Page 1
2011. 2. 18 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3571S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 5
FEATURE
·Low Collector-Emitter Saturation Voltage V
CE(sat)
.
·High Collector Current Capability : I
C
and ICP.
·Higher Efficiency Leading to Less Heat Generation.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
130 V
Collector-Emitter Voltage
V
CEO
100 V
Emitter-Base Voltage
V
EBO
5 V
Collector Current
DC
I
C
1
A
Pulse
I
CP
3
Base Current
I
B
300 mA
Collector Power Dissipation**
P
C
350 mW
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
Note : * Package Mounted on 99.5% Alumina 10×8×0.6mm.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=100μA
130 - - V
Collector-Emitter Breakdown Voltage **
V
(BR)CEO
IC=1mA
100 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=100μA
5 - - V
Collector Cut-Off Current
I
CBO
VCB=80V
- - 100 nA
Emitter Cut-Off Current
I
EBO
VEB=4V, IC=0A
- - 100 nA
Collector-Emitter Cut-Off Current
I
CES
V
CES
=80V, VBE=0V
- - 100 nA
Collector-Emitter Saturation Voltage **
V
CE(sat)
(1) IC=100mA, IB=10mA
- - 0.04
V
V
CE(sat)
(2) IC=500mA, IB=50mA
- - 0.12
V
CE(sat)
(3) IC=1A, IB=100mA
- - 0.2
Base-Emitter Saturation Voltage **
V
BE(sat)
IC=1A, IB=100mA
- - 1.05 V
Base-Emitter Voltag
V
BE
VCE=10V, IC=1A
- - 0.9 V
DC Current Gain **
hFE(1) VCE=10V, IC=1mA
150 - -
hFE(2) VCE=10V, IC=250mA
150 - 500
hFE(3) VCE=10V, IC=500mA
100 - -
hFE(4) VCE=10V, IC=1A
80 - -
Transition Frequency
f
T
VCE=10V, IC=50mA, f=100MHz
100 - - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 9.5 - pF
** Pulse Width = 300μS, Duty Cycle≤2%.
MARKING
E
B
LL
DIM MILLIMETERS
A
B
C
D
3
M
D
E
G 1.90
H
J
K
L
M
N
P7
J
Q 0.1 MAX
H
N
C
2
1
PP
K
A
G
Q
_
+
2.93 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
Type Name
KMB
Lot No.
Page 2
2011. 2. 18 2/3
KTC3571S
Revision No : 5
V - I
CE(sat) C
1
IC/IB=10
CE(sat)
-1
10
VOLTAGE V (V)
-2
10
COLLECTOR-EMITTER SATURATION
-1
110
10 10
COLLECTOR CURRENT I (mA)
V - I
1.2
VCE=10V
BE
0.8
VOLTAGE V (V)
Ta=-55 C
Ta=25 C
2
10
CBE
Ta=100 C
Ta=-55 C
C
Ta=25 C
3
10
V - I
CE(sat) C
10
IC/IB=50
Ta=25 C
1
CE(sat)
-1
10
VOLTAGE V (V)
-2
10
4
COLLECTOR-EMITTER SATURATION
FE
600
400
-1
110
10 10
COLLECTOR CURRENT I (mA)
h - I
FE C
VCE=10V
Ta=100 C
Ta=25 C
2
10
3
10
C
4
0.4
Ta=100 C
BASE-EMITTER
0
-1
110
COLLECTOR CURRENT I (mA)
V - I
10
IC/IB=20
Ta=25 C
BE(sat)
1
VOLTAGE V (V)
BASE-EMITTER SATURATION
-1
10
-1
110
10 10
BE(sat)
10 10
2
10
C
2
10
3
10
C
3
10
200
DC CURRENT GAIN h
(A)
C
0
2
1.6
-1
Ta=25 C
IB=2450µA
4
1.2
0.8
Ta=-55 C
110
10 10
2
10
COLLECTOR CURRENT I (mA)
I - V
CE
C
IB=3150µA
IB=2800µA
IB=2100µA
IB=3500µA
IB=1750µA
C
3
10
IB=1400µA
IB=1050µA
IB=700µA
IB=350µA
4
0.4
COLLECTOR CURRENT I
4
0
103
254
COLLECTOR CURRENT I (mA)
C
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
Page 3
2011. 2. 18 3/3
KTC3571S
Revision No : 5
SAFE OPERATING AREA
10000
IC MAX(PULSE)*
C
1000
IC MAX(CONTINUOUS)
100
10
*SINGLE NONREPETTTTVE PULSE Ta=25 C
COLLECTOR CURRENT I (mA)
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN TEMPERATURE
1
0.1
100mS
DC OPERATION(Ta=25 C)
110
10mS*
1mS*
100 1000
COLLECTOR-EMITTER VOLTAGE V (V)
CE
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