Page 1
2001. 6. 28 1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3551T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS APPLICATION.
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dis sipation.
Complementary to KTA1551T.
MAXIMUM RATING (Ta=25 )
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage
V
CBO
80 V
Collector-Emitter Voltage
V
CES
80
V
V
CEO
50
Emitter-Base Voltage
V
EBO
5 V
Collector Current
DC
I
C
1.0
A
Pulse
I
CP
3
Base Current
I
B
200 mA
Collector Power Dissipation
PC *
0.9 W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600 0.8 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current
I
CBO
VCB=40V, IE=0
- - 0.1
A
Emitter Cut-off Current
I
EBO
VEB=4V, IC=0
- - 0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
IC=10 A, IE=0
80 - - V
Collector-Emitter Breakdown Voltage
V
(BR)CES
IC=100 A, VBE=0
80 - - V
V
(BR)CEOIC
=1mA, IB=0
50 - - V
Emitter-Base Breakdown Voltage
V
(BR)EBO
IE=10 A, IC=0
5 - - V
Collector-Emitter Saturation Voltage
V
CE(sat)1
IC=500mA, IB=10mA
- 130 190 mV
V
CE(sat)2
IC=300mA, IB=6mA
- 90 135 mV
Base-Emitter Saturation Voltage
V
BE(sat)
IC=500mA, IB=10mA
- 0.81 1.2 V
DC Current Gain
h
FE
VCE=2V, IC=100mA
200 - 560
Transition Frequency
f
T
VCE=10V, IC=300mA
- 420 - MHz
Collector Output Capacitance
C
ob
VCB=10V, f=1MHz
- 6 - pF
Switching
Time
Turn-On Time
t
on
- 35 -
nS
Storage Time
t
stg
- 330 -
Fall Time
t
f
- 40 -
E
B
A
F
C
K
G
G
L
J
1. EMITTER
2. BASE
3. COLLECTOR
2
1
3
I
D
H
J
DIM MILLIMETERS
A
B
C
D
E
F
G
H
I
J
K 0.60
L 0.55
_
2.9 0.2
+
1.6+0.2/-0.1
_
0.70 0.05
+
_
0.4 0.1
+
2.8+0.2/-0.3
_
1.9 0.2
+
0.95
_
0.16 0.05
+
0.00-0.10
0.25+0.25/-0.15
TSM
Marking
Lot No.
Type Name
H K
INPUT
PW=20µs
DC 1%
50Ω
I
<
=
B2
R
V
R
100µF
V =-5V
BE
20I =-20I =I =500mA
B1
I
B1
B
470µF
V =25V
C
B2
OUTPUT
R
L
CC
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2001. 6. 28 2/3
KTC3551T
Revision No : 0
I - V
1K
800
C
600
400
200
COLLECTOR CURRENT I (A)
0
0
COLLECTOR-EMITTER VOLTAGE V (V)
1
I /I =20
CB
0.5
0.3
30mA
40mA
50mA
20mA
0.2 0.4 0.6 0.8 1.0
V - I
CE(sat) C
h - I
CE
C
FE
1K
500
300
100
10mA
8mA
6mA
4mA
2mA
FE C
Ta=75 C
Ta=25 C
Ta=-25 C
50
30
DC CURRENT GAIN h
V =2V
I =0mA
B
10
CE
0.1 0.30.030.01 1.0
CE
1
COLLECTOR CURRENT I (A)
V - I
CE(sat) C
I /I =50
CB
C
0.5
0.3
CE(sat)
0.1
0.05
0.03
VOLTAGE V (V)
0.01
COLLECTOR-EMITTER SATURATION
Ta=75 C
Ta=25 C
0.1 0.30.030.01
COLLECTOR CURRENT I (A)
V - I
BE(sat) C
10
I /I =50
CB
5
3
BE(sat)
1
0.5
0.3
VOLTAGE V (V)
Ta=-25 C
Ta=25 C
BASE-EMITTER SATURATION
0.1
0.1 0.30.030.01
COLLECTOR CURRENT I (A)
a=75 C
T
Ta=-25 C
C
C
CE(sat)
0.1
0.05
0.03
Ta=75 C
Ta=25 C
a=-25 C
T
VOLTAGE V (V)
0.01
1
COLLECTOR-EMITTER SATURATION
0.1 0.30.030.01
COLLECTOR CURRENT I (A)
I - V
C
BE
1.0
V =2V
0.9
0.8
C
CE
1
C
0.7
0.6
0.5
0.4
0.3
Ta=75 C
Ta=25 C
Ta=-25 C
0.2
0.1
COLLECTOR CURRENT I (A)
0
0
0.2
0.4
1
BASE-EMITTER VOLTAGE V (V)
0.6 0.8 1.0 1.2
BE
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2001. 6. 28 3/3
KTC3551T
Revision No : 0
C - V
ob
f - I
TC
5K
V =10V
CE
3K
T
100
50
30
1K
CB
f=1MHz
500
300
100
50
TRANSITION FREQUENCY f (MHz)
0.01 0.03 0.1 1
COLLECTOR CURRENT I (A)
SAFE OPERATING AREA
5
I MAX.(PULSED)
C
3
1
C
COLLECTOR CURRENT I (A)
I MAX
C
(CONTINUOUS)
0.5
DC OPERATION
0.3
0.1
0.05
0.03
0.01
SINGLE NONREPETITIVE
*
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
MOUNTED ON A CERAMIC BOARD
2
(600mm `0.8mm)
0.1 0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE V (V)
100mS*
1mS*
10mS*
0.3
C
500µS*
100µS*
CE
10
ob
C (pF)
5
3
1
COLLECTOR OUTPUT CAPACITANCE
0.1 0.3
1 3 10 30 100
COLLECTOR-BASE VOLTAGE V (V)
Pc - Ta
1.2
1.0
0.8
0.6
C
P (W)
0.4
0.2
COLLECTOR POWER DISSIPATION
0
20 40 60 80 100 120
0
AMBIENT TEMPERATURE Ta ( C)
CB
MOUNTED ON A
CERAMIC BOARD
2
(600mm `0.8mm)
140 160
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