Page 1
2010. 6. 4 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3572
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
FEATURE
Low Collector-Emitter Saturation Voltage V
CE(sat)
.
High Collector Current Capability : ICand ICP.
Higher Efficiency Leading to Less Heat Generation.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
G
H
K
L
P
TO-92L
7.20 MAX
5.20 MAX
2.50 MAX
0.60 MAX
1.27
1.70 MAX
0.55 MAX
14.00 0.50
0.35 MIN
0.75 0.10
4
F
J
M
O
Q
25
1.25
Φ1.50
0.10 MAX
DEPTH:0.2
123
B
A
C
Q
K
FF
M
M
NN
O
H
L
J
D
C
N
G
P
HH
E
D
H
R
S
12.50 0.50R
1.00S
1.15 MAX
+
_
+
_
+
_
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
120 V
Collector-Emitter Voltage
V
CEO
100 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
DC
I
C
1
A
Pulse
I
CP
3
Base Current
I
B
300 mA
Collector Power Dissipation
P
C
1 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=100 A
120 - - V
Collector-Emitter Breakdown Voltage **
V
(BR)CEO
IC=1mA
100 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=100 A
5 - - V
Collector Cut-Off Current
I
CBO
VCB=80V
- - 100 nA
Emitter Cut-Off Current
I
EBO
VEB=4V, IC=0A
- - 100 nA
Collector-Emitter Cut-Off Current
I
CES
V
CES
=80V, VBE=0V
- - 100 nA
Collector-Emitter Saturation Voltage **
V
CE(sat)
(1) IC=100mA, IB=10mA
- - 0.04
V
V
CE(sat)
(2) IC=500mA, IB=50mA
- - 0.12
V
CE(sat)
(3) IC=1A, IB=100mA
- - 0.2
Base-Emitter Saturation Voltage **
V
BE(sat)
IC=1A, IB=100mA
- - 1.05 V
Base-Emitter Voltag
V
BE
VCE=10V, IC=1A
- - 0.9 V
DC Current Gain **
hFE(1) VCE=10V, IC=1mA
150 - -
hFE(2) VCE=10V, IC=250mA
150 - 500
hFE(3) VCE=10V, IC=500mA
100 - -
hFE(4) VCE=10V, IC=1A
80 - -
Transition Frequency
f
T
VCE=10V, IC=50mA, f=100MHz
100 - - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 9.5 - pF
** Pulse Width = 300 S, Duty Cycle 2%.
Page 2
2010. 6. 4 2/3
KTC3572
Revision No : 0
V - I
CE(sat) C
1
IC/IB=10
CE(sat)
-1
10
VOLTAGE V (V)
-2
10
COLLECTOR-EMITTER SATURATION
-1
110
10 10
COLLECTOR CURRENT I (mA)
V - I
1.2
VCE=10V
BE
0.8
VOLTAGE V (V)
Ta=-55 C
Ta=25 C
Ta=100 C
2
10
CBE
Ta=-55 C
10
C
Ta=25 C
3
V - I
CE(sat) C
10
IC/IB=50
Ta=25 C
1
CE(sat)
-1
10
VOLTAGE V (V)
-2
10
4
COLLECTOR-EMITTER SATURATION
FE
600
400
-1
110
10 10
COLLECTOR CURRENT I (mA)
h - I
FE C
VCE=10V
Ta=100 C
Ta=25 C
2
10
3
10
C
4
0.4
Ta=100 C
BASE-EMITTER
0
-1
-1-10
-10 -10
COLLECTOR CURRENT I (mA)
V - I
10
IC/IB=20
Ta=25 C
BE(sat)
1
VOLTAGE V (V)
BASE-EMITTER SATURATION
-1
10
-1
110
2
-10
BE(sat)
10 10
C
2
10
3
-10
C
3
10
200
DC CURRENT GAIN h
(A)
C
1.6
0
2
-1
Ta=25 C
I
B
4
1.2
0.8
Ta=-55 C
-1-10
-10 -10
-10
COLLECTOR CURRENT I (mA)
I - V
CE
C
I
B
I
=1750µA
B
=2450µA
I
=2800µA
B
I
B
I
=2100µA
B
=3150µA
2
C
=3500µA
-10
I
I
3
=1400µA
B
=1050µA
B
I
=700µA
B
I
=350µA
B
4
0.4
COLLECTOR CURRENT I
4
0
103
254
COLLECTOR CURRENT I (mA)
C
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Page 3
2010. 6. 4 3/3
KTC3572
Revision No : 0
SAFE OPERATING AREA
10
IC MAX(PULSE)*
C
IC MAX(CONTINUOUS)
1
DC OPERATION(Ta=25 C)
0.1
0.01
*SINGLE NONREPETTTTVE PULSE Ta=25 C
COLLECTOR CURRENT I (mA)
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN TEMPERATURE
0.001
0.1
110
100mS
10mS*
1mS*
100 1000
COLLECTOR-EMITTER VOLTAGE V (V)
CE
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