Page 1
2001. 6. 28 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3552T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
FEATURES
·Adoption of FBET, MBIT Processes.
·
High Current Capacitance.
·
Low Collector-to-Emitter Saturation Voltage.
·
High-Speed Switching.
·
Ultrasmall Package Facilitates Miniaturization in end Products.
·
High Allowable Power Dissipation.
·
Complementary to KTA1552T.
MAXIMUM RATING (Ta=25℃)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
80 V
Collector-Emitter Voltage
V
CES
80
V
V
CEO
50
Emitter-Base Voltage
V
EBO
6 V
Collector Current
DC
I
C
3
A
Pulse
I
CP
6
Base Current
I
B
600 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
℃
Storage Temperature Range
T
stg
-55～150
℃
* Package mounted on a ceramic board (600㎟×0.8㎜)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=40V, IE=0
- - 0.1
μA
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
μA
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10μA, I
E
=0
80 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CES
I
C
=100μA, V
BE
=0
80 - - V
V
(BR)CEOIC
=1mA, IB=0
50 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10μA, I
C
=0
6 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)1
IC=1A, IB=50mA
- 80 120 mV
V
CE(sat)2
IC=2A, IB=100mA
- 140 210 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=2A, IB=100mA
- 0.88 1.2 V
DC Current Gain
h
FE
VCE=2V, IC=100mA
200 - 560
Transition Frequency
f
T
VCE=10V, IC=500mA
- 380 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 13 - pF
Switching
Time
Turn-On Time
t
on
- 35 -
nS
Storage Time
t
stg
- 300 -
Fall Time
t
f
- 22 -
E
B
A
F
C
K
G
G
L
J
1. EMITTER
2. BASE
3. COLLECTOR
2
1
3
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
0.4 0.1
+
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
TSM
Marking
Lot No.
Type Name
H L
INPUT
PW=20µs
DC 1%
50Ω
I
<
=
B2
R
V
R
100µF
V =-5V
BE
10I =-10I =I =1A
B1
I
B1
B
470µF
V =25V
C
B2
OUTPUT
R
L
CC
Page 2
2001. 6. 28 2/3
KTC3552T
Revision No : 0
I - V
5.0
4.5
4.0
C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
COLLECTOR CURRENT I (A)
1K
500
300
0
0
0.4 0.8 1.2 1.6 2.0
COLLECTOR-EMITTER VOLTAGE V (V)
V - I
CE(sat) C
C
100mA
CE
80mA
60mA
40mA
20mA
10mA
5.0mA
I =0mA
B
CE
I /I =20
CB
1K
500
FE
300
100
50
30
DC CURRENT GAIN h
V =2V
CE
10
0.01 0.03 0.1 1
1K
I /I =50
CB
500
300
h - I
C
FE
Ta=75 C
Ta=25 C
COLLECTOR CURRENT I (A)
V - I
CE(sat) C
Ta=-25 C
C
30.3
CE(sat)
100
50
30
VOLTAGE V (mV)
10
COLLECTOR-EMITTER SATURATION
Ta=75 C
Ta=25 C
0.01 0.03 0.1 1
COLLECTOR CURRENT I (A)
V - I
BE(sat) C
1K
500
300
BE(sat)
100
50
30
VOLTAGE V (mV)
Ta=-25 C
Ta=25 C
BASE-EMITTER SATURATION
10
0.01 0.03 0.1 1
COLLECTOR CURRENT I (A)
Ta=-25 C
Ta=75 C
CE(sat)
100
50
30
VOLTAGE V (mV)
10
30.3
COLLECTOR-EMITTER SATURATION
C
I /I =50
CB
0.01 0.03 0.1 1 30.3
COLLECTOR CURRENT I (A)
3.2
V =2V
2.8
C
2.4
CE
Ta=75 C
Ta=25 C
I - V
C
Ta=-25 C
C
BE
2.0
1.6
1.2
Ta=75 C
Ta=25 C
0.8
0.4
COLLECTOR CURRENT I (A)
30.3
0
C
0.2 0.4 0.6 0.8 1.0 1.2
0
BASE-EMITTER VOLTAGE V (V)
Ta=-25 C
BE
Page 3
2001. 6. 28 3/3
KTC3552T
Revision No : 0
C - V
ob
f - I
TC
1K
V =10V
CE
500
T
300
100
50
30
CB
100
50
30
10
TRANSITION FREQUENCY f (MHz)
0.01 0.03 0.1 1 30.3
COLLECTOR CURRENT I (A)
SAFE OPERATING AREA
10
I MAX.(PULSED)
C
5
3
I MAX
C
1
(CONTIN-
UOUS)
DC OPERATION
C
0.5
0.3
0.1
SINGLE NONREPETITIVE
*
0.05
0.03
COLLECTOR CURRENT I (A)
0.01
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
2
(600mm `0.8mm)
0.1 0.3 1 3 10 30 100
1mS*
100m
S*
C
10mS*
500µS*
100µS*
10
ob
C (pF)
5
3
1
COLLECTOR OUTPUT CAPACITANCE
0.1 0.3 1 3 10 300.5 5 50
COLLECTOR-BASE VOLTAGE V (V)
Pc - Ta
1.0
0.8
0.6
C
P (W)
0.4
0.2
COLLECTOR POWER DISSIPATION
0
20 40 60 80 100 120
0
AMBIENT TEMPERATURE Ta ( C)
f=1MHz
CB
MOUNTED ON A
CERAMIC BOARD
2
(600mm `0.8mm)
140 160
COLLECTOR-EMITTER VOLTAGE V (V)
CE
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