC=20mA, ZO=50 , Ta=25 )
Frequency
|S11| |S21| |S12| |S22|
(MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.
200 0.319 -91.9 18.338 116.7 0.033 65.3 0.494 -43.5
400 0.213 -134.2 10.303 99.2 0.054 68.9 0.312 -42.4
600 0.185 -160.0 7.111 90.3 0.076 70.8 0.258 -37.6
800 0.176 -178.2 5.415 84.3 0.098 71.2 0.236 -34.3
1000 0.174 167.8 4.400 79.2 0.120 71.1 0.228 -32.0
1200 0.178 156.8 3.712 74.8 0.143 70.3 0.226 -31.5
1400 0.186 147.5 3.236 70.3 0.168 68.7 0.226 -32.8
1600 0.194 139.7 2.874 66.3 0.190 66.6 0.223 -35.9
1800 0.199 133.7 2.583 62.6 0.211 64.9 0.216 -39.0
2000 0.215 127.8 2.369 58.8 0.232 63.5 0.211 -41.9
S - V
10
8
2
2le
6
4
2
INSERTION GAIN S (dB)
0
0
246810
COLLECTOR-EMITTER VOLTGE V (V)
2le
2
CE
300
C
200
100
I
=20mA
C
f=2GHz
Ta=25 C
0
0
COLLECTOR POWER DISSIPATION P (mW)
CE
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
50 100 150